| Patent application number | Description | Published |
|---|
| 20090057783 | Semiconductor device and method of fabricating metal gate of the same - Provided is a semiconductor device and a method of fabricating a metal gate in the semiconductor device. The semiconductor device includes a metal gate formed on a gate insulating film, the metal gate is formed of a mixture of a metal nitride and a metal carbide, and a work function of the metal gate is determined according to ratios of the metal nitride with respect to the metal carbide. | 03-05-2009 |
| 20090162983 | Method of fabricating schottky barrier transistor - Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate;
| 06-25-2009 |
| 20090236582 | PHASE-CHANGE RAM AND METHOD FOR FABRICATING THE SAME - A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode. | 09-24-2009 |
| 20090289241 | Phase change memory devices and fabrication methods thereof - In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film. | 11-26-2009 |
| 20100112771 | Method of fabricating Schottky barrier transistor - Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate; | 05-06-2010 |
| 20100273306 | Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device - Provided are a phase change layer and a method of forming the phase change layer and a phase change memory device including the phase change layer, and methods of manufacturing and operating the phase change memory device. The phase change layer may be formed of a quaternary compound including an amount of indium (In) ranging from about 15 at. % to about 20 at. %. The phase change layer may be In | 10-28-2010 |
