| Patent application number | Description | Published |
|---|
| 20080206935 | METHOD FOR FABRICATING THIN FILM TRANSISTOR USING LOCAL OXIDATION AND TRANSPARENT THIN FILM TRANSISTOR - Disclosed is a method for fabricating a thin film transistor. Specifically, the method uses local oxidation wherein a portion of a transparent metal oxide layer is locally oxidized to be converted into a semiconductor layer so that the oxidized portion of the transparent metal oxide layer can be used as a channel region and the unoxidized portions of the transparent metal oxide layer can be used as source and drain electrodes. | 08-28-2008 |
| 20080248218 | METHOD OF FORMING CARBON NANOTUBES, FIELD EMISSION DISPLAY DEVICE HAVING CARBON NANOTUBES FORMED THROUGH THE METHOD, AND METHOD OF MANUFACTURING FIELD EMISSION DISPLAY DEVICE - There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer. | 10-09-2008 |
| 20090021287 | Circuit and method for driving organic light emitting diode - A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED. | 01-22-2009 |
| 20100176380 | ORGANIC PHOTOELECTRIC DEVICE AND MATERIAL USED THEREIN - The present invention relates to an organic photoelectric device and a material used therein. The organic photoelectric device includes a substrate, an anode disposed on the substrate, a hole transport layer (HTL) disposed on the anode, an emission layer disposed on the hole transport layer (HTL), and a cathode disposed on the emission layer. The emission layer is characterized in that it includes a host and a phosphorescent dopant, and the host has a difference between the reduction potential or oxidation potential of the host and the reduction potential or oxidation potential of the phosphorescent dopant of less than 0.5 eV. The organic photoelectric device according to the present invention is capable of accomplishing higher efficiency and a lower driving voltage than those of the conventional organic photoelectric device, and has a simplified structure resulting in saving of manufacturing cost. | 07-15-2010 |
| 20100201251 | FIELD EMISSION DISPLAY AND MANUFACTURING METHOD OF THE SAME HAVING SELECTIVE ARRAY OF ELECTRON EMISSION SOURCE - The present invention relates to a field emission display and a manufacturing method of the same having selective positioning of electron field emitters. More specifically, the present invention provides a field emission display and a manufacturing method of the same having selective positioning of electron field emitters which can prevent a cross-talk that is a mutual interference phenomenon between pixels and improve uniformity of pixels based on uniform electron emission by deciding positions of carbon nano-tubes which are sources of electron emission and growing carbon nano-tubes before the structure of electrodes is formed, and forming spacers directly on electrodes such that the spacers divide carbon nano-tubes formed uniformly and selectively into pixel units. | 08-12-2010 |
| 20100327354 | THIN FILM TRANSISTOR HAVING LONG LIGHTLY DOPED DRAIN ON SOI SUBSTRATE AND PROCESS FOR MAKING SAME - Methods and apparatus for producing a thin film transistor (TFT) result in: a glass or glass ceramic substrate; a single crystal semiconductor layer; a source structure disposed on the single crystal semiconductor layer; a drain structure disposed on the single crystal semiconductor layer; and a gate structure located with respect to the drain structure defining a lightly doped drain region therein, wherein a lateral length of the lightly doped drain region is such that the TFT exhibits a relatively low carrier mobility and moderate sub-threshold slope suitable for OLED display applications. | 12-30-2010 |
| 20110223748 | METHOD FOR PHASE TRANSITION OF AMORPHOUS MATERIAL - Disclosed herein is a method of crystallizing an amorphous material for use in fabrication of thin film transistors. The method includes forming an amorphous silicon layer on a substrate, depositing a Ni metal layer on part of the amorphous silicon layer, and heat-treating the amorphous silicon layer to cause phase transition of the amorphous silicon, wherein the Ni metal layer is deposited to an average thickness of 0.79 Å or less. The method can crystallize an amorphous material for use in thin film transistors using the metal induced lateral crystallization while restricting thickness and density of Ni, thereby minimizing current leakage in the thin film transistor. | 09-15-2011 |
| 20110233533 | ORGANIC THIN FILM DEVICE - Disclosed herein is an organic thin film device. The organic thin film device includes a UV barrier layer, which has a UV blocking effect, in addition to at least one electrode and at least one organic semiconductor layer on a substrate. The organic thin film device employs a film or a coating liquid which comprises phenolic derivatives or cyanoacrylate derivatives exhibiting a UV-blocking effect in a wavelength of 400 nm or less, so that photodecomposition of an organic material for use in fabrication of the organic thin film device by UV rays and sunlight can be minimized, thereby innovatively increasing lifetime of the device. | 09-29-2011 |
