Jinyoung Kim
Jinyoung Kim, Edina, MN US
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20100109085 | MEMORY DEVICE DESIGN - Memory elements and methods for making memory elements. One method of making a memory element includes forming a first electrode, forming an electrically conductive current densifying element and a memory cell on the first electrode, the memory cell and the current densifying element adjacent to each other. A second electrode is formed over the current densifying element and the memory cell. The memory elements may be resistance random access memory elements. | 05-06-2010 |
20110006377 | Patterning Embedded Control Lines for Vertically Stacked Semiconductor Elements - Various embodiments of the present invention are generally directed to an apparatus with embedded (bottom side) control lines for vertically stacked semiconductor elements, and a method for forming the same. In accordance with various embodiments, a first semiconductor wafer is provided with a first facing surface on which a first conductive layer is formed. The first semiconductor wafer is attached to a second semiconductor wafer to form a multi-wafer structure, the second semiconductor wafer having a second facing surface on which a second conductive wafer is formed. The first conductive layer is contactingly bonded to the second conductive layer to form an embedded combined conductive layer within said structure. Portions of the combined conductive layer are removed to form a plurality of spaced apart control lines that extend in a selected length or width dimension through said structure. | 01-13-2011 |
20110007538 | SYSTEMS AND METHODS OF CELL SELECTION IN CROSS-POINT ARRAY MEMORY DEVICES - The disclosure is related to three dimensional cross-point array memory devices and selecting cells within a three dimensional cross-point array memory. In a particular embodiment, three different voltages levels are applied to bit lines of the cross point array to allow for selection of a specific cell. Series of select devices may be implemented to provide a high voltage and a low voltage to specific bit lines, while a middle voltage may also be provided. In a particular embodiment, the select devices comprise Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). | 01-13-2011 |
20120080725 | VERTICAL TRANSISTOR MEMORY ARRAY - A method includes providing a semiconductor wafer having a plurality of pillar structures extending orthogonally from the semiconductor wafer. An electrically conducting interconnect element is deposited onto at least selected vertical pillar transistors and a non-volatile variable resistive memory cell is deposited onto the electrically conducting interconnect layer to form a vertical transistor memory array. | 04-05-2012 |
20120199915 | Patterning Embedded Control Lines for Vertically Stacked Semiconductor Elements - The present invention is generally directed to an apparatus with embedded (bottom side) control lines for vertically stacked semiconductor elements. In accordance with various embodiments, a first semiconductor wafer is provided with a first facing surface on which a first conductive layer is formed. The first semiconductor wafer is attached to a second semiconductor wafer to form a multi-wafer structure, the second semiconductor wafer having a second facing surface on which a second conductive wafer is formed. The first conductive layer is contactingly bonded to the second conductive layer to form an embedded combined conductive layer within said structure. Portions of the combined conductive layer are removed to form a plurality of spaced apart control lines that extend in a selected length or width dimension through said structure. | 08-09-2012 |
Jinyoung Kim, Gumi KR
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20110007039 | PLASMA DISPLAY APPARATUS - A plasma display apparatus is disclosed. The plasma display apparatus includes a plasma display panel and a driver. The plasma display panel includes a front substrate on which a plurality of scan electrodes and a plurality of sustain electrode are positioned substantially parallel to each other, a rear substrate on which a plurality of address electrodes are positioned to intersect the scan electrodes and the sustain electrodes, and a phosphor layer that is positioned between the front substrate and the rear substrate and includes a phosphor material and MgO material. The driver supplies scan signals to the plurality of scan electrodes at different times of an address period of a subfield in an active area. | 01-13-2011 |
Jinyoung Kim, Gyoungbuk-Do KR
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20100231128 | PLASMA DISPLAY PANEL - A plasma display panel is disclosed. The plasma display panel includes a front substrate on which a scan electrode and a sustain electrode are positioned, a first black layer positioned between the scan electrode and the front substrate and between the sustain electrode and the front substrate, a rear substrate on which an address electrode is positioned to intersect the scan electrode and the sustain electrode, and a barrier rib that is positioned between the front substrate and the rear substrate to partition a discharge cell. The first black layer includes cobalt (Co) material and ruthenium (Ru) material. The barrier rib including lead (Pb) equal to or less than 1,000 ppm (parts per million). | 09-16-2010 |
Jinyoung Kim, Gumi-City KR
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20090009082 | PLASMA DISPLAY PANEL - A plasma display panel is disclosed. The plasma display panel includes a front substrate, a rear substrate facing the front substrate, a barrier rib that is positioned between the front substrate and the rear substrate and partitions a discharge cell, and a phosphor layer formed inside the discharge cell. The phosphor layer includes a first phosphor layer emitting first color light, a second phosphor layer emitting second color light, and a third phosphor layer emitting third color light. The first phosphor layer includes a first pigment. A thickness of the second phosphor layer is larger than a thickness of the first phosphor layer. | 01-08-2009 |
