| Patent application number | Description | Published |
|---|
| 20080210921 | Silver selenide film stoichiometry and morphology control in sputter deposition - A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr. | 09-04-2008 |
| 20080230861 | CMOS front end process compatible low stress light shield - An improved imaging device having a pixel arrangement featuring a multilayer light shield. The multilayer light shield includes stacked layers of light-shielding and light-transparent material. The light-transparent material, such as a dielectric, is selected to have a stress, such as a tensile stress, that offsets the stress, such as a compressive stress, of the light shielding material. Without the stress offset, the high compressive stress of the refractory metal could damage the integrity of the nearby silicon. The refractory metal is capable of withstanding the high temperatures associated with front end CMOS processing. The laminate structure allows the light shield to be placed close to the pixel surface. The light-transparent material has a thickness equal to about one-quarter wavelength of the light to be blocked, to act as an anti-reflective coating. An aperture in the light shield exposes the active region of the pixel's photoconversion device. | 09-25-2008 |
| 20080268611 | Shallow trench isolation by atomic-level silicon reconstruction - Methods of forming an improved shallow trench isolation (STI) region are disclosed. Several exemplary techniques are proposed for treating STI sidewalls to improve the silicon (Si) surface at the atomic level. Each of the exemplary methods creates a smooth STI sidewall surface, prior to performing oxidation, by reconstructing silicon atoms at the surface. The suggested STI region can be used in imager pixel cells or memory device applications. | 10-30-2008 |
| 20080284025 | Electrically Conductive Line - The invention includes an electrically conductive line, methods of forming electrically conductive lines, and methods of reducing titanium silicide agglomeration in the fabrication of titanium silicide over polysilicon transistor gate lines. In one implementation, a method of forming an electrically conductive line includes providing a silicon-comprising layer over a substrate. An electrically conductive layer is formed over the silicon-comprising layer. An MSi | 11-20-2008 |
| 20090098717 | CO-SPUTTER DEPOSITION OF METAL-DOPED CHALCOGENIDES - The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (Ge | 04-16-2009 |
| 20090109542 | Lens, a lens array and imaging device and system having a lens, and method of forming the same - A lens, a lens array and imaging device and system containing a lens, and a method of forming a lens array and an imaging device and system containing a lens. Each lens has varying reflection indices in a radial direction. | 04-30-2009 |
| 20090147379 | Microlenses with patterned holes to produce a desired focus location - A method, apparatus and system providing a microlens having a substantially flat upper surface and having a plurality of holes arranged in a pattern in a microlens material which produces a focal point at a desired location. | 06-11-2009 |
| 20100213574 | HIGH DIELECTRIC CONSTANT TRANSITION METAL OXIDE MATERIALS - A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium oxide or zirconium oxide and the dopant is nitrogen. The dopant can convert the crystal structure of the hafnium oxide or zirconium oxide to a tetragonal structure and increase the dielectric constant of the metal oxide. | 08-26-2010 |
| 20100219391 | LAYERED RESISTANCE VARIABLE MEMORY DEVICE AND METHOD OF FABRICATION - The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to one embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between two glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a Ge | 09-02-2010 |
| 20100255190 | METHOD AND APPARATUS PROVIDING REFRACTIVE INDEX STRUCTURE FOR A DEVICE CAPTURING OR DISPLAYING IMAGES - A transient index stack having an intermediate transient index layer, for use in an imaging device or a display device, that reduces reflection between layers having different refractive indexes by making a gradual transition from one refractive index to another. Other embodiments include a pixel array in an imaging or display device, an imager system having improved optical characteristics for reception of light by photosensors and a display system having improved optical characteristics for transmission of light by photoemitters. Enhanced reception of light is achieved by reducing reflection between a photolayer, for example, a photosensor or photoemitter, and surrounding media by introducing an intermediate layer with a transient refractive index between the photolayer and surrounding media such that more photons reach the photolayer. The surrounding media can include a protective layer of optically transparent media. | 10-07-2010 |
| 20110014115 | SILVER SELENIDE SPUTTERED FILMS AND METHOD AND APPARATUS FOR CONTROLLING DEFECT FORMATION IN SILVER SELENIDE SPUTTERED FILMS - Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm | 01-20-2011 |
