| Patent application number | Description | Published |
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| 20080203550 | Component, Power Component, Apparatus, Method Of Manufacturing A Component, And Method Of Manufacturing A Power Semiconductor Component - A component has a device applied to a device carrier, a first conducting layer grown onto the device and onto the device carrier, and an insulating material applied to the first conducting layer such that only a portion of the first conducting layer is covered. | 08-28-2008 |
| 20080220564 | Semiconductor module - A semiconductor module is disclosed. One embodiment provides a first semiconductor chip, a second semiconductor chip and a spacer. The first semiconductor chip has a depression at a first main surface. The spacer is applied to the first main surface and at least partly fills the depression. The second semiconductor chip is applied to the spacer. | 09-11-2008 |
| 20080220567 | Semiconductor Component and Production Method - A semiconductor component is disclosed. In one embodiment, the semiconductor component includes a semiconductor chip, which is arranged on a substrate, and a housing, which at least partially surrounds the semiconductor chip. The substrate is at least partly provided with a layer of polymer foam. | 09-11-2008 |
| 20080224301 | Lead Structure for a Semiconductor Component and Method for Producing the Same - A lead structure for a semiconductor component includes: external leads for external connections outside a plastic housing composition, internal leads for electrical connections within the plastic housing composition, and a chip mounting island composed of the lead material. While leaving free contact pads of the internal leads, the top sides of the chip mounting island and the internal leads are equipped with nanotubes as an anchoring layer. The plastic housing composition is arranged in the interspaces between the nanotubes arranged on the internal leads, while an adhesive composition for the semiconductor chip is arranged in the interspaces between the nanotubes arranged on the chip mounting island. The adhesive composition and the plastic housing composition fill the interspaces in a manner free of voids. | 09-18-2008 |
| 20080246137 | INTEGRATED CIRCUIT DEVICE AND METHOD FOR THE PRODUCTION THEREOF - An integrated circuit device includes a semiconductor chip and a control chip at different supply potentials. A lead chip island includes an electrically conductive partial region and an insulation layer. The semiconductor chip is arranged on the electrically conductive partial region of the lead chip island and the control chip is cohesively fixed on the insulation layer. | 10-09-2008 |
| 20080251904 | CURING LAYERS OF A SEMICONDUCTOR PRODUCT USING ELECTROMAGNETIC FIELDS - A semiconductor product including a substrate, a semiconductor chip fitted to the substrate, and a layer, which contains coated particles, located adjacent to the semiconductor chip, wherein the coated particles have a ferromagnetic, ferrimagnetic or paramagnetic core and a coating. | 10-16-2008 |
| 20080258277 | Semiconductor Device Comprising a Semiconductor Chip Stack and Method for Producing the Same - A semiconductor device includes a semiconductor chip stack having at least one lower semiconductor chip as a base of the semiconductor chip stack, and at least one upper semiconductor chip. An insulating intermediate plate is arranged between the semiconductor chips. Connecting elements wire the semiconductor chips, the intermediate plate and external terminals to one another. | 10-23-2008 |
| 20080265440 | Semiconductor Device with a Semiconductor Chip and Electrical Connecting Elements to a Conductor Structure - A semiconductor device with a semiconductor chip and electrical connecting elements to a conductor structure and a method for producing the same is disclosed. In one embodiment, the conductor structure has a chip island and contact terminal areas. These are arranged in a coplanar manner in relation to each other. The semi-conductor structure is selectively coated by a filled plastic film. Both the semiconductor chip and the electrical connecting elements are mechanically fixed and electrically connected by means of the film-covered chip island and the film-covered contact terminal areas, respectively. | 10-30-2008 |
| 20080296782 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer applied onto the carrier, an adhesive layer applied to the electrically insulating layer. A first semiconductor chip applied to the adhesive layer. | 12-04-2008 |
| 20080303172 | METHOD FOR STACKING SEMICONDUCTOR CHIPS AND SEMICONDUCTOR CHIP STACK PRODUCED BY THE METHOD - Apparatus for packaging two chips includes, in some embodiments, a first chip having at least one elevation and at least one cutout on a bottom thereof. It also includes a second chip having at least one elevation and at least one cutout on a top thereof. In some embodiments disclosed, the elevations and cutouts of the first chip and the second chip are configured to allow the elevations to be intermeshed with the cutouts when the chips are stacked with the bottom of the first chip engaging the top of the second chip. | 12-11-2008 |
