| Patent application number | Description | Published |
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| 20080254969 | Method of Preparing Substrates - Molecular Sieve Layers Complex Using Ultrasound and Apparatuses Used Therein - The present invention relates to a method for preparing substrate-molecular sieve layer complex by vising ultra-sound and apparatuses used therein, more particularly to a method for preparing substrate-molecular sieve layer complex by combining substrate, coupling compound and molecular sieve particle, wherein covalent, ionic, coordinate or hydrogen bond between a substrate and a coupling compound; molecular sieve particle and coupling compound; coupling compounds; coupling compound and intermediate coupling compound is induced by using 15 KHz-100 MHz of ultrasound instead of simple reflux to combine substrate and molecular sieve particles by various processes, further to reduce time and energy, to retain high binding velocity, binding strength, binding intensity and density remarkably, to attach molecular sieve particle uniformly onto all substrates combined with coupling compound selectively, even though substrate with coupling compound and substrate without coupling compound exist together; and apparatuses installed therein, which can improve to produce substrate-molecular sieve layer complex ina large scale. | 10-16-2008 |
| 20090101492 | METHOD FOR PREPARING COMPOSITES OF ZEOLITE-FIBER SUBSTRATE - A method for preparing a composite of zeolite-fiber substrate includes the steps of reacting a fiber substrate or a zeolite with a linking compound to form an intermediate of linking compound-fiber substrate or zeolite-linking compound, and preparing the composite of zeolite-linking compound-fiber substrate by linking the intermediate of linking compound-fiber substrate to the fiber substrate or linking the intermediate of zeolite-linking compound to the zeolite, in which the linking is induced by sonication. | 04-23-2009 |
| 20090181531 | METHODS OF MANUFACTURING NON-VOLATILE MEMORY DEVICES HAVING INSULATING LAYERS TREATED USING NEUTRAL BEAM IRRADIATION - Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer. | 07-16-2009 |
| 20090246122 | Methods for preparing composites of substrate-molecular sieve - The present invention relates to a method for preparing composites of substrate-molecular sieve, which comprises applying a physical pressure to molecular sieve crystals against a substrate to form a chemical bond between the molecular sieve crystal and the substrate. The present invention requiring no solvents, reactors and other equipments enables molecular sieve crystals to be stably attached to the surface of substrates through various chemical bonds, particularly ionic present invention ensures the synthesis of substrate-molecular sieve composites with enhanced attachment rate, degree of lateral close packing (DCP) and attachment strength in more time-saving method works well for molecular sieve crystals with lager sizes (e.g., more than 3 μm) with no generation of parasitic crystals. Furthermore, the present invention shows excellent applicability to large substrates, enabling the mass production of substrate-molecular sieve composites. | 10-01-2009 |
| 20100180263 | APPARATUS AND METHOD FOR DETECTING SOFTWARE ERROR - An apparatus and method for detecting software error are provided. Trace files are respectively generated by a target machine and a functional simulator that imitates the target machine and performs the same operation as the target machine. Each of the trace files may include at least one of a data-flow-type trace including execution information about one or more instructions and a control-flow-type trace representing information about a part in which a change in address indicating the position of an instruction is a predetermined threshold value or more when the instruction is executed. By comparing the generated trace files, software error may be detected. | 07-15-2010 |
| 20100293910 | Single crystal silicon carbaide nanowire, method of preparation thereof, and filter comprising the same - Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime. | 11-25-2010 |
| 20110202749 | INSTRUCTION COMPRESSING APPARATUS AND METHOD - An instruction compressing apparatus and method for a parallel processing computer such as a very long instruction word (VLIW) computer, are provided. The instruction compressing apparatus includes a bundle code generating unit, an instruction compressing unit, and an instruction converting unit. The bundle code generating unit may generate a bundle code in response to an input of instructions to be compressed. The bundle code may indicate whether a current instruction group is terminated, and also whether an instruction group following the current instruction group is a no-operation (NOP) instruction group. The instruction compressing unit may remove a NOP instruction and/or a NOP instruction group from the input instructions according to the generated bundle code. The instruction converting unit may include the generated bundle code in the remaining instructions which have not been removed by the instruction compressing unit. | 08-18-2011 |
| 20110238963 | RECONFIGURABLE ARRAY AND METHOD OF CONTROLLING THE RECONFIGURABLE ARRAY - A reconfigurable array is provided. The reconfigurable array includes a Very Long Instruction Word (VLIW) mode and a Coarse-Grained Array (CGA) mode. When the VLIW mode is converted to the CGA mode, instead of sharing a central register file between the VLIW mode and the CGA mode, live data to be used in the CGA mode is copied from the central register file to local register files. | 09-29-2011 |
| 20110252179 | APPARATUS AND METHOD FOR ROUTING DATA AMONG MULTIPLE CORES - An apparatus and method for routing data among multicores that is capable of reconfiguring the connection among the multicores are provided. The apparatus includes a configuration information generating unit and at least one switching unit. The configuration information generating unit is configured to generate configuration information that indicates a local network connection among the multicores based on a program counter received from each of the multicores. The at least one switching unit is configured to change a data transfer path among the multicores based on the configuration information. | 10-13-2011 |
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| 20100166134 | Top Nozzle Having On-Off Type Of Hold-Down Spring In Nuclear Fuel Assembly - The present invention relates to a top nozzle having on-off type of hold-down springs for a nuclear fuel assembly that has a two-stage elastic section such that a pushing force against the axial movement of the nuclear fuel assembly under normal conditions is optimized and at the same time a suppressing force against a drastic uplifting force of the nuclear fuel assembly under transient conditions is strengthened, and that lowers the elastic coefficients of the springs operating under normal conditions more than those of existing coil springs, thereby providing an optimal pushing force against the nuclear fuel assembly. | 07-01-2010 |
| 20110303290 | METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT SURFACE QUALITY USING INERT GAS BLOWING - The present disclosure provides a method and apparatus for manufacturing a silicon substrate using inert gas blowing during continuous casting to provide excellent productivity and surface quality. The apparatus includes a raw silicon feeder through which raw silicon is fed, a silicon melting unit disposed under the raw silicon feeder and melting the raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer unit transferring the silicon melt tapped from the molten silicon storage unit, and a cooling unit cooling the silicon melt transferred by the transfer unit. Here, the cooling unit cools the silicon melt by blowing inert gas at a rate of 0.1˜2.5 Nm | 12-15-2011 |
| 20110305891 | METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT PRODUCTIVITY AND SURFACE QUALITY USING CONTINUOUS CASTING - The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, and a method for manufacturing a silicon substrate using the same. The apparatus includes a raw silicon feeder, a silicon melting unit melting raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer board transferring the tapped silicon melt, and a silicon substrate forming unit cooling the silicon melt transferred by the transfer board to form a silicon substrate. The molten silicon stored in the molten silicon storage unit has a surface temperature of 1300˜1500° C., the transfer board is preheated to 700˜1400° C., and a transfer time of the silicon substrate after tapping the molten silicon from the molten silicon storage unit is 0.5˜3.5 seconds. | 12-15-2011 |
