Jie
Hyun-Seock Jie, Seoul KR
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20080314202 | Combustion Reactors for Nanopowders, Synthesis Apparatus for Nanopowders with the Combustion Reactors, and Method of Controlling the Synthesis Apparatus - The present invention relates to a combustion reactor for nanopowders, a synthesis apparatus for nanopowers using the combustion reactor, and a method of controlling the synthesis apparatus. The combustion reactor for nanopowders comprises an oxidized gas supply nozzle connected to an oxidized gas tube; a gas supply unit supplying a fuel gas and a precursor gas; and a reaction nozzle forming concentricity on an inner wall of the oxidized gas supply nozzle to be connected to the gas supply unit and having an inlet opening for supplying an oxidized gas disposed at a region adjacent to a jet orifice for spraying flames. In the present invention, it is possible to precisely control the stability of flames, the uniform temperature distribution of flames and the temperature of flames that affect the properties of nanopowders, and the deposition of oxide in the combustion reactor is prevented to thus enable a continuous and uniform reaction for a long time, thereby enabling an economic and efficient synthesis of nanopowders. | 12-25-2008 |
20130247978 | TITANIUM DIOXIDE NANOPARTICLES FOR FABRICATING PHOTO-ELECTRODE FOR EFFICIENT, LONGLASTING DYE-SENSITIZED SOLAR CELL AND FABRICATION METHOD THEREOF - It is disclosed that a photo-electrode of a dye-sensitized solar cell comprising faceted anatase-type titania nanoparticles which adequate for fabricating a photo-electrode of a dye-sensitized solar cell which is efficient and longlasting and a fabrication method thereof. The titania nanoparticles can provide high photoelectric conversion efficiency of the solar cell with help of fast electron mobility due to its high crystallinity and can reduce process time required for adsorbing the dye molecules on the surface of the titania nanoparticles. | 09-26-2013 |
Lionel Wong Zhen Jie, Taipei TW
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20120110510 | ELECTRONIC DEVICE AND METHOD FOR ADJUSTING SETTINGS THEREOF - A method for adjusting settings of an electronic device is disclosed. The method includes the steps as follows: providing a user interface including a plurality of main setting menu keys and a control unit; selecting one of the main setting menu keys to call a main setting value corresponding to the main setting menu key; outputting a corresponding main setting option image at least including a main setting value display area according to the main setting value; and providing a touch control event to operate the control unit for adjusting the main setting value and then display the adjusted main setting value on the main setting value display area. The touch control event includes a touch displacement event and a touch event. The method for adjusting the settings is contemplated for user's intuitive operation to save the time cost. | 05-03-2012 |
Qing Jie, Houston, TX US
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20140377120 | FORMATION OF P-TYPE FILLED SKUTTERUDITE BY BALL-MILLING AND THERMO-MECHANICAL PROCESSING - A method of manufacturing a thermoelectric material comprising: ball-milling a compound comprising a plurality of components, the first component M comprising at least one of a rare earth metal, an actinide, an alkaline-earth metal, and an alkali metal, the second component T comprising a metal of subgroup VIII, and the third component X comprises a pnictogen atom. The compound may be ball-milled for up to 5 hours, and then thermo-mechanically processed by, for example, hot pressing the compound for less than two hours. Subsequent to the thermo-mechanical processing, the compound comprises a single filled skutterudite phase with a dimensionless figure of merit (ZT) above 1.0 and the compound has a composition following a formula of MT | 12-25-2014 |
20140377901 | FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES - Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi | 12-25-2014 |
Seok-Ho Jie, Gyeonggi-Do KR
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20100325853 | METHOD FOR FABRICATING CAPACITOR - A method for fabricating a capacitor includes forming an etch stop layer, a first isolating insulation layer, and a floating layer over a substrate including storage node contact plugs to form a resulting substrate structure; etching the floating layer, the first isolating insulation layer, and the etch stop layer to form a plurality of open regions; forming a conductive layer over the substrate structure; forming a second isolating insulation layer over the conductive layer, the second isolating insulation layer filling upper portions of the open regions; etching portions of the remaining floating layer to form a floating pattern; performing a storage node isolation process in a manner that the floating pattern is exposed to form a plurality of storage nodes having sidewalls supported by the floating pattern; and removing the etched first isolating insulation layer. | 12-30-2010 |
