| Patent application number | Description | Published |
| 20090051057 | Diffuser For Aeration - Disclosed is a diffuser installation structure capable of improving uniformity of air bubbles discharged from air bubble discharge holes, restricting the formation of dead zone air bubble discharge holes, and having the tolerance against design deviation. In the installation structure for a diffuser comprising at least one air feeding port and an air bubble discharge wall having a plurality of air bubble discharge holes, the air bubble discharge wall is inclined upward in the direction of increasing distance relative to the air feeding port. | 02-26-2009 |
| 20090314706 | Cartridge Module of Hollow Fiber Membranes - Disclosed is a cartridge module of hollow fiber membranes, which can be easily mounted on and dismounted from a module mounting frame, and allow a process for removal of the inter-membrane clogging to be performed in an effective and simple manner. The cartridge module is mainly characterized in that a water collecting header has an opened first collected water outlet, which is located at the upper portion of the front surface of the water collecting header and can be opened and closed; and a closed second collected water outlet, which is located at the lower portion of the front surface of the water collecting header and can be opened and closed. The inter-membrane clogging can be very simply removed by dismounting, turning upside down, and remounting the cartridge module. | 12-24-2009 |
| 20110101548 | DIFFUSER FOR AERATION - Disclosed is a diffuser installation structure capable of improving uniformity of air bubbles discharged from air bubble discharge holes, restricting the formation of dead zone air bubble discharge holes, and having the tolerance against design deviation. In the installation structure for a diffuser comprising at least one air feeding port and an air bubble discharge wall having a plurality of air bubble discharge holes, the air bubble discharge wall is inclined upward in the direction of increasing distance relative to the air feeding port. | 05-05-2011 |
| 20110227215 | ELECTRONIC DEVICE, PACKAGE INCLUDING THE SAME AND METHOD OF FABRICATING THE PACKAGE - An electronic device, a package including the same, and a method of fabricating the package, the electronic device including a substrate having an operation structure therein; a first passivation layer on a first side of the substrate; and first conductive patterns on a second side of the substrate, the first conductive patterns being electrically connected to the operation structure, wherein the first passivation layer has a higher flexibility than the substrate when the substrate and the first passivation layer are bent. | 09-22-2011 |
| Patent application number | Description | Published |
| 20100097859 | Nonvolatile memory device - A nonvolatile memory device having a three-dimensional structure includes first word line stacks in which first word lines are stacked; second word line stacks in which second word lines parallel to the first word lines are stacked; first connection lines connecting the first word lines; and second connection lines connecting the second word lines. Each of the first connection lines connects the first word lines located at a common layer, each of the second connection lines connects the second word lines located at a common layer and at least one second word line stack is disposed between a pair of the first word line stacks. | 04-22-2010 |
| 20100133606 | Three-dimensional semiconductor memory device - A three-dimensional semiconductor memory device includes word lines and gate interlayer insulation layers that are alternatively stacked on a semiconductor substrate while extending in a horizontal direction, a vertical channel layer that faces the word lines and extends upwardly from the semiconductor substrate, and a channel pad that extends from the vertical channel layer and is disposed on an uppermost gate interlayer insulation layer of the gate interlayer insulation layers. | 06-03-2010 |
| 20100207184 | Semiconductor devices and methods of forming the same - A semiconductor device includes insulating patterns and gate patterns alternately stacked on a substrate; an active pattern on the substrate, which extends upward along sidewalls of the insulating patterns and the gate patterns; data storage patterns interposed between the gate patterns and the active pattern; and a source/drain region disposed in the active pattern between a pair of gate patterns adjacent to each other. | 08-19-2010 |
| 20100240205 | METHODS OF FABRICATING THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICES USING EXPANSIONS - Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers. | 09-23-2010 |
| 20100254191 | SEMICONDUCTOR MEMORY DEVICE COMPRISING THREE-DIMENSIONAL MEMORY CELL ARRAY - A semiconductor memory device includes a substantially planar substrate; a memory string vertical to the substrate, the memory string comprising a plurality of storage cells; and a plurality of elongated word lines, each word line including a first portion substantially parallel to the substrate and connected to the memory string and a second portion substantially inclined relative to the substrate and extending above the substrate, wherein a first group of the plurality of word lines are electrically connected to first conductive lines disposed at a first side of the memory string, and a second group of the plurality of word lines are electrically connected to second conductive lines disposed at a second side of the memory string. | 10-07-2010 |
| 20110076819 | Three-dimensional semiconductor memory device and method of fabricating the same - A method of fabricating a semiconductor memory device includes alternately and repeatedly stacking sacrificial layers and insulating layers on a substrate, forming an active pattern penetrating the sacrificial layers and the insulating layers, continuously patterning the insulating layers and the sacrificial layers to form a trench, removing the sacrificial layers exposed in the trench to form recess regions exposing a sidewall of the active pattern, forming an information storage layer on the substrate, forming a gate conductive layer on the information storage layer, such that the gate conductive layer fills the recess regions and defines an empty region in the trench, the empty region being surrounded by the gate conductive layer, and performing an isotropic etch process with respect to the gate conductive layer to form gate electrodes in the recess regions, such that the gate electrodes are separated from each other. | 03-31-2011 |
| 20110239937 | APPARATUS AND METHOD FOR TREATING SUBSTRATE - A substrate treating apparatus and method include a load lock chamber providing a space where a process is performed. While a boat supporting the substrate is positioned in the load lock chamber, a cooling member cools an inside of the load lock chamber at different temperatures according to area or region in a vertical direction of the load lock chamber. | 10-06-2011 |
| 20110305083 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device having a three-dimensional structure includes first word line stacks in which first word lines are stacked; second word line stacks in which second word lines parallel to the first word lines are stacked; first connection lines connecting the first word lines; and second connection lines connecting the second word lines. Each of the first connection lines connects the first word lines located at a common layer, each of the second connection lines connects the second word lines located at a common layer and at least one second word line stack is disposed between a pair of the first word line stacks. | 12-15-2011 |