Patent application number | Description | Published |
20080245400 | NITRIDE-BASED MULTI-JUNCTION SOLAR CELL MODULES AND METHODS FOR MAKING THE SAME - A backside illuminated multi-junction solar cell module includes a substrate, multiple multi-junction solar cells, and a cell interconnection that provides a series connection between at least two of the multi-junction solar cells. The substrate may include a material that is substantially transparent to solar radiation. Each multi-junction solar cell includes a first active cell, grown over the substrate, for absorbing a first portion of the solar radiation for conversion into electrical energy and a second active cell, grown over the first active cell, for absorbing a second portion of the solar radiation for conversion into electrical energy. At least one of the first and second active cells includes a nitride. | 10-09-2008 |
20080257409 | PHOTOVOLTAICS ON SILICON - Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material. | 10-23-2008 |
20090039361 | LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES WITH REDUCED DISLOCATION DEFECT DENSITIES AND RELATED METHODS FOR DEVICE FABRICATION - A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening. | 02-12-2009 |
20100216277 | Formation of Devices by Epitaxial Layer Overgrowth - Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer. | 08-26-2010 |
20110011438 | Nitride-Based Multi-Junction Solar Cell Modules and Methods for Making the Same - A backside illuminated multi junction solar cell module includes a substrate, multiple multi junction solar cells, and a cell interconnection that provides a series connection between at least two of the multi junction solar cells. The substrate may include a material that is substantially transparent to solar radiation. Each multi junction solar cell includes a first active cell, grown over the substrate, for absorbing a first portion of the solar radiation for conversion into electrical energy and a second active cell, grown over the first active cell, for absorbing a second portion of the solar radiation for conversion into electrical energy. At least one of the first and second active cells includes a nitride. | 01-20-2011 |
20110174376 | Monocrystalline Thin Cell - A device, system, and method for solar cell construction and bonding/layer transfer are disclosed herein. An exemplary structure of solar cell construction involves providing a monocrystalline donor absorber layer. A conductive bonding layer bonds the absorber layer to a carrier substrate. A porous layer or ion implant may be used to form the donor absorber layer. | 07-21-2011 |
20120068226 | Formation of Devices by Epitaxial Layer Overgrowth - Methods and structures are provided for formation of devices on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer. | 03-22-2012 |
20130134480 | Formation of Devices by Epitaxial Layer Overgrowth - Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer. | 05-30-2013 |
20130252361 | Light-Emitter-Based Devices with Lattice-Mismatched Semiconductor Structures - Some aspects for the invention include a method and a structure including a light-emitting device disposed over a second crystalline semiconductor material formed over a semiconductor substrate comprising a first crystalline material. | 09-26-2013 |
20140090688 | Nitride-Based Multi-Junction Solar Cell Modules and Methods for Making the Same - A backside illuminated multi-junction solar cell module includes a substrate, multiple multi-junction solar cells, and a cell interconnection that provides a series connection, between at least two of the multi-junction solar cells. The substrate may include a material that is substantially transparent to solar radiation. Each multi-junction solar cell includes a first active cell, grown over the substrate, for absorbing a first portion of the solar radiation for conversion into electrical energy and a second active cell, grown over the first active cell, for absorbing a second portion of the solar radiation for conversion into electrical energy. At least one of the first and second active cells includes a nitride. | 04-03-2014 |