Patent application number | Description | Published |
20090117497 | METHOD OF FORMING PATTERN USING FINE PITCH HARD MASK - A method of forming a fine pattern of a semiconductor device using a fine pitch hard mask is provided. A first hard mask pattern including first line patterns formed on an etch target layer of a substrate with a first pitch is formed. A first layer including a top surface where a recess is formed between adjacent first line patterns is formed. A second hard mask pattern including second line patterns within the recess is formed. An anisotropic etching process is performed on the first layer using the first and the second line patterns as an etch mask. Another anisotropic etching process is performed on the etch target layer using the first and the second hard mask patterns as an etch mask. | 05-07-2009 |
20100197139 | METHOD OF FORMING A HARD MASK AND METHOD OF FORMING A FINE PATTERN OF SEMICONDUCTOR DEVICE USING THE SAME - A method of forming hard mask employs a double patterning technique. A first hard mask layer is formed on a substrate, and a first sacrificial pattern is formed on the first hard mask layer by photolithography. Features of the first sacrificial pattern are spaced from one another by a first pitch. A second hard mask layer is then formed conformally on the first sacrificial pattern and the first hard mask layer so as to delimit recesses between adjacent features of the first sacrificial pattern. Upper portions of the second hard mask layer are removed to expose the first sacrificial pattern, and the exposed first sacrificial pattern and the second sacrificial pattern are removed. The second hard mask layer and the first hard mask layer are then etched to form a hard mask composed of residual portions of the first hard mask layer and the second hard mask layer. A fine pattern of a semiconductor device, such as a trench isolation region or a pattern of contact holes, can be formed using the hard mask as an etch mask. | 08-05-2010 |
20100221921 | Methods of Forming Patterns in Semiconductor Devices - Methods of forming patterns in semiconductor devices are provided including forming first patterns spaced apart from one another on an object structure. A first sacrificial layer is formed conformally on the first patterns and the object structure. A second pattern is formed on a sidewall of the first sacrificial layer, the second pattern having a height smaller than that of the first pattern from an upper surface of the object structure. The first patterns are selectively removed to form an opening that exposes the object structure. A third pattern is formed on a sidewall of the opening. | 09-02-2010 |
20100332048 | Refrigerating apparatus and method of controlling the same - Disclosed herein are a refrigerating apparatus and a method of controlling the same. The method includes lowering a temperature in a storage chamber to a freezing point temperature zone by adjusting cold air supplied to the storage chamber, and lowering the temperature in the storage chamber to a temperature below a freezing point by increasing an amount of the cold air supplied to the storage chamber, when it is determined that a temperature of articles stored in the storage chamber is stabilized in the freezing point temperature zone by the cold air. When the surface temperature and the center temperature of the stored articles are cooled close to the freezing point and are then cooled again to the freezing temperature below the freezing point, super-cooling of the stored articles is carried out for a short time, the surfaces and the centers of the stored articles start to freeze simultaneously. | 12-30-2010 |
20110076846 | SEMICONDUCTOR DEVICE HAVING FINE CONTACTS AND METHOD OF FABRICATING THE SAME - A semiconductor device has a structure of contacts whose size and pitch are finer that those that can be produced under the resolution provided by conventional photolithography. The contact structure includes a semiconductor substrate, an interlayer insulating layer disposed on the substrate, annular spacers situated in the interlayer insulating layer, first contacts surrounded by the spacers, and a second contact buried in the interlayer insulating layer between each adjacent pair of the first spacers. The contact structure is formed by forming first contact holes in the interlayer insulating layer, forming the spacers over the sides of the first contact holes to leave second contact holes within the first contact holes, etching the interlayer insulating layer from between the spacers using the first spacers as an etch mask to form third contact holes, and filling the first and second contact holes with conductive material. In this way, the pitch of the contacts can be half that of the first contact holes. | 03-31-2011 |
20110081778 | SEMICONDUCTOR DEVICE HAVING FINE PATTERN WIRING LINES INTEGRALLY FORMED WITH CONTACT PLUG AND METHOD OF MANUFACTURING SAME - A semiconductor device and method are disclosed in which an interlayer insulating layer is patterned using multiple overlaying masks to define the geometry of contact plugs and corresponding wiring layers separated by fine pitches. | 04-07-2011 |
20110269294 | METHOD OF FORMING A HARD MASK AND METHOD OF FORMING A FINE PATTERN OF SEMICONDUCTOR DEVICE USING THE SAME - A method of forming hard mask employs a double patterning technique. A first hard mask layer is formed on a substrate, and a first sacrificial pattern is formed on the first hard mask layer by photolithography. Features of the first sacrificial pattern are spaced from one another by a first pitch. A second hard mask layer is then formed conformally on the first sacrificial pattern and the first hard mask layer so as to delimit recesses between adjacent features of the first sacrificial pattern. Upper portions of the second hard mask layer are removed to expose the first sacrificial pattern, and the exposed first sacrificial pattern and the second sacrificial pattern are removed. The second hard mask layer and the first hard mask layer are then etched to form a hard mask composed of residual portions of the first hard mask layer and the second hard mask layer. A fine pattern of a semiconductor device, such as a trench isolation region or a pattern of contact holes, can be formed using the hard mask as an etch mask. | 11-03-2011 |
20150092233 | SYSTEM AND METHOD FOR PROVIDING CLOUD PRINTING SERVICE - Provided is an image forming system operable to provide a cloud printing service, the image forming system comprising: a transmitting device operable to transmit content by designating a target phone number; a cloud printing server operable to receive the target phone number and the content from the transmitting device; a receiving device assigned with the target phone number and operable to receive an upload notification of the content with respect to the target phone number from the cloud printing server; and an image forming device operable to print the content by receiving the content from the cloud printing server, wherein the cloud printing server transmits the content to the image forming device registered in the target phone number when the cloud printing service is requested for the content to the target phone number. | 04-02-2015 |