Patent application number | Description | Published |
20100215655 | ANGIOGENESIS-INHIBITING CHIMERIC PROTEINS AND THE USE - The present invention is directed to DNA sequence encoding angionenesis-inhibiting recombinant chimeric protein, the chimeric protein per se, the pharmaceutical use of the chimeric protein, and to the pharmaceutical composition containing the recombinant protein and the formulation thereof. | 08-26-2010 |
20120112340 | Semiconductor Device and Method of Forming Insulating Layer Disposed Over The Semiconductor Die For Stress Relief - A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is formed over the semiconductor die and first conductive layer and into the first channel. The first insulating layer extends into the second channel. The first insulating layer has characteristics of tensile strength greater than 150 MPa, elongation between 35-150%, and thickness of 2-30 micrometers. A second insulating layer can be formed over the semiconductor die prior to forming the first insulating layer. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected to the first conductive layer. The first insulating layer provides stress relief during formation of the interconnect structure. | 05-10-2012 |
20130069225 | Semiconductor Device and Method of Forming Protection and Support Structure for Conductive Interconnect Structure - A semiconductor device has a semiconductor wafer with a plurality of contact pads. A first insulating layer is formed over the semiconductor wafer and contact pads. A portion of the first insulating layer is removed, exposing a first portion of the contact pads, while leaving a second portion of the contact pads covered. An under bump metallization layer and a plurality of bumps is formed over the contact pads and the first insulating layer. A second insulating layer is formed over the first insulating layer, a sidewall of the under bump metallization layer, sidewall of the bumps, and upper surface of the bumps. A portion of the second insulating layer covering the upper surface of the bumps is removed, but the second insulating layer is maintained over the sidewall of the bumps and the sidewall of the under bump metallization layer. | 03-21-2013 |
20130069227 | Semiconductor Device and Method of Forming Protection and Support Structure for Conductive Interconnect Structure - A semiconductor device has a semiconductor wafer with a plurality of contact pads. A first insulating layer is formed over the semiconductor wafer and contact pads. A portion of the first insulating layer is removed, exposing a first portion of the contact pads, while leaving a second portion of the contact pads covered. An under bump metallization layer and a plurality of bumps is formed over the contact pads and the first insulating layer. A second insulating layer is formed over the first insulating layer, a sidewall of the under bump metallization layer, sidewall of the bumps, and upper surface of the bumps. A portion of the second insulating layer covering the upper surface of the bumps is removed, but the second insulating layer is maintained over the sidewall of the bumps and the sidewall of the under bump metallization layer. | 03-21-2013 |
20130075936 | Semiconductor Device and Method of Forming Interconnect Substration for FO-WLCSP - A semiconductor device has a first encapsulant deposited over a first carrier. A plurality of conductive vias is formed through the first encapsulant to provide an interconnect substrate. A first semiconductor die is mounted over a second carrier. The interconnect substrate is mounted over the second carrier adjacent to the first semiconductor die. A second semiconductor die is mounted over the second carrier adjacent to the interconnect substrate. A second encapsulant is deposited over the first and second semiconductor die, interconnect substrate, and second carrier. A first interconnect structure is formed over a first surface of the second encapsulant and electrically connected to the conductive vias. A second interconnect structure is formed over a second surface of the second encapsulant and electrically connected to the conductive vias to make the Fo-WLCSP stackable. Additional semiconductor die can be mounted over the first and second semiconductor die in a PoP arrangement. | 03-28-2013 |
20130113092 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING INSULATING LAYER DISPOSED OVER THE SEMICONDUCTOR DIE FOR STRESS RELIEF - A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is formed over the semiconductor die and first conductive layer and into the first channel. The first insulating layer extends into the second channel. The first insulating layer has characteristics of tensile strength greater than 150 MPa, elongation between 35-150%, and thickness of 2-30 micrometers. A second insulating layer can be formed over the semiconductor die prior to forming the first insulating layer. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected to the first conductive layer. The first insulating layer provides stress relief during formation of the interconnect structure. | 05-09-2013 |
20130147019 | Semiconductor Device and Method of Forming Insulating Layer Around Semiconductor Die - A plurality of semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. A portion of the encapsulant is designated as a saw street between the die, and a portion of the encapsulant is designated as a substrate edge around a perimeter of the encapsulant. The carrier is removed. A first insulating layer is formed over the die, saw street, and substrate edge. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first conductive layer and first insulating layer. The encapsulant is singulated through the first insulating layer and saw street to separate the semiconductor die. A channel or net pattern can be formed in the first insulating layer on opposing sides of the saw street, or the first insulating layer covers the entire saw street and molding area around the semiconductor die. | 06-13-2013 |
