Patent application number | Description | Published |
20140355183 | METHOD OF MANUFACTURING MULTI-LAYER THIN FILM, MEMBER INCLUDING THE SAME AND ELECTRONIC PRODUCT INCLUDING THE SAME - A method of manufacturing a multi-layer thin film is provided. The method includes modifying a surface of a plastic object by plasma treatment, depositing at least one hardness-enhancing layer on the plastic object, and depositing a color layer on the hardness-enhancing layer. The method may further include depositing a protective layer on the color layer. | 12-04-2014 |
20140355184 | METHOD OF MANUFACTURING MULTI-LAYER THIN FILM, MEMBER INCLUDING THE SAME AND ELECTRONIC PRODUCT INCLUDING THE SAME - Disclosed herein is a method of forming a multilayer thin film by depositing target particles, detached from a target by plasma discharge of inert gas, on a metal object using a multilayer thin film deposition apparatus and a multilayer thin film formed by the method. More specifically, a sputtering deposition apparatus is used as the multilayer thin film deposition apparatus. The method includes coating a metal object with a coating layer, depositing at least one hardness-enhancing layer on the coating layer, and depositing a color layer on the at least one hardness-enhancing layer. | 12-04-2014 |
20150123518 | MEMBER INCLUDING MULTILAYER THIN FILM, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC PRODUCT INCLUDING THE SAME - A plastic member, on which a metal layer is formed on a surface of a plastic object, a method of manufacturing the same, and an electronic product including the same are provided. The method of manufacturing a multilayer thin film includes modifying a surface of a plastic object using a plasma treatment, depositing a reflective metal layer on the surface of the plastic object, and depositing a transparent ceramic layer on the reflective metal layer. | 05-07-2015 |
20150125640 | MULTILAYER THIN FILM MANUFACTURING METHOD AND ELECTRONIC PRODUCT - A manufacturing method that forms a multilayer thin film on the inner surface of a housing forming a transparent appearance of an electronic product to provide a deep metal texture and an electronic product having a metal texture provided at the inner surface of the housing. The multilayer thin film manufacturing method includes reforming an inner surface of a housing having an outer surface and the inner surface through plasma processing, depositing at least one hardness reinforcement layer on the inner surface, and depositing a color layer on the hardness reinforcement layer. | 05-07-2015 |
Patent application number | Description | Published |
20140008608 | SEMICONDUCTOR LIGHT-EMITTING DEVICES INCLUDING CONTACT LAYERS TO FORM REFLECTIVE ELECTRODES - A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode. | 01-09-2014 |
20140014897 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH DOPED BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, a semiconductor light emitting device including a doped buffer layer includes a substrate and a buffer layer on the substrate. The doping layer may include aluminum nitride (AlN) and the buffer layer may include a doping layer. An n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer may be on the buffer layer. An n-side electrode may be on the n-type nitride semiconductor layer. A p-side electrode may be on the p-type nitride semiconductor layer. | 01-16-2014 |
20140042454 | SEMICONDUCTOR LIGHT EMTTING DEVICE - A semiconductor light emitting device includes a substrate, a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride, a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride, a capping layer disposed on the composition grading layer, and a cladding layer disposed on the capping layer. A composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner. | 02-13-2014 |
20140183546 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer. | 07-03-2014 |
20150194571 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions. | 07-09-2015 |
20150236202 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer. | 08-20-2015 |
20160099376 | METHOD OF MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity. | 04-07-2016 |
20160126419 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures. | 05-05-2016 |
Patent application number | Description | Published |
20140291588 | MIXED CATHODE ACTIVE MATERIAL HAVING IMPROVED POWER CHARACTERISTICS AND SAFETY, AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME - Provided are a mixed cathode active material having improved power characteristics and safety, and a lithium secondary battery including the same. More particularly, the present invention relates to a mixed cathode active material which may assist power in a low SOC range to widen an available state of charge (SOC) range and may simultaneously provide improved safety by blending substituted LFP, in which operating voltage is adjusted by substituting a portion of iron (Fe) with other elements such as titanium (Ti), in order to prevent a rapid increase in resistance of manganese (Mn)-rich having high capacity but low operating voltage in a low SOC range (e.g., a SOC range of 10% to 40%), and a lithium secondary battery including the mixed cathode active material. | 10-02-2014 |