| 20080315438 | SEMICONDUCTOR DEVICE INCLUDING A STRESS BUFFER - An integrated circuit includes a first surface configured for mounting to a carrier, an active area of the integrated circuit spaced from the first surface, a bond pad disposed over and in electrical communication with the active area, and a ceramic inorganic stress-buffering layer disposed between the active area and the bond pad. | 12-25-2008 |
| 20090026558 | SEMICONDUCTOR DEVICE HAVING A SENSOR CHIP, AND METHOD FOR PRODUCING THE SAME - A semiconductor sensor device and method is disclosed. In one embodiment, the semiconductor device includes a cavity housing and a sensor chip. In one embodiment, the cavity housing has an opening to the surroundings. The sensor region of the sensor chip faces said opening. The sensor chip is mechanically decoupled from the cavity housing. In one embodiment, the sensor chip is embedded into a rubber-elastic composition on all sides in the cavity of the cavity housing. | 01-29-2009 |
| 20090032871 | INTEGRATED CIRCUIT WITH INTERCONNECTED FRONTSIDE CONTACT AND BACKSIDE CONTACT - An integrated circuit includes a substrate including an active area, a first metal contact contacting a frontside of the active area, a second metal contact contacting a backside of the active area, and a wafer-level deposited metal structure positioned adjacent to an edge of the active area and interconnecting the first and second contacts. | 02-05-2009 |
| 20090039484 | Semiconductor device with semiconductor chip and method for producing it - A semiconductor chip has at least one first contact and one second contact on its top side and has connecting elements which are arranged jointly on a structure element and which connect the first contact and the second contact of the top side of the semiconductor chip to the external contacts. | 02-12-2009 |
| 20090042337 | Method of Manufacturing an Integrated Circuit Module - A method includes providing an integral array of first carriers, arranging first semiconductor chips on the first carriers, and arranging an integral array of second carriers over the semiconductor chips. | 02-12-2009 |
| 20090051016 | ELECTRONIC COMPONENT WITH BUFFER LAYER - An electronic component includes a metal substrate, a semiconductor chip configured to be attached to the metal substrate, and a buffer layer positioned between the metal substrate and the semiconductor chip configured to mechanically decouple the semiconductor chip and the metal substrate. The buffer layer extends across less than an entire bottom surface of the semiconductor chip. | 02-26-2009 |
| 20090072379 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. One embodiment includes a carrier, a semiconductor chip attached to the carrier, a first conducting line having a first thickness and being deposited over the semiconductor chip and the carrier and a second conducting line having a second thickness and being deposited over the semiconductor chip and the carrier. The first thickness is smaller than the second thickness. | 03-19-2009 |
| 20090072413 | SEMICONDUCTOR DEVICE - A semiconductor device and method is disclosed. One embodiment provides a substrate and a first semiconductor chip applied over the substrate. A first electrically conductive layer is applied over the substrate and the first semiconductor chip. A first electrically insulating layer is applied over the first electrically conductive layer. A second electrically conductive layer is applied over the first electrically insulating layer. | 03-19-2009 |
| 20090072415 | INTEGRATED CIRCUIT DEVICE HAVING A GAS-PHASE DEPOSITED INSULATION LAYER - An integrated circuit device includes a semiconductor device having an integrated circuit. A gas-phase deposited insulation layer is disposed on the semiconductor device, and a conducting line is disposed over the gas-phase deposited insulation layer. | 03-19-2009 |
| 20090079065 | SEMICONDUCTOR DEVICE INCLUDING ELECTRONIC COMPONENT COUPLED TO A BACKSIDE OF A CHIP - A semiconductor package includes a substrate, at least one chip including a first side and a backside opposite of the first side, the first side electrically coupled to the substrate, a conductive layer coupled to the backside of the at least one chip, and at least one electronic component coupled to the conductive layer and in electrical communication with the substrate. | 03-26-2009 |
| 20090079088 | SEMICONDUCTOR DEVICE WITH CONDUCTIVE DIE ATTACH MATERIAL - A semiconductor device includes a carrier such as a lead frame, a semiconductor die and an attachment member affixing the semiconductor die to the carrier. The attachment device includes an electrically conductive organic material. | 03-26-2009 |
| 20090093090 | METHOD FOR PRODUCING A POWER SEMICONDUCTOR MODULE COMPRISING SURFACE-MOUNTABLE FLAT EXTERNAL CONTACTS - A method for producing a power semiconductor module having surface mountable flat external contact areas is disclosed. At least one power semiconductor chip is fixed by its rear side on a drain external contact. An insulation layer covers the top side over the side edges of the semiconductor chip as far as the inner housing plane was a leaving free the source and gate contact areas on the top side of the semiconductor chip and also was partly leaving free the top sides of the corresponding external contacts. | 04-09-2009 |
