| Patent application number | Description | Published |
|---|
| 20080203393 | THIN FILM TRANSISTOR ARRAY PANEL AND FABRICATION - The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas. | 08-28-2008 |
| 20080204615 | LIQUID CRYSTAL DISPLAY AND METHOD THEREOF - A liquid crystal display (“LCD”) includes a gate line, a data line intersecting the gate line, a pixel including first and second sub-pixels connected to the gate line and the data line, and a coupling capacitor coupled between the first and the second sub-pixels. The first sub-pixel includes a first liquid crystal (“LC”) capacitor and a first thin film transistor (“TFT”). The second sub-pixel includes a second LC capacitor and a second TFT. The first and second TFTs respectively include a gate electrode, a source electrode, and a drain electrode. The gate electrodes of the first and second TFTs are connected to the gate line, the source electrodes of the first and second TFTs are connected to the data line, and the coupling capacitor includes the sub-pixel electrode of the second sub-pixel and the drain electrode of the second TFT as two terminals. | 08-28-2008 |
| 20090239733 | Methods of heat-treating soda-lime glass substrates and heat-treated soda-lime glass substrates formed using the same - A soda-lime glass substrate formed through a heat-treatment method has an absorption coefficient ranging from about 0.15 λ,W/m·K to about 0.54 λ,W/m·K, and a free path length ranging from about 0.12 cm to about 0.24 cm. The heat-treated soda-lime glass substrate is formed by heating for a selected time at a pre-specified maximum temperature of about 270° C. to about 330° C. so as to remove thermally induced residual deformations from the substrate and then the substrate is slowly cooled so as to substantially avoid reintroducing thermally induced residual deformations into the cooling substrate. Thus, the soda-lime glass substrate is transformed to one at or close to its contraction saturation point. This allows the heat-treated soda-lime glass substrate to serve in a practical way as a substrate of a flat display panel. | 09-24-2009 |
| 20090278132 | ARRAY SUBSTRATE OF LIQUID CRYSTAL DISPLAY DEVICE HAVING THIN FILM TRANSISTOR ON COLOR FILTER AND METHOD OF FABRICATING THE SAME - An array substrate of a liquid crystal display device having a color filter on a gate metal layer, and a data metal layer formed on the color filter. First a gate insulating layer is formed on the gate metal layer to protect and a second gate insulating layer is formed on the color filter layer. Gate lines and gate electrodes are formed in direct contact with the substrate, and color filters are formed on the gate electrodes. To protect gate lines in the patterning process of color filters, a first gate insulating layer is formed on the gate lines and electrodes. Therefore, a high aperture ratio may be enhanced, and the manufacturing yield may be increased. | 11-12-2009 |
| 20090280587 | METHOD OF TREATING SODA-LIME GLASS SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME - A method of treating a soda-lime glass (SLG) substrate includes cleaning the SLG substrate using an alkali cleaning solution and cleaning the cleaned SLG substrate using a plasma process. The SLG substrate is cleaned using the alkali cleaning solution to remove particles adhered to the SLG substrate. Thus, defects due to the adhering particles may be reduced. | 11-12-2009 |
| 20100136775 | METHOD OF MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE - Provided is a method for manufacturing a thin-film transistor substrate, in which the etching characteristics of an insulating film and a passivation layer are enhanced. The insulating film and the passivation layer are deposited by low temperature chemical vapor deposition. The method includes disposing a gate wiring on an insulating substrate; disposing a gate insulating film on the gate wiring; disposing a data wiring on the gate insulating film; disposing a passivation layer on the data wiring; and forming a contact hole by etching at least one of the gate insulating film and the passivation layer, wherein at least one of the gate insulating film and the passivation layer is disposed at a temperature of about 280° C. or below, and the forming of the contact hole is performed at a pressure of about 60 mT or below. | 06-03-2010 |
| 20100203715 | THIN FILM TRANSISTOR ARRAY PANEL AND FABRICATION - The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas. | 08-12-2010 |
| 20110051059 | ORGANIC LAYER COMPOSITION AND LIQUID CRYSTAL DISPLAY USING THE SAME - An organic layer composition and a liquid crystal display including the same are provided. An organic layer composition according to an exemplary embodiment includes a binder formed by copolymerizing compounds included in a first group and a second group, wherein the first group includes an acryl-based compound and the second group includes a compound without a —COO— group. | 03-03-2011 |
