| Patent application number | Description | Published |
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| 20090208578 | Method of tissue repair using a multi-layered matrix - A multi-layered matrix, a method of tissue repair using the same, and multi-layered implant prepared thereof are provided. The multi-layered matrix comprises a first element and a second element connected thereto, and the second element comprises a hollow cavity. The first and the second elements are composed of a composite material comprising a bioabsorbable porous material. | 08-20-2009 |
| 20090210057 | Multi-layered implant prepared by a method of tissue repair using a multi-layered matrix - A multi-layered matrix, a method of tissue repair using the same, and multi-layered implant prepared thereof are provided. The multi-layered matrix comprises a first element and a second element connected thereto, and the second element comprises a hollow cavity. The first and the second elements are composed of a composite material comprising a bioabsorbable porous material. | 08-20-2009 |
| 20110160732 | Bone Repairing Kit and Method for Bone Repair - A bone repairing kit including a drilling device, a pushing device, a clamping member and a hole saw is provided. An end of a tube body of the drilling device is a knife portion. When the tube body rotates with respect to a femur, a bone column is cut by the knife portion and located in the tube body. The pushing device includes a hollow tube and a push bar. The hollow tube is for receiving the tube body. The push bar is for touching and pushing the bone column in the tube body. The clamping member is for clamping the bone column. The hole saw includes a receiving body and cutting knives. The receiving body has a recess for receiving an end of the bone column. The cutting knives surrounding on an inner wall of the recess are for cutting an edge of the end of the bone column. | 06-30-2011 |
| 20120004675 | DEVICE FOR FIXING SOFT TISSUE - A device for fixing soft tissue. A sleeve is detachably connected to a self-drilling tapping screw, moving and rotating the self-drilling tapping screw. A guide bar is detachably connected to the self-drilling tapping screw and fit in the sleeve. A fixing pin is fit in a washer and connected to the self-drilling tapping screw. The guide bar is detachably fit in the fixing pin. The fixing pin abuts the washer and the self-drilling tapping screw. | 01-05-2012 |
| Patent application number | Description | Published |
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| 20090287435 | SYSTEM-LEVEL ESD DETECTION CIRCUIT - An ESD detection circuit for detecting a level of an ESD voltage on a power rail is provided. The ESD detection circuit includes a resistive component, a diode unit, and a controller. The resistive component is coupled between a detection node and a ground node corresponding to the power rail. The diode unit is coupled between the power rail and the detection node in a forward direction toward the power rail. The controller, coupled to the detection node, is used for determining the level of the ESD voltage based on the voltage of the detection node and the breakdown voltage of the diode unit. | 11-19-2009 |
| 20090296293 | ESD PROTECTION CIRCUIT FOR DIFFERENTIAL I/O PAIR - An ESD protection circuit for a differential I/O pair is provided. The circuit includes an ESD detection circuit, a discharge device, and four diodes. The first diode is coupled between the first I/O pin and the discharge device in a forward direction toward the discharge device. The second diode is coupled between the second I/O pin and the discharge device in a forward direction toward the second I/O pin. The third diode is coupled between the discharge device and the positive power line in a forward direction toward the positive power line. The fourth diode is coupled between the discharge device and the negative power line in a forward direction toward the discharge device. Via an output end, the ESD detection circuit triggers the discharge device during ESD events. | 12-03-2009 |
| 20100155774 | BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSION DEVICE AND FORMING METHOD THEREOF - A bidirectional transient voltage suppression device is disclosed. The bi-directional transient voltage suppression device comprises a semiconductor die. The semiconductor die has a multi-layer structure comprising a semiconductor substrate of a first conductivity type, a buried layer of a second conductivity type, an epitaxial layer, and five diffused regions. The buried layer and the semiconductor substrate form a first semiconductor junction. The first diffused region of the second conductivity type and the semiconductor substrate form a second semiconductor junction. The fourth diffused region of the first conductivity type and the third diffused region of the second conductivity type form a third semiconductor junction. The fifth diffused region of the first conductivity type and the second diffused region of the second conductivity type form a fourth semiconductor junction. | 06-24-2010 |