| 20090108423 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a leadframe defining a die pad, a chip electrically coupled to the die pad, encapsulation material covering the chip and the die pad, and a plurality of lead ends exposed relative to the encapsulation material and configured for electrical communication with the chip, and a nitrogen-containing hydrocarbon coating disposed over at least the lead ends of the leadframe, where the hydrocarbon coating is free of metal particles. | 04-30-2009 |
| 20090115060 | INTEGRATED CIRCUIT DEVICE AND METHOD - An integrated circuit device includes a semiconductor chip with a metallization layer on the chip. A gas-phase deposited insulation layer is disposed on the metallization layer. | 05-07-2009 |
| 20090189291 | MULTI-CHIP MODULE - A multi-chip module and method is disclosed. One embodiment provides an electronic module having a first metal structure and a second metal structure. A first semiconductor chip is electrically connected with its back side to the first metal structure. A second semiconductor chip is arranged with its back side lying over the front side of the first semiconductor chip. The second metal structure includes multiple external contact elements attached over the front side of the second semiconductor chip. At least two of the multiple external contact elements are electrically connected to the front side of the second semiconductor chip. | 07-30-2009 |
| 20090194882 | ELECTRONIC DEVICE - One embodiment provides a method of manufacturing semiconductor devices. For example, a sawn and expanded wafer is utilized having dielectrical material deposited between the diced and deposited chips. The method includes placing at least two chips on a metallic layer, depositing mold material on the metallic layer and between the chips, and selectively removing a portion of the mold material from the metallic layer to selectively expose a portion of the metallic layer. The method additionally includes covering the selectively exposed portion of the metallic layer with a conductive material, and singulating the at least two chips. | 08-06-2009 |
| 20090236757 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING - A semiconductor device and method for manufacturing. One embodiment includes a carrier, a structured layer arranged over the carrier and a semiconductor chip applied to the structured layer. The structured layer includes a first structure made of an elastic material and a second structure made of an adhesive material. | 09-24-2009 |
| 20090256247 | SEMICONDUCTOR DEVICE AND METHOD INCLUDING FIRST AND SECOND CARRIERS - A semiconductor device and method. One embodiment provides an integral array of first carriers and an integral array of second carries connected to the integral array of first carriers. First semiconductor chips are arranged on the integral array of first carriers. The integral array of second carriers is arranged over the first semiconductor chips. | 10-15-2009 |
| 20090273063 | SEMICONDUCTOR DEVICE - One embodiment provides a semiconductor device including a carrier, a first chip attached to the carrier, a structured dielectric coupled to the chip and to the carrier, and a conducting element electrically connected with the chip and extending over a portion of the structured dielectric. The conducting element includes a sintered region. | 11-05-2009 |
| 20090280314 | THERMOPLASTIC-THERMOSETTING COMPOSITE AND METHOD FOR BONDING A THERMOPLASTIC MATERIAL TO A THERMOSETTING MATERIAL - Composite with a first part composed of a thermoset material and with a second part composed of a thermoplastic material, and with an adhesion-promoter layer located between these, where the first part has been bonded by way of the adhesion-promoter layer to the second part, and where the adhesion-promoter layer comprises pyrolytically deposited semiconductor oxides and/or pyrolytically deposited metal oxides. | 11-12-2009 |
| 20090283879 | SEMICONDUCTOR DEVICE AND METHOD - A chip carrier includes first, second and third layers with the second layer situated between the first and third layers. The first and third layers are formed of a first material and the second layer is formed of a second material. The second layer has a plurality of holes extending therethrough and the first material fills the holes. | 11-19-2009 |
| 20090289354 | ELECTRONIC MODULE - An electronic module. One embodiment includes a carrier. A first transistor is attached to the carrier. A second transistor is attached to the carrier. A first connection element includes a first planar region. The first connection element electrically connects the first transistor to the carrier. A second connection element includes a second planar region. The second connection element electrically connects the second transistor to the carrier. In one embodiment, a distance between the first planar region and the second planar region is smaller than 100 μm. | 11-26-2009 |
| 20100001414 | MANUFACTURING A SEMICONDUCTOR DEVICE VIA ETCHING A SEMICONDUCTOR CHIP TO A FIRST LAYER - A method of manufacturing a semiconductor device. The method includes providing a semiconductor chip including contact elements on a first face and a first layer between the first face and a second face opposite the first face. Placing the semiconductor chip on a carrier with the contact elements facing the carrier and etching the semiconductor chip until the first layer is reached. | 01-07-2010 |