20130175668 | Semiconductor Device and Method of Making Integrated Passive Devices - A semiconductor device has integrated passive circuit elements. A first substrate is formed on a backside of the semiconductor device. The passive circuit element is formed over the insulating layer. The passive circuit element can be an inductor, capacitor, or resistor. A passivation layer is formed over the passive circuit element. A carrier is attached to the passivation layer. The first substrate is removed. A non-silicon substrate is formed over the insulating layer on the backside of the semiconductor device. The non-silicon substrate is made with glass, molding compound, epoxy, polymer, or polymer composite. An adhesive layer is formed between the non-silicon substrate and insulating layer. A via is formed between the insulating layer and first passivation layer. The carrier is removed. An under bump metallization is formed over the passivation layer in electrical contact with the passive circuit element. A solder bump is formed on the under bump metallization. | 07-11-2013 |
20140339683 | Semiconductor Device and Method of Forming Insulating Layer Around Semiconductor Die - A plurality of semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. A portion of the encapsulant is designated as a saw street between the die, and a portion of the encapsulant is designated as a substrate edge around a perimeter of the encapsulant. The carrier is removed. A first insulating layer is formed over the die, saw street, and substrate edge. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first conductive layer and first insulating layer. The encapsulant is singulated through the first insulating layer and saw street to separate the semiconductor die. A channel or net pattern can be formed in the first insulating layer on opposing sides of the saw street, or the first insulating layer covers the entire saw street and molding area around the semiconductor die. | 11-20-2014 |
Patent application number | Description | Published |
20120264417 | Method and System for Mobility Parameter Negotiation Between Base Stations - The disclosure discloses a method for mobility parameter negotiation between base stations (BSs). A target BS performs a mobility parameter decision and an optimization processing after receiving a mobility parameter modification request message from a source BS. When the processing succeeds, the target BS sends a mobility parameter modification acknowledgement message at least carrying a message type and a source cell ID to the source BS; when it fails, the target BS sends a mobility parameter modification failure message at least carrying a message type, a reason of failure, and the source cell ID to the source BS. A system for mobility parameter negotiation between BSs is also provided. Through the disclosure, the source BS is able to precisely recognize which source cell the mobility handover parameter negotiation is performed to, and further precisely knows which target cell the negotiation message comes from, thereby avoiding the inconsistency of the mobility parameter modification caused by message disorder, improving robustness of the mobility parameter modification and enhancing the network performance. | 10-18-2012 |
20130053051 | METHOD AND SYSTEM FOR PROCESSING CELL SLEEPING - The present invention provides a method and a system for processing cell sleeping. The method comprises: a cell sending a sleeping request message to a neighbor cell (S | 02-28-2013 |
20130114490 | METHOD AND SYSTEM FOR WAKING UP NODE B CELL - The disclosure provides a method and a system for waking up a Node B (NB) cell. When a User Equipment (UE) in an idle state arrives in an area of a Home NB cell in which the UE ever resided, but does not search out signals of the Home cell, or when the UE in an idle state finds that signals of a cell in which the UE currently resides get worse, and does not find other better cells, the UE reports Proximity Indication (PI) information to a network side through a specific Tracking Area Update (TAU) process; when determining that there is need to wake up the NB cell according to footprint information which is reported by the UE and obtained in the specific TAU process, the network side wakes up the NB cell. By means of the specific TAU process of the disclosure, it is ensured that the UE in an idle state wakes up the sleeping Home NB cell (or macro cell) in time, so that the UE can get service from the Home NB cell (or macro cell) in time and thus a network coverage problem caused by cell sleeping for saving energy is avoided. | 05-09-2013 |
20150092579 | Drive Test Minimization Method and Device for Obtaining Time Delay - A method, device and system for controlling assistant information of user equipment are disclosed. The field of wireless communication technology is related, and the problem is solved that the system efficiency is reduced, for UE reports the assistant information inappropriately. The method includes: the user equipment acquiring a control parameter of assistant information configured by a network side; and the user equipment reporting the assistant information of the user equipment to the network side according to the control parameter of assistant information. The technical scheme provided in the example of the present document is applied to a LTE system or a UMTS system, which implements that the network side controls the UE reporting the assistant information. | 04-02-2015 |