Patent application number | Description | Published |
20100190108 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including:
| 07-29-2010 |
20110008728 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition including: a base component which exhibits changed solubility in an alkali developing solution under the action of acid; and an acid-generator component containing an acid generator (B1) consisting of a compound represented by general formula (b1); dissolved in an organic solvent containing an alcohol-based organic solvent having a boiling point of at least 150° C., wherein R | 01-13-2011 |
20110061678 | Cleaning liquid for lithography and a cleaning method using it for photoexposure devices - Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production. | 03-17-2011 |
20110262872 | METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION - There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning. | 10-27-2011 |
20120183899 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the α-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule. | 07-19-2012 |
20130017500 | METHOD OF FORMING RESIST PATTERNAANM Yokoya; JiroAACI Kawasaki-shiAACO JPAAGP Yokoya; Jiro Kawasaki-shi JPAANM Nakamura; TsuyoshiAACI Kawasaki-shiAACO JPAAGP Nakamura; Tsuyoshi Kawasaki-shi JPAANM Shimizu; HiroakiAACI Kawasaki-shiAACO JPAAGP Shimizu; Hiroaki Kawasaki-shi JPAANM Takeshita; MasaruAACI Kawasaki-shiAACO JPAAGP Takeshita; Masaru Kawasaki-shi JPAANM Nito; HidetoAACI Kawasaki-shiAACO JPAAGP Nito; Hideto Kawasaki-shi JPAANM Saito; HirokuniAACI Kawasaki-shiAACO JPAAGP Saito; Hirokuni Kawasaki-shi JP - A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed. | 01-17-2013 |
20130078572 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition used in a method of forming a resist pattern including applying a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component to a substrate to form a resist film; subjecting the resist film to exposure; baking after subjecting the resist film to exposure, wherein at an exposed portion of the resist film, the base generated from the photo-base generator component upon exposure and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of acid provided to the resist film in advance; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern. | 03-28-2013 |
20130084523 | RESIST COMPOSITIOIN AND METHOD OF FORMING RESIST PATTERN - A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1). | 04-04-2013 |
20130115555 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - There are provided a method of forming a resist pattern includes: a step ( | 05-09-2013 |
20130137047 | METHOD OF FORMING RESIST PATTERN - A method of forming a resist pattern including: step (1) in which a resist composition including a base component and a photobase generator component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to immersion exposure; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, wherein a receding angle of water on the resist film is 65° or more. | 05-30-2013 |
20130177853 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A method of forming a resist pattern, including: step (1) in which a resist composition containing a base component (A) that exhibits increased solubility in an alkali developing solution and a compound represented by general formula (C1) is applied to a substrate to form a resist film, step (2) in which the resist film is subjected to exposure, step (3) in which baking is conducted after step (2), and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern; and the resist composition used in step (1): | 07-11-2013 |
20130177854 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND NOVEL COMPOUND - A resist composition including a base component (A) which exhibits changed solubility in a developing solution, and an acidic compound component (J) which is decomposed by exposure to exhibit decreased acidity, wherein the acidic compound component (J) contains a compound represented by formula (J1) [in the formula, R | 07-11-2013 |
20130189618 | METHOD OF FORMING RESIST PATTERN - A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern. | 07-25-2013 |
20130260314 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND POLYMERIC COMPOUND - There is provided a resist composition including a polymeric compound (A1) containing a structural unit derived from a compound represented by general formula (a0-m), and a method of forming a resist pattern using the resist composition. In the formula, R | 10-03-2013 |
20130344436 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A resist composition which generates a base upon exposure and exhibits increased solubility in an alkali developing solution under the action of acid, and the resist composition including: a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; an acidic compound component (G1) including a nitrogen-containing cation having a pKa value of 7 or less and a counteranion; and a buffer component (K) including a nitrogen-containing cation and a counteranion being a conjugate base for the acid having a pKa value of 0 to 5. | 12-26-2013 |
20140363770 | NEGATIVE TONE RESIST COMPOSITION FOR SOLVENT DEVELOPING AND METHOD OF FORMING RESIST PATTERN - A negative tone resist composition for solvent developing including: a base component (A) which exhibits decreased solubility in an organic solvent under the action of acid; a photodecomposable quencher (D0) which generates acid having a pKa of 2.0 or more; and a fluorine additive (F) containing a fluorine-containing polymeric compound (f) which has a structural unit (f0-1) represented by general formula (f0-1) shown below or a structural unit (f0-2) represented by general formula (f0-2) shown below. In the formulae, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; and R | 12-11-2014 |