| 20100025829 | SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes providing a foil formed of an insulating material, where the foil includes at least one electrically conducting element, providing a chip having contact elements on a first face of the chip, and applying the foil over the contact elements of the chip. | 02-04-2010 |
| 20100032816 | Electronic Device and Method of Manufacturing Same - This application relates to a semiconductor device, the semiconductor device comprising a metal carrier, an insulating foil partially covering the metal carrier, a first chip attached to the metal carrier over the insulating foil, and a second chip attached to the metal carrier over a region not covered by the insulating foil. | 02-11-2010 |
| 20100044841 | SEMICONDUCTOR DEVICE - A semiconductor device includes a carrier, a chip attached to the carrier, a sealant vapor deposited over the chip and the carrier, and encapsulation material deposited over the sealed chip and the sealed carrier. | 02-25-2010 |
| 20100044842 | SEMICONDUCTOR DEVICE - A semiconductor device includes a carrier, a chip coupled to the carrier, a dielectric layer coupled to the carrier and the chip, and conducting elements connected to both the carrier and contacts of the chip. The chip includes a first face with a first contact spaced apart from a second contact. The dielectric layer includes a photoinitiator that configures the dielectric layer to be selectively opened to expose the first and second contacts and the carrier. A first conducting element is connected to the first contact, a second conducting element is connected to the second contact, and a third conducting element is connected to the carrier. | 02-25-2010 |
| 20100044885 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device and manufacturing method. One embodiment provides at least two semiconductor chips. A dielectric material is applied to the at least two semiconductor chips to attach the at least two semiconductor chips to each other. A portion of the dielectric material is selectively removed between the at least two semiconductor chips to form at least one recess in the dielectric material. Metal particles including paste is applied to the at least one recess in the dielectric material. | 02-25-2010 |
| 20100059864 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ETCHING TO ETCH STOP REGIONS - A method of manufacturing a semiconductor device. The method includes providing a wafer having a first face and a second face opposite the first face, selectively doping the wafer via the first face to selectively form etch stop regions in the wafer and etching the wafer at the second face to the etch stop regions. | 03-11-2010 |
| 20100072628 | SEMICONDUCTOR DEVICE - A semiconductor device includes a carrier and a first chip attached to the carrier. The semiconductor device includes a sintered insulation material over at least a portion of the carrier and the first chip. | 03-25-2010 |
| 20100078782 | COATING COMPOSITION AND A METHOD OF COATING - A coating composition including a compound having a first molecular group or a first combination of atoms, the first molecular group or the first combination of atoms capable of bonding to an oxidizable metal or a metal oxide, and a second molecular group or a second combination of atoms, the second molecular group or the second combination of atoms capable of interacting with a precursor of a polymer so the compound and the polymer are bound together. | 04-01-2010 |
| 20100099223 | INTEGRATED CIRCUIT DEVICE AND METHOD - An integrated circuit device includes a semiconductor chip with a metallization layer on the chip. A gas-phase deposited insulation layer is disposed on the metallization layer. | 04-22-2010 |
| 20100129552 | LOW VISCOSITY POLYMERIC PRINTING SOLUTIONS AND ELECTRONIC COMPONENTS BEARING POLYIMIDE BASED UPON THE LOW VISCOSITY POLYMERIC PRINTING SOLUTIONS - An electrical component that includes a substrate and a polymeric layer oriented in working relation with the substrate, the polymeric layer including a low molecular mass polyimide. | 05-27-2010 |
| 20100148381 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. One aspect provides a semiconductor device that includes a semiconductor chip including a first face and a second face opposite the first face, an encapsulant including inorganic particles encapsulating the semiconductor chip, a first metal layer attached to the first face of the semiconductor chip, a second metal layer attached the second face of the semiconductor chip, and electrically conducting material configured to connect the first metal layer with the second metal layer. | 06-17-2010 |
| 20100157568 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - One aspect is a method of manufacturing a semiconductor device and semiconductor device. One embodiment provides a plurality of modules. Each of the modules includes a carrier and at least one semiconductor chip attached to the carrier. A dielectric layer is applied to the modules to form a workpiece. The dielectric layer is structured to open at least one of the semiconductor chips. The workpiece is singulated to obtain a plurality of devices. | 06-24-2010 |
