| Patent application number | Description | Published |
|---|
| 20080224164 | Light Emitting Device with a Nanocrystalline Silicon Embedded Insulator Film - A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter. | 09-18-2008 |
| 20080305566 | Silicon Nanocrystal Embedded Silicon Oxide Electroluminescence Device with a Mid-Bandgap Transition Layer - A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced. | 12-11-2008 |
| 20090033207 | High Quantum Efficiency Silicon Nanoparticle Embedded SiOxNy Luminescence Device - A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiO | 02-05-2009 |
| 20090040599 | Optical Waveguide Amplifier Using High Quantum Efficiency Silicon Nanocrystal Embedded Silicon Oxide - A method is provided for optical amplification using a silicon (Si) nanocrystal embedded silicon oxide (SiOx) waveguide. The method provides a Si nanocrystal embedded SiOx waveguide, where x is less than 2, having a quantum efficiency of greater than 10%. An optical input signal is supplied to the Si nanocrystal embedded SiOx waveguide, having a first power at a first wavelength in the range of 700 to 950 nm. The Si nanocrystal embedded SiOx waveguide is pumped with an optical source having a second power at a second wavelength in a range of 250 to 550 nm. As a result, an optical output signal having a third power is generated, greater than the first power, at the first wavelength. In one aspect, the third power increases in response to the length of the waveguide strip. | 02-12-2009 |
| 20090058266 | Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Luminescence Device - A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers. | 03-05-2009 |
| 20090115311 | Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Electroluminescence Device - A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for electroluminescence (EL) applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including an element selected from a group consisting of N and C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film is formed having an extinction coefficient (k) in a range of 0.01-1.0, as measured at about 632 nanometers (nm), and a current density (J) of greater than 1 Ampere per square centimeter (A/cm | 05-07-2009 |
| 20100278475 | Light Emitting Device and Planar Waveguide with Single-Sided Periodically Stacked Interface - Light emitting and waveguide devices with single-sided photonic bandgaps are provided. The light emitting device is formed from a heavily doped silicon (Si) bottom electrode, and a Si-containing dielectric layer embedded Si nanoparticles overlying the bottom electrode. A transparent indium tin oxide (ITO) top electrode overlies the Si-containing dielectric layer, and a photonic bandgap (PBG) Bragg reflector underlies the Si bottom electrode. The PBG Bragg reflector includes at least one periodic bi-layer of films with different refractive indexes. The single-sided photonic bandgap planar waveguide interface is formed from a planar waveguide and a PBG Bragg reflector underlying the planar waveguide. | 11-04-2010 |
| 20110032743 | Colloidal-Processed Silicon Particle Device - Colloidal-processed Si particle devices, device fabrication, and device uses have been presented. The generic device includes a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing. A colloidal-processed Si particle layer overlies the first electrode, the second electrode, and the spacing between the electrodes. The Si particle layer includes a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles. | 02-10-2011 |
| 20110074808 | Full Color Gamut Display Using Multicolor Pixel Elements - A display device is provided that includes a plurality of pixels, where each pixel includes a single subpixel. In a first aspect, a single subpixel is able to sequentially generate a plurality of (e.g., at least three) primary colors. As a result of the single subpixel, the display is able to supply a gamut of colors including at least 3 primaries colors. For example, the sequential generation of the 3 primary colors may involve operating the subpixel in a time division multiplex (TDM) mode, and a primary combination color is supplied in response to the subpixel generating 2 primary colors in respective TDM subframes. When the pixel includes at least two neighboring subpixels, the pixel may additionally be operated in a spatial division multiple (SDM) mode or in the TDM mode. | 03-31-2011 |
| 20110109821 | Plasmonic Device Tuned using Liquid Crystal Molecule Dipole Control - A plasmonic display device is provided with liquid crystal dipole molecule control. The device is made from a first set of electrodes including at least one electrically conductive top electrode and at least one electrically conductive bottom electrode capable of generating a first electric field in a first direction. A second set of electrodes, including an electrically conductive right electrode and an electrically conductive left electrode, is capable of generating a second electric field in a second first direction. A dielectric layer overlies the bottom electrode, made from a liquid crystal material with molecules having dipoles responsive to an electric field. A plasmonic layer, including a plurality of discrete plasmonic particles, is interposed between the first and second set of electrodes and in contact with the dielectric layer. In one aspect, the plasmonic layer is embedded in the dielectric layer. | 05-12-2011 |
