| Patent application number | Description | Published |
|---|
| 20090147488 | PRINTED CIRCUIT BOARD HAVING CHIP PACKAGE MOUNTED THEREON AND METHOD OF FABRICATING SAME - Disclosed is a printed circuit board (PCB) and a method of fabricating the same. A contact portion is formed on an internal layer of the multi-layered PCB. A groove is formed so as to expose the contact portion of the internal layer. A chip package is mounted on the PCB while being flip-chip bonded to the exposed contact portion of the internal layer. | 06-11-2009 |
| 20090152233 | PRINTED CIRCUIT BOARD HAVING CHIP PACKAGE MOUNTED THEREON AND METHOD OF FABRICATING SAME - Disclosed is a printed circuit board (PCB) and a method of fabricating the same. A contact portion is formed on an internal layer of the multi-layered PCB. A groove is formed so as to expose the contact portion of the internal layer. A chip package is mounted on the PCB while being flip-chip bonded to the exposed contact portion of the internal layer. | 06-18-2009 |
| 20090301766 | Printed circuit board including electronic component embedded therein and method of manufacturing the same - Disclosed herein is a printed circuit board including an electronic component embedded therein, as the electronic component is supported on the metal layer of core substrate, thus supporting and radiation performances are improved, production costs are reduced, and the manufacturing process is simplified. | 12-10-2009 |
| 20110048780 | METHOD OF PROCESSING CAVITY OF CORE SUBSTRATE - A method of processing a cavity of a core substrate is disclosed. The method of processing a cavity of a core substrate in accordance with an embodiment of the present invention can include: forming a first processing area on one surface of a core substrate, the first processing area being demarcated by a circuit pattern; forming a second processing area on the other surface of the core substrate, the second processing area being demarcated by a circuit pattern; and processing a cavity by removing the entire first processing area from the one surface of the core substrate. | 03-03-2011 |
| Patent application number | Description | Published |
|---|
| 20080200678 | Metallic Compound and Organic Electroluminescence Device Comprising the Same - The present invention relates to a light-emitting transition metal compound represented by the Chemical Formula 1 and Chemical Formula 2 and an organic electroluminescence device including the same. | 08-21-2008 |
| 20080269484 | Metallic Compound and Organic Electroluminescence Device Comprising the Same - The present invention relates to a light emitting metallic compound of Chemical Formula 1 and an organic electroluminescence device including the compound. In the Chemical Formula 1, M is selected from Ir, Pt, Rh, Re, and Os, and m is 2, provided that m is 1 when M is Pt. | 10-30-2008 |
| 20080275239 | Metallic Compound and Organic Electroluminescence Device Comprising the Same - The present invention relates to a light emitting transition metal compound represented by the Chemical Formula 1 and Chemical Formula 2 and an organic electroluminescence device including the same. In the above Chemical Formulae 1 and 2, M is Ir, Pt, Rh, Re, Os, or the like, m is 2 or 3 and n is 0 or 1, where the sum of m and n is 3, provided that the sum of m and n is 2 when M is Pt, X and Z are the same or different and may be N or P, and Y is O, S, or Se. | 11-06-2008 |
| 20090306395 | METALLIC COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE COMPRISING THE SAME - The present invention relates to a light emitting transition metal compound of Chemical Formula 1 and an organic electroluminescence device including the compound. | 12-10-2009 |
| 20090326236 | METALLIC COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE COMPRISING THE SAME - The present invention relates to a light emitting binuclear transition metal compound of Chemical Formulae 1 and 2, and an organic electroluminescence device including the compound. In the Chemical Formulae 1 and 2, M is selected from Ir, Pt, Rh, Re, and Os, and m is 2, provided that the m is 1 when M is Pt. | 12-31-2009 |
| 20100109065 | THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICES HAVING SUB-DIVIDED ACTIVE BARS AND METHODS OF MANUFACTURING SUCH DEVICES - Nonvolatile memory devices are provided and methods of manufacturing such devices. In the method, conductive layers and insulating layers are alternatingly stacked on a substrate. A first sub-active bar is formed which penetrates a first subset of the conductive layers and a first subset of the insulating layers. The first sub-active bar is electrically connected with the substrate. A second sub-active bar is formed which penetrates a second subset of the conductive layers and a second subset of the insulating layers. The second sub-active bar is electrically connected to the first sub-active bar. A width of a bottom portion of the second sub-active bar is less than a width of a top portion of the second sub-active bar. | 05-06-2010 |
| 20100248439 | Method of fabricating non-volatile memory device having vertical structure - A method of fabricating a non-volatile memory device according to an example embodiment may include etching a plurality of sacrificial films and insulation films to form a plurality of first openings that expose a plurality of first portions of a semiconductor substrate. A plurality of channel layers may be formed in the plurality of first openings so as to coat the plurality of first portions of the semiconductor substrate and side surfaces of the plurality of first openings. A plurality of insulation pillars may be formed on the plurality of channel layers so as to fill the plurality of first openings. The plurality of sacrificial films and insulation films may be further etched to form a plurality of second openings that expose a plurality of second portions of the semiconductor substrate. A plurality of side openings may be formed by removing the plurality of sacrificial films. A plurality of gate dielectric films may be formed on surfaces of the plurality of side openings. A plurality of gate electrodes may be formed on the plurality of gate dielectric films so as to fill the plurality of side openings. | 09-30-2010 |
| 20110184170 | METALLIC COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE COMPRISING THE SAME - The present invention relates to an organic electroluminescence device containing a light emitting metallic compound of Chemical Formula 1. In the Chemical Formula 1, M is selected from Ir, Pt, Rh, Re, and Os, and m is 2, provided that m is 1 when M is Pt. | 07-28-2011 |