| 20100200978 | SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes placing a chip on a carrier, and applying an electrically conducting layer to the chip and the carrier. The method additionally includes converting the electrically conducting layer into an electrically insulating layer. | 08-12-2010 |
| 20100207263 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first chip coupled to an electrical insulator, and a sintered heat conducting layer disposed between the electrical insulator and the first chip. | 08-19-2010 |
| 20100207277 | SEMICONDUCTOR COMPONENT HAVING A STACK OF SEMICONDUCTOR CHIPS AND METHOD FOR PRODUCING THE SAME - A semiconductor component including a stack of semiconductor chips, the semiconductor chips being fixed cohesively one on top of another, is disclosed. The contact areas of the semiconductor chips are led as far as the edges of the semiconductor chips and conductor portions extend at least from an upper edge to a lower edge of the edge sides of the semiconductor chips in order to electrically connect the contact area of the stacked semiconductor chips to one another. | 08-19-2010 |
| 20100210071 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A method of manufacturing a semiconductor device. The method includes providing a metal carrier, attaching chips to the carrier, and applying a metal layer over the chips and the metal carrier to electrically couple the chips to the metal carrier. The metal carrier is segmented, after applying the metal layer, to obtain metal contact elements. | 08-19-2010 |
| 20100213613 | ARRANGEMENT FOR ELECTRICALLY CONNECTING SEMICONDUCTOR CIRCUIT ARRANGEMENTS TO AN EXTERNAL CONTACT DEVICE AND METHOD FOR PRODUCING THE SAME - An electrical connection arrangement between a semiconductor circuit arrangement and an external contact device, and to a method for producing the connection arrangement is disclosed. In one embodiment, a metallic layer is deposited onto at least one contact terminal and/or the contacts and the wire, the metallic layer protecting the contact terminal or the electrical connection against ambient influences and ensuring a high reliability. | 08-26-2010 |
| 20100230798 | SEMICONDUCTOR DEVICE INCLUDING SPACER ELEMENT - A semiconductor device includes a metal carrier and a spacer element attached to the metal carrier. The semiconductor device includes a first sintered metal layer on the spacer element and a semiconductor chip on the first sintered metal layer. | 09-16-2010 |
| 20100276797 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate having a chip island, a chip attached to the chip island, and encapsulation material deposited on the chip and part of the chip island. The chip island includes a first main face to which the chip is attached opposite a second main face, with the second main face of the chip island defining at least one cavity. | 11-04-2010 |
| 20110031597 | SEMICONDUCTOR DEVICE AND METHOD INCLUDING FIRST AND SECOND CARRIERS - A semiconductor device and method. One embodiment provides an integral array of first carriers and an integral array of second carries connected to the integral array of first carriers. First semiconductor chips are arranged on the integral array of first carriers. The integral array of second carriers is arranged over the first semiconductor chips. | 02-10-2011 |
| 20110031602 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - The method comprises providing multiple chips attached to a first carrier, stretching the first carrier so that the distance between adjacent ones of the multiple chips is increased, and applying a laminate to the multiple chips and the stretched first carrier to form a first workpiece embedding the multiple chips, the first workpiece having a first main face facing the first carrier and a second main face opposite to the first main face. | 02-10-2011 |
| 20110108971 | LAMINATE ELECTRONIC DEVICE - A laminate electronic device comprises a first semiconductor chip, the first semiconductor chip defining a first main face and a second main face opposite to the first main face, and having at least one electrode pad on the first main face. The laminate electronic device further comprises a carrier having a first structured metal layer arranged at a first main surface of the carrier. The first structured metal layer is bonded to the electrode pad via a first bond layer of a conductive material, wherein the first bond layer has a thickness of less than 10 μm. A first insulating layer overlies the first main surface of the carrier and the first semiconductor chip. | 05-12-2011 |
| 20110127675 | LAMINATE ELECTRONIC DEVICE - A method of manufacturing a laminate electronic device is disclosed. One embodiment provides a carrier, the carrier defining a first main surface and a second main surface opposite to the first main surface. The carrier has a recess pattern formed in the first main surface. A first semiconductor chip is attached on one of the first and second main surface. A first insulating layer overlying the main surface of the carrier on which the first semiconductor chip is attached and the first semiconductor chip is formed. The carrier is then separated into a plurality of parts along the recess pattern. | 06-02-2011 |
