| Patent application number | Description | Published |
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| 20100178729 | Resistance-Type Random Access Memory Device Having Three-Dimensional Bit Line and Word Line Patterning - Provided is a resistance random access memory device and a method of fabricating, the same. The method includes forming a bit-line stack in which a plurality of local bit-lines are vertically stacked on a substrate, forming a word-line including a plurality of local word-lines that extend in a vertical direction toward a side of the bit-line stack and a connection line that extends in a horizontal direction to connect the plurality of local word-lines with one another, and forming a resistance memory thin film between the bit-line stack and the word-line. The present inventive concept can realize a highly dense memory array with 3D cross-point architecture by simplified processes. | 07-15-2010 |
| 20100208508 | Multi-level nonvolatile memory devices using variable resistive elements - Multi-level nonvolatile memory devices using variable resistive elements, the multi-level nonvolatile memory devices including a word line, a bit line, and a multi-level memory cell coupled between the word line and the bit line, the multi-level memory cell having first resistance level and a second resistance level higher than the first resistance level when the first and second write biases having the same polarity are applied thereto, and a third resistance level and a fourth resistance level ranging between the first and second resistance levels, when third and fourth write biases having different polarities from each other are applied thereto. | 08-19-2010 |
| 20110032747 | VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF PROGRAMMING VARIABLE RESISTANCE MEMORY DEVICES - A variable resistance memory device includes a variable resistance memory cell, and a by-pass circuit configured to electrically by-pass a programming pulse supplied to the variable resistance memory cell after a resistive state of the variable resistance memory cell has changed in response to the programming pulse. | 02-10-2011 |
| Patent application number | Description | Published |
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| 20080211036 | Bipolar Resistive Memory Device Having Tunneling Layer - A nonvolatile memory device includes a semiconductor substrate, a first electrode on the semiconductor substrate, a resistive layer on the first electrode, a second electrode on the resistive layer and at least one tunneling layer interposed between the resistive layer and the first electrode and/or the second electrode. The resistive layer and the tunneling layer may support transition between first and second resistance states responsive to first and second voltages applied across the first and second electrodes. The first and second voltages may have opposite polarities. | 09-04-2008 |
| 20090212273 | Semiconductor Devices Having Resistive Memory Elements - Provided is a semiconductor device including a resistive memory element. The semiconductor device includes a substrate and the resistive memory element disposed on the substrate. The resistive memory element has resistance states of a plurality of levels according to generation and dissipation of at least one platinum bridge therein. | 08-27-2009 |
| 20090230512 | Nonvolatile Memory Devices that Use Resistance Materials and Internal Electrodes, and Related Methods and Processing Systems - A nonvolatile memory device, a method of fabricating the nonvolatile memory device and a processing system including the nonvolatile memory device. The nonvolatile memory device may include a plurality of internal electrodes that extend in a direction substantially perpendicular to a face of a substrate, a plurality of first external electrodes that extend substantially in parallel with the face of the substrate, and a plurality of second external electrodes that also extend substantially in parallel with the face of the substrate. Each first external electrode is on a first side of a respective one of the internal electrodes, and each second external electrode is on a second side of a respective one of the internal electrodes. These devices also include a plurality of variable resistors that contact the internal electrodes, the first external electrodes and the second external electrodes. | 09-17-2009 |
