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| 20100232657 | Automatic Face Recognition - Automatic face recognition. In a first example embodiment, a method for automatic face recognition includes several acts. First, a face pattern and two eye patterns are detected. Then, the face pattern is normalized. Next, the normalized face pattern is transformed into a normalized face feature vector of Gabor feature representations. Then, a difference image vector is calculated. Next, the difference image vector is projected to a lower-dimensional intra-subject subspace extracted from a pre-collected training face database. Then, a square function is applied to each component of the projection. Next, a weighted summation of the squared projection is calculated. Then, the previous four acts are repeated for each normalized gallery image feature vector. Finally, the face pattern in the probe digital image is classified as belonging to the gallery image with the highest calculated weighted summation where the highest calculated weighted summation is above a predefined threshold. | 09-16-2010 |
| 20110081079 | Automatic Red-Eye Object Classification In Digital Images Using A Boosting-Based Framework - Automatic red-eye object classification in digital images using a boosting-based framework. In a first example embodiment, a method for classifying a candidate red-eye object in a digital photographic image includes several acts. First, a candidate red-eye object in a digital photographic image is selected. Next, a search scale set and a search region for the candidate red-eye object where an eye object may reside is determined. Then, the number of subwindows that satisfy an AdaBoost classifier is determined. This number is denoted as a vote. Next, the maximum size of the subwindows that satisfy the AdaBoost classifier is determined. Then, a normalized threshold is calculated by multiplying a predetermined constant threshold by the calculated maximum size. Next, the vote is compared with the normalized threshold. Finally, the candidate red-eye object is transformed into a true red-eye object if the vote is greater than the normalized threshold. | 04-07-2011 |
| 20110194759 | Mouth Removal Method For Red-Eye Detection And Correction - An input image (e.g. a digital RGB color image) is subjected to an eye classifier that is targeted at discriminating a complete eye pattern from any non-eye patterns. The red-eye candidate list with associated bounding boxes that are generated by the red-eye classifier are received. The bounding rectangles are subjected to object segmentation. A connected component labeling procedure is then applied to obtain one or more red regions. The largest red region is then chosen for feature extraction. A number of features are then extracted from this region. Then these features are used to determine if the particular candidate red-eye object is a mouth. | 08-11-2011 |
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| 20090061651 | Substrate processing apparatus and method for manufacturing semiconductor device - A substrate processing apparatus comprising: a reaction tube that processes a substrate; a support portion that supports the substrate in the reaction tube; a process gas supply line that supplies a process gas into the reaction tube; and an exhaust line that exhausts an inside of the reaction tube, wherein the process gas is supplied into the reaction tube to form a silicon nitride film on the substrate, at least the reaction tube is made of quartz, a plurality of projections are provided on the inner wall of the reaction tube, and the diameter of the projections is larger than 2 μm but smaller than 86 μm. | 03-05-2009 |
| 20090149032 | Method for manufacturing semiconductor device and substrate processing apparatus - The present invention suppresses metallic contamination in a processing chamber and a breakage of a quartz member, while suppressing decrease in film formation rate in a thin film formation process immediately after dry cleaning of the inside of the processing chamber, and enhances the operation rate of a apparatus. The method according to the invention includes the steps of: removing the thin film on the inside of the processing chamber by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a first temperature; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a second temperature. | 06-11-2009 |
| 20090163037 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus which is capable of suppressing the erosion of a metal member installed inside the processing chamber. The substrate processing apparatus includes: a processing chamber for performing a processing of forming a high dielectric constant film on a substrate; a processing gas supply system for supplying a processing gas into the processing chamber in order to form the high dielectric constant film; and a cleaning gas supply system for supplying a cleaning gas, which comprises a halogen-based gas except for a fluorine-based gas, into the processing chamber in order to remove materials including the high dielectric constant film deposited on the inside of the processing chamber, wherein a metal member is installed inside the processing chamber, and a DLC film is formed on at least a part of a surface of the metal member where the cleaning gas contacts. | 06-25-2009 |
| 20090170328 | Method for manufacturing semiconductor device and substrate processing method - The method according to the invention includes the steps of: purging an inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing the temperature in the processing chamber, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material with a weak adhesive force, in a state where the substrate is not present in the processing chamber; removing the thin film deposited on the inside of the processing chamber by supplying a fluorine-based gas to the inside of the processing chamber heated to a first temperature, in the state where the substrate is not present in the processing chamber; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine-based gas to the inside of the processing chamber heated to a second temperature, in the state where the substrate is not present in the processing chamber. | 07-02-2009 |
| 20090239386 | PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded. | 09-24-2009 |
| 20090311873 | Substrate processing apparatus and semiconductor device producing method - Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube. | 12-17-2009 |
| 20100317174 | Manufacturing method of semiconductor device and substrate processing apparatus - A manufacturing method of a semiconductor device is provided, comprising: loading a substrate into a processing chamber; forming a first film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber; forming a second film on the first film by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and unloading the substrate from the processing chamber. | 12-16-2010 |
| 20110207302 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SUBSTRATE PROCESSING METHOD AND APPARATUS - Embodiments described herein relate to improving the quality of a substrate and the performance of a semiconductor device, which is caused by contaminates or particles being engrained into a substrate with a silicon film formed thereon, and forming a silicon film with a small surface roughness. Provided is a semiconductor device manufacturing method that includes forming a silicon film on a substrate, supplying an oxidation seed onto the substrate, performing heat treatment on the silicon film, modifying the surface layer of the silicon film into an oxidized silicon film, and removing the oxidized silicon film. | 08-25-2011 |
| 20110239936 | PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A process for producing a semiconductor device, comprising the steps of conducting film formation on substrate ( | 10-06-2011 |
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| 20090044257 | METHOD AND SYSTEM FOR ASSIGNING HOME AGENT - The invention discloses a method and system for assigning a home agent, and the method includes: indicating, by a visited network, to a home network that the visited network supports the home agent assignment; receiving, by the visited network, authorization information from the home network, the authorization information indicates the visited network is authorized for assigning the home agent; and sending, by the visited network, information about an address of the home agent to a mobile node. The invention can remedy the drawback that the home agent can be assigned to the mobile node only in the home network, thus improving the communication efficiency and reducing the delay. Further, an effective control can be enforced on assignment, so that the visited network can indicate to the home network whether it can support assigning of the home agent, and the home network can enforce a control on whether to perform assignment in the visited network. | 02-12-2009 |
| 20090109878 | METHOD FOR INFORMING THAT THE NETWORK SUPPORTS THE MOBILE IP ENHANCEMENT CAPABILITY - A method for informing that the network supports the mobile Internet Protocol (IP) enhancement capability includes the network sending a message indicating the mobile IP enhancement capability of the network to a mobile station (MS). If the MS supports the mobile IP enhancement capability, the MS requests the enhanced mobile IP service according to the mobile IP enhancement specifications. If the MS does not support the mobile IP enhancement capability, the MS requests the mobile IP service according to the specifications which do not support mobile IP enhancement. The packet data access gateway may be a packet data serving node (PDSN) or a controlling access point (CAP) in a Code Division Multiple Access (CDMA) evolving network. Therefore, the method provided by the present disclosure enables the MS to learn the mobile IP enhancement capability of the network without having to resending requests, thus avoiding the waste of air interface resources. | 04-30-2009 |
