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Jinil
Jinil Choi, Taejeon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090203708 | NOVEL SUBSTITUTED-1-H-QUINAZOLINE-2,4-DIONE DERIVATIVES, PREPARATION METHOD THEREOF AND PHARMACEUTICAL COMPOSITION CONTAINING THE SAME - Disclosed herein are novel substituted-1H-quinazoline-2,4-dione derivatives, a preparation method thereof, and a pharmaceutical composition containing the same. The novel substituted-1H-quinazoline-2,4-dione derivatives are excellent in binding affinity and selectivity for 5-HT6 receptors over other receptors, inhibit serotonin(5-HT)-stimulated cAMP accumulation, and disrupt apomorphine(2 mg/kg, i.p.)-induced hyperactivity in rats. Thanks to these effects, the derivatives are useful in the treatment of 5-HT6 receptor-related central nervous system diseases. | 08-13-2009 |
Jinil Choi, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20100035866 | NOVEL SUBSTITUTED-1, 1-DIOXO-BENZO[1,2,4]THIADIAZIN-3ONES, PREPARATION METHOD THEREOF, AND PHARMACEUTICAL COMPOSITION CONTAINING THE SAME - The present invention relates to compounds of substituted-1,1-dioxo-benzo[1,2,4]thiadiazin-3-ones acting as a 5HT6 receptor antagonist, a preparation method thereof, and a pharmaceutical composition containing the same for treatment of the central nervous system disorders. The compounds of substituted-1,1-dioxo-benzo[1,2,4]thiadiazin-3-ones according to the present invention have excellent binding affinity for the 5HT6 receptor and excellent selectivity for the 5HT6 receptor over other receptors. Also, the compounds reverse a disruption of PPI by apomorphine and don't show rotatod deficit in mice. Therefore the compounds according to the present invention may be valuably used for treatment of a 5HT6 receptor relating disorders. | 02-11-2010 |
Jinil Choi, Yuseong-Gu Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20080275058 | N-Substituted-1H-Quinoline-2,4-Diones, Preparation Method Thereof, And Pharmaceutical Composition Containing The Same - The present invention relates to compounds of N-substituted -1H-quinoline-2,4-diones acting as a 5HT6 receptor antagonist, a preparation method thereof, and a pharmaceutical composition containing the same for treatment of the central nervous system disorders. The compounds of N-substituted-1H-quinoline-2,4-diones according to the present invention have excellent binding affinity for the 5HT6 receptor and excellent selectivity for the 5HT6 receptor over other receptors. Also, the compounds reverse a disruption of PPI by methamphetamine and don't show rotatod deficit in mice. Thereof the compounds according to the present invention may be valuably used for treatment if a 5HT6 receptor relating disorder | 11-06-2008 |
Jinil Hong, Changwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20120297814 | REFRIGERATOR AND WATER TANK ASSEMBLY FOR REFRIGERATOR - A refrigerator and a water tank assembly for supplying water to an ice maker and a dispenser installed in a door of the refrigerator are provided. The water tank assembly may have a substantially cylindrical shape, and may include a water intake port, a water discharge port, and a switching valve all provided at one surface thereof to improve water storage space and facilitate connection of water lines. | 11-29-2012 |
Jinil Lee, Seongnam-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100227457 | Method of forming phase change material layer and method of fabricating phase change memory device - A method of forming a phase change material layer and a method of fabricating a phase change memory device, the method of forming a phase change material layer including forming an amorphous germanium layer by supplying a germanium containing first source into a reaction chamber; cutting off supplying the first source after forming the amorphous germanium layer; and forming amorphous Ge | 09-09-2010 |
| 20110003477 | METHODS OF FORMING A SEMICONDUCTOR DEVICE INCLUDING A METAL SILICON NITRIDE LAYER - Provided are methods of forming a semiconductor device. The methods include providing a first precursor and a substitute gas into a reaction chamber having a substrate therein, the first precursor having a first substituent and further providing a second precursor into the reaction chamber. Either the first precursor or the second precursor includes a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor are substituted with the substitute gas, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor. | 01-06-2011 |
| 20110020998 | METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING A METAL ALLOY ELECTRODE - A semiconductor device includes an electrode having a metal silicide layer and a metal alloy layer, and a data storage element formed on the electrode. The metal silicide layer has a concave surface to correspond to a convex surface of the metal alloy layer such that the concave surface of the metal silicide layer and the convex surface of the metal alloy layer form a curved boundary. | 01-27-2011 |
| 20110124174 | METHOD OF FORMING VARIABLE RESISTANCE MEMORY DEVICE - Provided are a method of forming an electrode of a variable resistance memory device and a variable resistance semiconductor memory device using the method. The method includes: forming a heat electrode; forming a variable resistance material layer on the heat electrode; and forming a top electrode on the variable resistance material layer, wherein the heat electrode includes a nitride of a metal whose atomic radius is greater than that of titanium (Ti) and is formed through a thermal chemical vapor deposition (CVD) method without using plasma. | 05-26-2011 |
Jinil Lee, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090130797 | METHODS OF FORMING PHASE-CHANGEABLE MEMORY DEVICES USING GROWTH-ENHANCING AND GROWTH-INHIBITING LAYERS FOR PHASE-CHANGEABLE MATERIALS - Methods of forming phase-changeable memory devices include techniques to inhibit void formation in phase-changeable materials in order to increase device reliability. These techniques to inhibit void formation use an electrically insulating growth-inhibiting layer to guide the formation of a phase-changeable material region within a memory cell (e.g., PRAM cell). In particular, methods of forming an integrated circuit memory device include forming an interlayer insulating layer having an opening therein, on a substrate, and then lining sidewalls of the opening with a seed layer (i.e., growth-enhancing layer) that supports growth of a phase-changeable material thereon. An electrically insulating growth-inhibiting layer is then selectively formed on a portion of the interlayer insulating layer surrounding the opening. The formation of the growth-inhibiting layer is followed by a step to selectively grow a phase-changeable material region in the opening, but not on the growth-inhibiting layer. | 05-21-2009 |
| 20100055829 | APPARATUS AND METHODS FOR FORMING PHASE CHANGE LAYER AND METHOD OF MANUFACTURING PHASE CHANGE MEMORY DEVICE - Provided are apparatus and methods for forming phase change layers, and methods of manufacturing a phase change memory device. A source material is supplied to a reaction chamber, and purges from the chamber. A pressure of the chamber is varied according to the supply of the source material and the purge of the source material. | 03-04-2010 |
Jinil Park, Seongnam-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20120137993 | APPARATUS OF COOLING SYSTEM FOR VEHICLE AND CONTROLLING METHOD USING THE SAME - A cooling system of a vehicle may include a high and low temperature radiators that cool a high and low temperature coolants respectively circulating an engine and passing a water cooled intercooler and a low exhaust gas recirculation cooler of a turbo charger, a cooling fan that blows air to the high temperature radiator and the low temperature radiator, a high temperature coolant pump that pumps the high temperature coolant, a low temperature coolant pump that pumps the low temperature coolant, and a control portion that controls the high temperature coolant pump, the low temperature coolant pump, and the cooling fan according to driving conditions of the vehicle and environmental conditions. A controlling method may include detecting driving conditions of the vehicle and environmental conditions, setting an operating target for the cooling system and/or a lubrication system, and determining operating conditions for the cooling system and/or the lubrication system. | 06-07-2012 |