Patent application number | Description | Published |
20120161103 | ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP - An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm. | 06-28-2012 |
20120298964 | Light-Emitting Semiconductor Chip - A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak. | 11-29-2012 |
20130214285 | Semiconductor Component and Method for Producing a Semiconductor Component - A semiconductor component has a semiconductor layer sequence made of a nitridic composite semiconductor material on a substrate. The substrate includes a silicon surface facing the semiconductor layer sequence. The semiconductor layer sequence includes an active region and at least one intermediate layer made of an oxygen-doped AN composite semiconductor material between the substrate and the active region. | 08-22-2013 |
20130264598 | Method for Producing a Semiconductor Layer Sequence, Radiation-Emitting Semiconductor Chip and Optoelectronic Component - A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed. | 10-10-2013 |
20140057417 | Method for Producing an Optoelectronic Semiconductor Chip - A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner. | 02-27-2014 |
20140203413 | Composite Substrate, Semiconductor Chip Having a Composite Substrate and Method for Producing Composite Substrates and Semiconductor Chips - A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate. | 07-24-2014 |
20140342484 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND CORRESPONDING OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing a semiconductor chip includes providing a silicon growth substrate, producing a III nitride buffer layer on the growth substrate by sputtering, and growing a III nitride semiconductor layer sequence having an active layer above the buffer layer. | 11-20-2014 |
20140346541 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer. | 11-27-2014 |
20150031150 | METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR COMPONENT - A method for producing a radiation-emitting semiconductor component is provided, comprising the following steps:—providing a growth substrate ( | 01-29-2015 |
20150044798 | Method for Producing an Optoelectronic Component - A method for producing an optoelectronic component is provided. A transfer layer, containing In | 02-12-2015 |
20150076507 | EPITAXY SUBSTRATE, METHOD FOR PRODUCING AN EPITAXY SUBSTRATE AND OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING AN EPITAXY SUBSTRATE - An epitaxy substrate ( | 03-19-2015 |