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Jisu

Jisu Jeong, Daejeon KR

Patent application numberDescriptionPublished
20100029896Novel Coordination complexes and process of producing polycarbonate by copolymerization of carbon dioxide and epoxide using the same as catalyst - Provided are a complex prepared from ammonium salt-containing ligands and having such an equilibrium structural formula that the metal center takes a negative charge of 2 or higher, and a method for preparing polycarbonate via copolymerization of an epoxide compound and carbon dioxide using the complex as a catalyst. When the complex is used as a catalyst for copolymerizing an epoxide compound and carbon dioxide, it shows high activity and high selectivity and provides high-molecular weight polycarbonate, and thus easily applicable to commercial processes. In addition, after forming polycarbonate via carbon dioxide/epoxide copolymerization using the complex as a catalyst, the catalyst may be separately recovered from the copolymer.02-04-2010
20100081776TRANSITION METAL CATALYTIC SYSTEMS AND METHODS FOR PREPARING ETHYLENE HOMOPOLYMERS OR COPOLYMERS OF ETHYLENE AND a-OLEFINS USING THE SAME - Provided are transition metal catalytic systems for preparing ethylene homopolymers or copolymers of ethylene with α-olefins. More specifically, provided are Group 4 transition metal catalysts, which is characterized in that the catalyst comprises around the Group 4 transition metal a cyclopentadiene derivative, and at least one aryloxide ligand(s) having a fluorenyl group or a derivative thereof (which is ready to be substituted at 9-position) that functions as an electron donor and serves to stabilize the catalytic system by surrounding an oxygen atom that links the ligand to the transition metal at ortho-position, and there is no cross-linkage between the ligands; catalytic systems comprising such transition metal catalyst and aluminoxane cocatalyst or boron compound cocatalyst; and processes for preparing ethylene homopolymers or copolymers of ethylene with α-olefins by using the same.04-01-2010
20100113720METHOD FOR PREPARING ELASTOMERIC COPOLYMERS OF ETHYLENE AND ALPHA-OLEFINS - Provided is a process for preparing copolymers of ethylene with α-olefin. More specifically, provided are transition metal compound being useful as catalyst for preparing those copolymers, a catalyst composition comprising the same, and a process for preparing elastic copolymers of ethylene with α-olefin, having the density of not more than 0.910, which can be adopted to a wide variety of applications including film, electric wires, and hot-melt adhesives. The catalyst composition is a catalytic system which comprises transition metal catalyst comprising a cyclopentadiene derivative and at least one anionic ligand(s) of aryloxy group with an aryl derivative at ortho-position, and boron or aluminum compound as an activator. Provided is a process for copolymerizing ethylene with α-olefin to produce copolymer having narrow molecular weight distribution and uniform density distribution with the density of not more than 0.910, with high activity and excellent reactivity on higher α-olefin.05-06-2010
20100120981ETHYLENE COPOLYMER AND A METHOD OF PREPARING THE SAME - Provided are ethylene copolymers and a process for preparing the same. More specifically, provided are ethylene copolymers exhibiting excellent processibility and physical properties due to its multimodal molecular weight distribution index, through a multi-stage process by using reactors connected in series or in parallel in the presence of catalyst composition containing transition metal catalyst, and a process for preparing the same.05-13-2010
20100324260Catalytic System for CO2/Epoxide Copolymerization - The present invention related to a method of manufacturing a polycarbonate including the process of copolymerizing epoxide compound and CO2 using cobalt(III) or chromium(III), where the ligands contains at least 3 ammonium cations, central metal has formal −1 charge, and conjugated anions of the two cationic ammonium groups are acid-base homoconjugation, as catalyst.12-23-2010
20110054145Continuous Process for Manufacturing Aliphatic Polycarbonates from Carbon Dioxide and Epoxides - Disclosed is a continuous process for manufacturing aliphatic polycarbonate by polymerizing carbon dioxide and one or more epoxide compound in the presence of catalyst, in which carbon dioxide, one or more epoxide compound, and the catalyst are continuously supplied to polymerization reactor to produce aliphatic polycarbonate, separate unreacted carbon dioxide and epoxide compound and recycle them as raw materials.03-03-2011
20110098426TRANSITION METAL CATALYTIC SYSTEMS AND METHODS FOR PREPARING ETHYLENE HOMOPOLYMERS OR COPOLYMERS OF THE ETHYLENE AND a-OLEFINS USING THE SAME - Provided are transition metal catalytic systems for preparing ethylene homopolymers or copolymers of ethylene with α-olefins. More specifically, provided are Group 4 transition metal catalysts, which is characterized in that the catalyst comprises around the Group 4 transition metal a cyclopentadiene derivative, and at least one aryloxide ligand(s) having a fluorenyl group or a derivative thereof (which is ready to be substituted at 9-position) that functions as an electron donor and serves to stabilize the catalytic system by surrounding an oxygen atom that links the ligand to the transition metal at ortho-position, and there is no cross-linkage between the ligands; catalytic systems comprising such transition metal catalyst and aluminoxane cocatalyst or boron compound cocatalyst; and processes for preparing ethylene homopolymers or copolymers of ethylene with α-olefins by using the same.04-28-2011

Jisu Kim, Seoul KR

Patent application numberDescriptionPublished
20090265678System and Method of Resistance Based Memory Circuit Parameter Adjustment - Systems and methods of resistance based memory circuit parameter adjustment are disclosed. In a particular embodiment, a method of determining a set of parameters of a resistance based memory circuit includes selecting a first parameter based on a first predetermined design constraint of the resistance based memory circuit and selecting a second parameter based on a second predetermined design constraint of the resistance based memory circuit. The method further includes performing an iterative methodology to adjust at least one circuit parameter of a sense amplifier portion of the resistance based memory circuit by selectively assigning and adjusting a physical property of the at least one circuit parameter to achieve a desired sense amplifier margin value without changing the first parameter or the second parameter.10-22-2009
20100157654Balancing A Signal Margin Of A Resistance Based Memory Circuit - A resistance based memory circuit is disclosed. The circuit includes a first transistor load of a data cell and a bit line adapted to detect a first logic state. The bit line is coupled to the first transistor load and coupled to a data cell having a magnetic tunnel junction (MTJ) structure. The bit line is adapted to detect data having a logic one value when the bit line has a first voltage value, and to detect data having a logic zero value when the bit line has a second voltage value. The circuit further includes a second transistor load of a reference cell. The second transistor load is coupled to the first transistor load, and the second transistor load has an associated reference voltage value. A characteristic of the first transistor load, such as transistor width, is adjustable to modify the first voltage value and the second voltage value without substantially changing the reference voltage value.06-24-2010
20100321976Split Path Sensing Circuit - A sensing circuit is disclosed. The sensing circuit includes a first path including a first resistive memory device and a second path including a reference resistive memory device. The first path is coupled to a first split path including a first load transistor and to a second split path including a second load transistor. The second path is coupled to a third split path including a third load transistor and to a fourth split path including a fourth load transistor.12-23-2010

Jisu Yoon, Paju-Si KR

Patent application numberDescriptionPublished
20100165601Light emitting diode module and back light assembly - The present application presents a light emitting diode module comprising a substrate including a first insulating layer, a second insulating layer, and a metal layer between the first and the second insulating layers; a groove formed at the first insulating layer for exposing the metal layer; and a light emitting element disposed at the groove, and including an LED chip and body part surrounding the LED chip, wherein the LED chip contacts the metal layer for radiating heat.07-01-2010