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Jin Hyuck
Jin Hyuck Jeon, Icheon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100330791 | Method for Fabricating Contacts in Semiconductor Device - Disclosed is a method for fabricating a contact in a semiconductor device, including: obtaining a pattern layout including bit lines arranged across a cell matrix region of a semiconductor substrate, cell storage node contacts arranged to pass through a portion of a first interlayer insulation layer between the bit lines, and dummy storage node contacts additionally arranged in an end of the arrangement of the cell storage node contacts; and forming the cell storage node contacts and the dummy storage node contacts using the pattern layout. | 12-30-2010 |
Jin Hyuck Kim, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20080219283 | FILE TRANSFER METHOD IN CONVERGED IP MESSAGING SYSTEM - A method for performing a one-to-many file transfer in a converged IP messaging system includes receiving a list of target receiving terminals from a transmitting terminal; verifying whether the transmitting terminal can transfer a file; inquiring each receiving terminal server corresponding to each target receiving terminal whether to receive the file; verifying whether each target receiving terminal can receive the file; inquiring each target receiving terminal whether to receive the file; transmitting to the transmitting terminal server the reply of receiving terminals to receive the file; creating a list of determined receiving terminals; requesting the transmitting terminal to transfer the file; receiving the file from the transmitting terminal; and transferring the file to each receiving terminal server corresponding to the determined receiving terminals or to each determined receiving terminal. | 09-11-2008 |
Jin Hyuck Yang, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20110064604 | PARTICULATE TIN POWER AND MANUFACTURING METHOD THEREOF - The present invention relates to particulate tin powder and a manufacturing method thereof. More particularly, the present invention relates to a method of manufacturing particulate tin powder including i) preparing tin salt solution, ii) adding chelating agents to the tin salt solution, iii) adjusting pH of the tin salt solution to which the chelating agents are added, and iv) reductively depositing tin powder by adding reductant to the tin salt solution. | 03-17-2011 |
Jin Hyuck Yang, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20090110630 | METHOD OF MANUFACTURING VANADIUM OXIDE NANOPARTICLES - Disclosed is a method of manufacturing vanadium oxide nanoparticles, which can prepare vanadium oxide particles having a size of tens of nanometers with high yield by using a simple, low-cost process. The method of manufacturing vanadium oxide nanoparticles includes preparing a solution containing a vanadium salt; impregnating an organic polymer including a nanosized pore with the prepared solution; and heating the organic polymer impregnated with the vanadium salt solution until the organic polymer is fired. | 04-30-2009 |
Jin Hyuck Yang, Yongin KR
| Patent application number | Description | Published |
|---|---|---|
| 20120009350 | Electroless autocatalytic tin plating solution and electroless autocatalytic tin plating method using the same - Disclosed are an electroless autocatalytic tin plating solution and an electroless autocatalytic tin plating method using the same. The electroless autocatalytic tin plating solution includes: tin salt formed as a tin ion and a ligand having two or more carboxyl groups are bound; and one or more reductants selected from the group consisting of borohydrides delivering electrons to the tin ion to form a tin layer on a target object to be plated. | 01-12-2012 |
Jin Hyuck Yu, Hwasung-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100177232 | VOLTAGE BIASING CIRCUIT AND DATA PROCESSING SYSTEM HAVING THE SAME - A voltage biasing circuit includes a metal-oxide-semiconductor (MOS) transistor, a voltage control circuit controlling a voltage between a gate and a source of the MOS transistor to operate the MOS transistor in a sub-threshold range, and a capacitor connected to the MOS transistor. The voltage biasing circuit may further include a voltage buffer connected between the voltage control circuit and the MOS transistor. | 07-15-2010 |