| Patent application number | Description | Published |
|---|
| 20080308534 | PYROMETER FOR LASER ANNEALING SYSTEM COMPATIBLE WITH AMORPHOUS CARBON OPTICAL ABSORBER LAYER - In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band. | 12-18-2008 |
| 20090032511 | Apparatus and method of improving beam shaping and beam homogenization - The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. Typically, the anneal regions may be square or rectangular in shape. Generally, the optical system and methods of the present invention are used to preferentially anneal one or more regions found within the anneal regions by delivering enough energy to cause the one or more regions to re-melt and solidify. | 02-05-2009 |
| 20090034071 | METHOD FOR PARTITIONING AND INCOHERENTLY SUMMING A COHERENT BEAM - A method and apparatus for decorrelating coherent light from a light source, such as a pulsed laser, in both time and space in an effort to provide intense and uniform illumination are provided. For some embodiments employing a pulsed light source, the output pulse may be stretched relative to the input pulse width. The methods and apparatus described herein may be incorporated into any application where intense, uniform illumination is desired, such as pulsed laser annealing, welding, ablating, and wafer stepper illuminating. | 02-05-2009 |
| 20090034072 | METHOD AND APPARATUS FOR DECORRELATION OF SPATIALLY AND TEMPORALLY COHERENT LIGHT - A method and apparatus for decorrelating coherent light from a light source, such as a pulsed laser, in both time and space in an effort to provide intense and uniform illumination are provided. The techniques and apparatus described herein may be incorporated into any application where intense, uniform illumination is desired, such as pulsed laser annealing, welding, ablating, and wafer stepper illuminating. | 02-05-2009 |
| 20090046750 | INCREASED NANOSECOND LASER PULSE-TO-PULSE ENERGY REPEATABILITY USING ACTIVE LASER PULSE ENERGY CONTROL - A method and apparatus for reducing the pulse-to-pulse laser energy variation (i.e., increasing the pulse-to-pulse laser energy repeatability) from a pulsed laser source are provided. In this manner, laser pulses impingent on a processing plane, such as the surface of a wafer or other substrate, may have substantially the same energy content leading to a more controlled process when compared to conventional processing. The method may be based on in-situ detection of the pulse energy level and the subsequent active adjustment of the transmitted laser pulse energy in a closed-loop control scheme. Furthermore, the active adjustment of the laser pulse energy may occur within a few nanoseconds after the original laser pulse is generated by a pulsed laser source. | 02-19-2009 |
| 20090200279 | AUTOMATIC FOCUS AND EMISSIVITY MEASUREMENTS FOR A SUBSTRATE SYSTEM - An apparatus for thermally processing a substrate includes a first radiation source configured to heat a substrate and emit radiation at a heating wavelength, focusing optics configured to direct radiation from the first radiation source to the substrate, and a second radiation source configured to emit radiation at a second wavelength different from the heating wavelength and at a lower power than the first radiation source. Radiation from the second radiation source is directed onto the substrate. The apparatus further includes a first detector configured to receive reflected radiation at the second wavelength and a computer system configured to receive an output from the first detector and adjust a focus plane of the first radiation source relative to the substrate. The second radiation source is configured to have substantially the same focus plane as the first radiation source. | 08-13-2009 |
| 20100054720 | Method and Apparatus for Extended Temperature Pyrometry - Embodiments of the invention are directed to methods and apparatus for rapid thermal processing of a substrate over an extended temperature range, including low temperatures. Systems and methods for using an extended temperature pyrometry system employing a transmitted radiation detector system are disclosed. Systems combining transmitted radiation detector systems and emitted radiation detector systems are also described. | 03-04-2010 |
| 20100075490 | DEFECT-FREE JUNCTION FORMATION USING LASER MELT ANNEALING OF OCTADECABORANE SELF-AMORPHIZING IMPLANTS - A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then melted, resolidified, and annealed to completely dissociate and activate the boron clusters. | 03-25-2010 |
| 20100266268 | Multi-stage Optical Homogenization - Substrate processing equipment and methods are used to improve the uniformity of illumination across an illuminated portion of a substrate by processing light with multiple optical homogenizers. The multiple optical homogenizers each include micro-lens arrays and Fourier lens. The multiple optical homogenizers are arranged so that the output numerical aperture of one of the optical homogenizers is within 5% of the input numerical aperture of another optical homogenizer. | 10-21-2010 |
| 20110006044 | PYROMETER FOR LASER ANNEALING SYSTEM COMPATIBLE WITH AMORPHOUS CARBON OPTICAL ABSORBER LAYER - In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band. | 01-13-2011 |
| 20110070724 | DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS - A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process. | 03-24-2011 |
