| Patent application number | Description | Published |
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| 20090200382 | Combi-Card and Method for Making the Same - The present invention relates to a combi-card which can be used in a contact-type or noncontact-type fashion and a method for manufacturing the same. More particularly, this invention relates to a combi-card and a method for making the same, in which an inlay layer on which an antenna terminal made of a coil or conductive fiber is formed and a COB (chip on board) on which ACF (anisotropic conductor film) is applied, are pre-treated by a heating head and the like, the COB is attached to an antenna coil insertion layer, and an upper printing sheet with a protection film, and a lower printing sheet with a protection film, which are cut out to be suitable for the COB shape, are stacked to construct a combi-card. | 08-13-2009 |
| 20100295633 | ELECTROMAGNETIC BANDGAP PATTERN STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND SECURITY PRODUCT USING THE SAME - Disclosed herein is an electromagnetic bandgap (EBG) pattern structure, including: a nonconductive substrate; and a pattern assembly formed on the substrate and including regularly arranged closed-loop patterns and open-loop patterns both of which are made of a conductive material. The EBG pattern structure is advantageous in that it can be used to manufacture new security products by applying its frequency characteristics to securities or IDs and in that it can be variously used in security technologies for preventing forgery and alteration because various security codes can be created by adjusting the variables of its EBG pattern. | 11-25-2010 |
| 20100320270 | COMBI CARD AND COMMUNICATION SYSTEM USING THEREOF - Provided is a combi-card, i.e. a combination type IC card, which can be used in either contact and non-contact manner, and a communication system using the same, and the combi-card is provided with a transponder chip module formed with a RF antenna and attached in a recess region of a card body and is characterized by the use of the RF antenna of the transponder chip alone as a transmitting and receiving antenna. | 12-23-2010 |
| Patent application number | Description | Published |
|---|
| 20080280214 | Method for Fabricating Photo Mask - In a method for fabricating a photo mask, first resist patterns are formed on a transparent substrate where a light blocking layer and a phase shift layer are formed. Line widths of the first resist patterns are measured to define a region requiring a line width correction. Second resist patterns exposing the defined region are formed on the first resist patterns. The line width of the light blocking layer is corrected by over-etching the exposed light blocking layer to a predetermined thickness. The second resist patterns are removed. Phase shift patterns and light blocking patterns are formed using the first resist patterns as an etch mask. Then, the first resist patterns are removed. | 11-13-2008 |
| 20090111033 | METHOD OF FABRICATING PHOTOMASK - A method for fabricating a photomask includes forming a phase shift layer and a light blocking layer on a transparent substrate, forming a light blocking pattern including a space through which the phase shift layer is selectively exposed by etching light blocking layer, forming a resist pattern to fill the space, reducing a critical dimension (CD) of the resist pattern by irradiating ultraviolet (UV) rays onto the resist pattern, forming a phase shift pattern by etching the phase shift layer exposed during the reducing of the CD of the resist pattern using the reduced resist pattern and the light blocking pattern as an etch mask, and removing the resist pattern. | 04-30-2009 |
| 20090239157 | METHOD FOR FABRICATING PHOTOMASK - Provided is a method for fabricating a photomask. A light blocking layer is formed on a transparent substrate having a first region and a second region. A hard mask layer is formed on the light blocking layer. A first polymer film is formed on the hard mask layer. Here, the first polymer film is formed of single strand polymers that can form a complementary binding. A portion of the first polymer film corresponding to the first region is changed to comprise polymers having partial complementary binding. A hard mask pattern for exposing a portion of the light blocking layer under the first polymer film is formed by performing an etching process using the changed portion as an etch stop. A light blocking pattern is formed by removing an exposed portion of the light blocking layer by performing an etching process using the hard mask pattern as an etch mask, and then removing the hard mask pattern. | 09-24-2009 |
| 20090258303 | Method of Fabricating a Photomask Using Self Assembly Molecule - A method of fabricating a photomask includes includes forming a light blocking layer over a transparent substrate, and forming a hard mask pattern over the light blocking layer. The hard mask pattern exposes a portion of the light blocking layer. The method also includes depositing a self assembly molecule (SAM) layer over the hard mask pattern. The SAM layer covers the hard mask pattern and a portion of the exposed light blocking layer. The method also includes forming a resist layer pattern over an exposed portion of the light blocking layer that is not covered by the deposited SAM layer. The method further includes removing the SAM layer to expose the hard mask pattern and the light blocking layer, and etching the light blocking layer with the hard mask pattern and the resist layer pattern to form the photomask. Still further, the method includes removing the hard mask pattern and the resist layer pattern. The disclosed method permits one to manufacture fine patterns in semiconductor devices utilizing conventional apparatus and materials. | 10-15-2009 |
| 20090325082 | METHOD FOR FABRICATING PATTERNS USING A PHOTOMASK - Disclosed herein is a method for fabricating a pattern using a photomask that includes forming a first light shielding layer pattern over a substrate; forming a first resist layer pattern aligned to the first light shielding layer pattern over the first light shielding layer pattern; forming a phase shift region by selectively etching a portion of the substrate exposed by the first light shielding layer pattern; forming a second resist layer pattern by reducing the line width of the first resist layer pattern; forming a second light shielding layer pattern, having a reduced line width, by etching an exposed portion of the first light shielding layer pattern, and exposing a portion of the substrate adjacent the groove to form a rim region; removing the second resist layer pattern to form a photomask; and transferring a second pattern onto a wafer by performing an exposure process using the photomask. | 12-31-2009 |
