| Patent application number | Description | Published |
|---|
| 20080198649 | Memory device and method of manufacturing a memory device - A memory device includes a bit line, a reading word line, a bit line contact, an electrode, a writing word line and a contact tip. The bit line is formed on a substrate. The reading word line is formed over the bit line. The bit line contact is disposed between adjacent reading word lines. The electrode extends substantially in parallel to the reading word line and includes a conductive material being bent in response to an applied voltage. The writing word line is formed over the electrode and is separated from the electrode. The contact tip is formed at an end portion of the electrode and is separated from the reading and the writing word lines. The contact tip protrudes toward the reading word line or writing word line. | 08-21-2008 |
| 20080277485 | MEMORY CARD HAVING MULTIPLE APPLICATION-BASED FUNCTIONS, METHOD OF MANUFACTURING THE SAME, METHOD OF OPERATING THE SAME AND DIGITAL DEVICE APPLYING THE SAME - A memory card includes a printed circuit board (PCB) defining an interior space. A control chip is in the interior space. A memory chip is electrically coupled to the control chip. A contact pad is on the PCB outside the interior space. A converting member is located outside the interior space. The converting member is configured to provide an indication to the control chip to change an application function of the control chip and an interface function of the contact pad based on an external input to the memory card. A multi-interface member is located completely inside the interior space of the PCB and electrically coupled to the control chip and the converting member to change the application function of the control chip and the interface function of the contact pad based on operations of the converting member. | 11-13-2008 |
| 20090008699 | Non-volatile semiconductor memory device and method of manufacturing the same - Example embodiments relate to a non-volatile semiconductor memory device and a method of manufacturing the same. A semiconductor device includes an isolation layer protruding from a substrate, a spacer, a tunnel insulation layer, a floating gate, a dielectric layer pattern and a control gate. The spacer may be formed on a sidewall of a protruding portion of the isolation layer. The tunnel insulation layer may be formed on the substrate between adjacent isolation layers. The floating gate may be formed on the tunnel insulation layer. The floating gate contacts the spacer and has a width that gradually increases from a lower portion toward an upper portion. The dielectric layer pattern and the control gate may be sequentially formed on the floating gate. | 01-08-2009 |
