Patent application number | Description | Published |
20090051008 | Semiconductor device having a resistor and methods of forming the same - In a semiconductor device and a method of making the same, the semiconductor device comprises a substrate including a first region and a second region. At least one first gate structure is on the substrate in the first region, the at least one first gate structure including a first gate insulating layer and a first gate electrode layer on the first gate insulating layer. At least one isolating structure is in the substrate in the second region, a top surface of the isolating structure being lower in height than a top surface of the substrate. At least one resistor pattern is on the at least one isolating structure. | 02-26-2009 |
20110062508 | SEMICONDUCTOR DEVICE INCLUDING RESISTOR AND METHOD OF FABRICATING THE SAME - Embodiments of a semiconductor device including a resistor and a method of fabricating the same are provided. The semiconductor device includes a mold pattern disposed on a semiconductor substrate to define a trench, a resistance pattern including a body region and first and second contact regions, wherein the body region covers the bottom and sidewalls of the trench, the first and second contact regions extend from the extending from the body region over upper surfaces of the mold pattern, respectively; and first and second lines contacting the first and second contact regions, respectively. | 03-17-2011 |
20120126421 | Semiconductor Devices and Methods of Forming the Same - A method of forming a semiconductor device may include forming a contact mold layer on a substrate; forming an interconnection mold layer on the contact mold layer that includes a material having an etching selectivity with respect to the contact mold layer; forming grooves in the interconnection mold layer that extend in a first direction and expose the contact mold layer; forming holes in the contact mold layer connected to the grooves by etching a part of the contact mold layer exposed by the groove; and forming contact portions in the holes and interconnections in the groove. A diffusion coefficient of mobile atoms in the contact mold layer is greater than a diffusion coefficient of mobile atoms in a nitride. | 05-24-2012 |
20120168871 | SEMICONDUCTOR DEVICE HAVING A RESISTOR AND METHODS OF FORMING THE SAME - In a semiconductor device and a method of making the same, the semiconductor device comprises a substrate including a first region and a second region. At least one first gate structure is on the substrate in the first region, the at least one first gate structure including a first gate insulating layer and a first gate electrode layer on the first gate insulating layer. At least one isolating structure is in the substrate in the second region, a top surface of the isolating structure being lower in height than a top surface of the substrate. At least one resistor pattern is on the at least one isolating structure. | 07-05-2012 |
20130187233 | SEMICONDUCTOR MEMORY DEVICES - A semiconductor memory device may include: a well impurity layer including a cell array region and a well drive region adjacent to the cell array region, the well impurity layer having a first conductivity type; at least one word line on the well impurity layer; at least one bit line crossing the at least one word line on the well impurity layer of the cell array region, the at least one bit line connected to a drain region in the well impurity layer, and the drain region having a second conductivity type; and a well drive line crossing the at least one word line on the well impurity layer of the well drive region, the well drive line connected to the well impurity layer of the first conductivity type. | 07-25-2013 |
20140021524 | NON-VOLATILE MEMORY DEVICES HAVING AIR GAPS AND METHODS OF MANUFACTURING THE SAME - Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate structures disposed on the substrate. The active portions are spaced apart from each other in a first direction and extend in a second direction perpendicular to the first direction. The gate structures are spaced apart from each other in the second direction and extend in the first direction. Each of the device isolation patterns includes a first air gap, and each of a top surface and a bottom surface of the first air gap has a wave-shape in a cross-sectional view taken along the second direction. | 01-23-2014 |
20140080278 | SEMICONDUCTOR DEVICE HAVING A RESISTOR AND METHODS OF FORMING THE SAME - In a semiconductor device and a method of making the same, the semiconductor device comprises a substrate including a first region and a second region. At least one first gate structure is on the substrate in the first region, the at least one first gate structure including a first gate insulating layer and a first gate electrode layer on the first gate insulating layer. At least one isolating structure is in the substrate in the second region, a top surface of the isolating structure being lower in height than a top surface of the substrate. At least one resistor pattern is on the at least one isolating structure. | 03-20-2014 |
20140151777 | Semiconductor Memory Devices and Methods of Fabricating the Same - Provided are a semiconductor memory device and a method of fabricating the same, the semiconductor memory device may include a semiconductor substrate with a first trench defining active regions in a first region and a second trench provided in a second region around the first region, a gate electrode provided on the first region to cross the active regions, a charge storing pattern disposed between the gate electrode and the active regions, a blocking insulating layer provided between the gate electrode and the charge storing pattern and extending over the first trench to define a first air gap in the first trench, and an insulating pattern provided spaced apart from a bottom surface of the second trench to define a second air gap in the second trench. | 06-05-2014 |
20140154885 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING DOUBLE PATTERNING TECHNOLOGY - Methods of fabricating semiconductor devices and semiconductor devices fabricated thereby are provided. Two photolithography processes and two spacer processes are performed to provide final patterns that have a pitch that is smaller than a limitation of photolithography process. Furthermore, since initial patterns are formed to have line and pad portions simultaneously by performing a first photolithography process, there is no necessity to perform an additional photolithography process for forming the pad portion. | 06-05-2014 |
20140322911 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - A method of forming a semiconductor device may include forming a contact mold layer on a substrate; forming an interconnection mold layer on the contact mold layer that includes a material having an etching selectivity with respect to the contact mold layer; forming grooves in the interconnection mold layer that extend in a first direction and expose the contact mold layer; forming holes in the contact mold layer connected to the grooves by etching a part of the contact mold layer exposed by the groove; and forming contact portions in the holes and interconnections in the groove. A diffusion coefficient of mobile atoms in the contact mold layer is greater than a diffusion coefficient of mobile atoms in a nitride. | 10-30-2014 |
20140332894 | NON-VOLATILE MEMORY DEVICES HAVING AIR GAPS AND METHODS OF MANUFACTURING THE SAME - Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate structures disposed on the substrate. The active portions are spaced apart from each other in a first direction and extend in a second direction perpendicular to the first direction. The gate structures are spaced apart from each other in the second direction and extend in the first direction. Each of the device isolation patterns includes a first air gap, and each of a top surface and a bottom surface of the first air gap has a wave-shape in a cross-sectional view taken along the second direction. | 11-13-2014 |
20150054176 | Methods of Fabricating Semiconductor Devices and Devices Fabricated Thereby - Methods of fabricating semiconductor devices are provided including performing two photolithography processes and two spacer processes such that patterns are formed to have a pitch that is smaller than a limitation of photolithography process. Furthermore, line and pad portions are simultaneously defined by performing the photolithography process once and, thus, there is no necessity to perform an additional photolithography process for forming the pad portion. Related devices are also provided. | 02-26-2015 |