20110101499 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device and a method for fabricating a semiconductor device are provided. The method for fabricating a semiconductor device includes forming an isolation layer over a semiconductor substrate defining first and second regions, etching the isolation layer at an edge of the first region to form a guard ring pattern, forming a buried guard ring filling the guard ring pattern, selectively etching the isolation layer of the first region to form a plurality of patterns, forming a plurality of conductive patterns in the respective patterns, and completely removing the isolation layer of the first region through a dip-out process. | 05-05-2011 |
20110156206 | SEMICONDUCTOR DEVICE EMPLOYING NITRIDE FLOATING CAPACITOR (NFC) - A semiconductor device includes: a substrate configured to include cell regions and a peripheral region around the cell regions; storage nodes arranged in each of the cell regions; a first support pattern configured in each cell region to support the storage nodes; and a second support pattern configured in the peripheral region to couple first support patterns to each other. | 06-30-2011 |
20130009273 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device and a method for fabricating a semiconductor device are provided. The method for fabricating a semiconductor device includes forming an isolation layer over a semiconductor substrate defining first and second regions, etching the isolation layer at an edge of the first region to form a guard ring pattern, forming a buried guard ring filling the guard ring pattern, selectively etching the isolation layer of the first region to form a plurality of patterns, forming a plurality of conductive patterns in the respective patterns, and completely removing the isolation layer of the first region through a dip-out process. | 01-10-2013 |
Wei Jie, Kawasaki JP
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20090117842 | COOLING AUXILIARY UNIT AND COOLING SYSTEM - A cooling auxiliary unit used for an accommodation room configured to accommodate an electronic apparatus includes a duct member that stands upon an ventilation hole provided on a raised floor, and has an air passage connected to the ventilation hole, and an opening connected to the air passage, and a fan that moves air along the air passage. | 05-07-2009 |
Yebing Jie US
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20160000636 | WALKING AID - The present invention relates to the walking aid field. The present invention provides a walking aid, including a support frame, with a plurality of support legs disposed at a bottom of the support frame, and omni-directional wheels disposed on the support legs, wherein a buffering structure is further disposed between each support leg and each omni-directional wheel. In the walking aid provided by the present invention, a buffering structure is disposed between a support frame structure and an omni-directional wheel of the walking aid. On the one hand, the buffering structure may have a buffering effect in use of the entire walking aid, and when the walking aid contacts the ground, can act as a buffer to reduce physical energy consumption of a user in use of the walking aid, and lessen discomfort of the user as much as possible; on the other hand, when the walking aid stops moving, the buffering structure can better support the walking aid securely on the ground, and when the walking aid stops, apply force downward to the walking aid, so that four effective contacts are formed by the casing of the buffering structure. | 01-07-2016 |
Zhang Jie, San Jose, CA US
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20100184292 | SYSTEMS, METHODS AND SLURRIES FOR CHEMICAL-MECHANICAL ROUGH POLISHING OF GAAS WAFERS - Chemical polishing systems, methods and slurries are disclosed for the chemical-mechanical rough polishing of GaAs wafers. An exemplary polishing slurry consistent with the innovations herein may comprise dichloroisocyanurate, sulfonate, pyrophosphate, bicarbonate and silica sol. An exemplary chemical polishing method may comprise polishing a wafer in a chemical polishing apparatus in the presence of such a chemical polishing solution. Chemical polishing solutions and methods herein make it possible, for example, to improve wafer quality, decrease costs, and/or reduce environmental pollution. | 07-22-2010 |