20090009431 | PLASMA DISPLAY PANEL AND PLASMA DISPLAY APPARATUS - A plasma display panel and a plasma display apparatus are disclosed. The plasma display panel includes a front substrate on which a scan electrode and a sustain electrode are positioned parallel to each other, an upper dielectric layer positioned on the scan and sustain electrodes, a rear substrate on which an address electrode is positioned to intersect the scan and sustain electrodes, a lower dielectric layer positioned on the address electrode, a barrier rib that is positioned between the front substrate and the rear substrate and partitions a discharge cell, and a phosphor layer that is positioned inside the discharge cell and includes YVPO | 01-08-2009 |
20090009433 | PLASMA DISPLAY PANEL - A plasma display panel is disclosed. The plasma display panel includes a scan electrode and a sustain electrode positioned parallel to each other on a front substrate, an upper dielectric layer positioned on the scan electrode and the sustain electrode, a rear substrate on which an address electrode is positioned to intersect the scan electrode and the sustain electrode, a lower dielectric layer positioned on the address electrode, and a barrier rib positioned between the front substrate and the rear substrate. The barrier rib includes lead (Pb) equal to or less than 1,000 ppm (parts per million). A discharge gas is filled between the front substrate and the rear substrate and includes helium (He) of 9% to 42%. | 01-08-2009 |
Jinyoung Kim, Hwaseong-Si KR
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20120149184 | METHODS OF MANUFACTURING SELF ALIGNED BURIED CONTACT ELECTRODES FOR VERTICAL CHANNEL TRANSISTORS - A semiconductor device including vertical field effect transistors may comprise a buried insulating film stacked on a semiconductor substrate and spaced apart first and second active regions vertically penetrating the buried insulating film. The active regions and the buried insulating film are covered with an interlayer insulating film. An upper interconnection is disposed in the interlayer insulating film. A gate electrode extends from a part of the upper interconnection into the buried insulating film between the first and second active regions. A protective film pattern is disposed to cover a top surface of the upper interconnection. First and second buried contact electrodes penetrating the interlayer insulating film to be in contact with top surfaces of the first and second active regions are provided. Related manufacturing methods are also described. | 06-14-2012 |
Jinyoung Kim, Gyeongsangbuk-Do KR
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20120279302 | MEMS RESONATOR, SENSOR HAVING THE SAME AND MANUFACUTRING METHOD FOR MEMS RESONATOR - A microelectromechanical system (MEMS) resonator, a sensor having the same and a method for manufacturing the MEMS resonator are provided. The MEMS resonator includes a base substrate of the MEMS resonator, the base substrate having a recess portion recessed into one surface thereof, an oscillator mounted at the base substrate and at least partially overlapping the recess portion to be vibrated using an empty space of the recess portion, and a wire connected to the oscillator and the base substrate, respectively, to control a natural frequency of the MEMS resonator by supporting at least part of the oscillator. Accordingly, the natural frequency of the resonator can be easily controlled. | 11-08-2012 |
Jinyoung Kim, Seoul KR
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20150021764 | SEMICONDUCTOR DEVICE WITH REDISTRIBUTION LAYERS ON PARTIAL ENCAPSULATION AND NON-PHOTOSENSITIVE PASSIVATION LAYERS - A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface. | 01-22-2015 |
20160102184 | MICROPOROUS POLYIMIDE SPONGE AND METHOD FOR PRODUCING THE SAME - Disclosed is a net-shaped polyimide sponge. The polyimide sponge has a stack structure of nets. Also disclosed is a method for producing a polyimide sponge. The method enables the production of a polyimide sponge in a simple manner compared to conventional methods based on wet or dry phase inversion techniques using porogens. | 04-14-2016 |
Jinyoung Kim, Bellevue, WA US
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20150356489 | Behavior-Based Evaluation Of Crowd Worker Quality - Results, generated by human workers in response to HITs assigned to them, are evaluated based upon the behavior of the human workers in generating such results. Workers receive, together with an intelligence task to be performed, a behavior logger by which the worker's behavior is monitored while the worker performs the intelligence task. Machine learning is utilized to identify behavioral factors upon which the evaluation can be based and then to learn how to utilize such behavioral factors to evaluate the HIT results generated by workers, as well as the workers themselves. The identification of behavioral factors, and the subsequent utilization thereof, is informed by the behavior of, and corresponding results generated by, a trusted set of workers. Results evaluated to have been improperly generated can be discarded or simply downweighted. Workers evaluated to be operating improperly can be removed or retrained. | 12-10-2015 |
Jinyoung Kim, Gumi-Si KR
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20160048270 | ELECTRONIC DEVICE AND OPERATION METHOD THEREOF - An electronic device and an operation method thereof are provided. The method includes displaying information on a touch screen of the electronic device by operating a first application, displaying user interface of a second application, detecting an input through the user interface, displaying at least one recommendation object corresponding to the input among the information on the touch screen, at least partly in response to the input, receiving an input of selecting at least one of the at least one recommendation object, and displaying the recommendation object on the user interface, in response to the selecting input. | 02-18-2016 |