20150349308 | Lithium Secondary Battery - Provided is a lithium secondary battery in which a separator is not provided. The lithium secondary battery includes a cathode in which a cathode active material layer is formed on a cathode current collector; an anode in which an anode active material layer is formed on an anode current collector; and an inorganic layer positioned between the cathode and the anode facing each other and containing inorganic particles and a binder. The inorganic layer is in a state in which the inorganic layer is bound to both of the cathode active material layer and the anode active material layer. | 12-03-2015 |
20150349327 | LITHIUM SECONDARY BATTERY - A lithium secondary battery includes a positive electrode, a negative electrode, and a non-aqueous electrolyte, and more particularly, the positive electrode includes a positive active material including lithium-metal oxide in which at least one metal has a continuous concentration gradient from the center to the surface, and the negative electrode includes a negative active material including graphite having an average lattice distance (d | 12-03-2015 |
20150349381 | LITHIUM SECONDARY BATTERY - A lithium secondary battery includes a positive electrode, a negative electrode, and a non-aqueous electrolyte, and more particularly, the positive electrode includes a positive active material including lithium-metal oxide in which at least one metal has the continuous concentration gradient from the center to the surface, and the non-aqueous electrolyte includes a lithium salt, a multinitrile compound, and an organic solvent, thereby improving storage characteristics at a high voltage and lifetime characteristics. | 12-03-2015 |
Patent application number | Description | Published |
20110255047 | DISPLAY APPARATUS INCLUDING TEMPERATURE COMPENSATION UNIT, DISPLAY MODULE APPLIED THEREIN, AND METHOD FOR CONTROLLING TEMPERATURE OF DISPLAY MODULE - A display apparatus, a display module applied to the display apparatus, and a method for controlling a temperature of the display module are provided. The display apparatus includes a temperature compensation unit for compensating for the temperature of a liquid crystal panel. | 10-20-2011 |
20120148699 | INJECTION MOLD - An injection mold includes a first mold part provided with a first mold surface and a second mold part provided with a second mold surface to form a cavity together with the first mold surface. Cooling channels along which a cooling fluid flows are provided in at least one of the first mold part and the second mold part, and a heat generating layer which receives power and then generates heat is disposed on the inner surfaces of the cooling channels and serves as a heater. | 06-14-2012 |
20120294976 | INJECTION MOLDING APPARATUS - An injection molding apparatus is provided. The injection molding apparatus includes a mold, a plate heater mounted to the mold to heat the mold, and a cooling passage provided above or below the plate heater. | 11-22-2012 |
20130162506 | DISPLAY MODULE AND DISPLAY APPARATUS HAVING THE SAME - A display module including a backlight to more effectively dissipate heat generated at light emitting diodes (LEDs) and heat dissipation units to effectively dissipate heat generated at driver chips and prevent movement of the driver chips by attaching porous fillers to the heat dissipation units, and a display apparatus having the same are provided. The display module includes a display panel, a backlight disposed on a rear side of the display panel and including a plurality of printed circuit boards, a bottom chassis adapted to accommodate the backlight unit and provided with a plurality of seating grooves, a driving printed circuit board, a plurality of flexible printed circuit films which electrically connect the display panel and the driving printed circuit board, at least one heat dissipater disposed on an opposite surface of a corresponding one of the flexible printed circuit and provided with a porous filler. | 06-27-2013 |
20160123703 | APPARATUS AND METHOD OF GENERATING MOMENTUM USING SUPERCONDUCTING COILS - The present invention relates to an apparatus of generating momentum which drives an object. The present invention provides a momentum generating apparatus in which a pair of high temperature superconducting coils which are wound in different directions and have different superconducting properties are arranged in parallel and the same current flows in the pair of coils to be in a stable state where magnetic fields generated in the coils are cancelled and an asymmetric current is suddenly applied to the pair of coils through a switching operation to generate a magnetic field and an eddy current is induced in a plate due to the generated magnetic field and the plate is floated using a repulsive force between the magnetic field generated in the plate due to the eddy current and the magnetic field generated in the pair of coils, to instantaneously generate force using a small amount of superconducting coils. | 05-05-2016 |