| Patent application number | Description | Published |
|---|
| 20100104981 | COLORED DISPERSION, PHOTORESIST COMPOSITION AND BLACK MATRIX - A colored dispersion according to the present invention comprises a resin including monomers of Formulas 1 to 4, as a binder resin. | 04-29-2010 |
| 20100201925 | FLUORENE-BASED POLYMER CONTAINING URETHANE GROUPS, PREPARATION METHOD THEREOF AND NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION COMPRISING THE SAME - Provided is a novel fluorene-based polymer having urethane bonds and a method for preparing the fluorene-based polymer. According to the method, a diol compound is condensed with a diisocyanate instead of an acid dianhydride, and then an acid anhydride is reacted with the reaction mixture to introduce desired acid groups into the final polymer. Further provided is a negative-type photosensitive resin composition comprising of the fluorene-based polymer as a binder resin. The composition exhibits improved chemical resistance, good development margin and high sensitivity due to presence of the acid groups despite the low molecular weight of the fluorene-based polymer. | 08-12-2010 |
| 20100331439 | MULTIFUNCTION URETHANE MONOMER, METHOD OF MANUFACTURING THE MONOMER AND PHOTOSENSITIVE RESIN COMPOSITION INCLUDING THE MONOMER - Disclosed is a multifunctional urethane monomer prepared by reacting (a) an epoxy compound having two or more epoxy groups, (b) a diol compound having an acidic group and (c) a compound having an ethylenically unsaturated group and an isocyanate group with one another. The photosensitive resin composition comprising the multifunctional urethane monomer has low viscosity, superior sensitivity, excellent chemical resistance and heat-resistance and high development margin. | 12-30-2010 |
| 20110101268 | PHOTOSENSITIVE RESIN COMPOSITION FOR BLACK MATRIX - A photosensitive resin composition for a black matrix and a black matrix formed with the same are provided. The photosensitive resin composition for a black matrix includes a solvent consisting of 5-30 weight % of a first solvent having a boiling point of 110-159° C., 55-90 weight % of a second solvent having a boiling point of 160-200° C., and 3-15 weight % of a third solvent having a boiling point of 201-280° C., and the first solvent, the second solvent, and the third solvent are an aliphatic compound and use at least one solvent composition selected from a group consisting of alkyl ester, alkyl ketone, alkyl ether, and alkyl alcohol, and thus a uniform thin film having no surface defect can be obtained, and the photosensitive resin composition has an excellent process property while securing a high light shielding property and thus a black matrix pattern having a few defect can be obtained, and is thus useful for a liquid crystal display. | 05-05-2011 |
| 20110151379 | BLACK MATRIX COMPOSITION WITH HIGH LIGHT-SHIELDING AND IMPROVED ADHESION PROPERTIES - The present invention relates to a black matrix photosensitive resin composition having high light-shielding and improved adhesion properties and a black matrix for a liquid crystal display including the same. The black matrix photosensitive resin composition comprises an alkali-soluble binder resin, a multi-functional monomer having an ethylenic unsaturated double bond, a photopolymerization initiator, an adhesion accelerator, a solvent, and a colorant comprising black pigments. A Cardo type binder is mixed in an amount of 10 to 90 wt % and an acryl type binder is mixed in an amount of 10 to 90 wt % based on a total weight of the alkali-soluble binder resin including the Cardo type binder and the acryl type binder. | 06-23-2011 |
| Patent application number | Description | Published |
|---|
| 20080251858 | FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and a semiconductor substrate using an insulating layer having a multi-layer structure with different etch rates. Since parasitic capacitance between the gate electrode and the semiconductor substrate is reduced by the void, the head portion of the gate electrode can be made large so that gate resistance can be reduced. In addition, since the height of the gate electrode can be adjusted by adjusting the thickness of the insulating layer, device performance as well as process uniformity and repeatability can be improved. | 10-16-2008 |
| 20090146184 | SEMICONDUCTOR DEVICE WITH T-GATE ELECTRODE AND METHOD FOR FABRICATING THE SAME - Provided are a semiconductor device with a T-gate electrode capable of improving stability and a high frequency characteristic of the semiconductor device by reducing source resistance, parasitic capacitance, and gate resistance and a method of fabricating the same. In the semiconductor device, in order to form source and drain electrodes and the T-gate electrode on a substrate, first and second protective layers constructed with silicon oxide layers or silicon nitride layers are formed on sides of a supporting part under a head part of the T-gate electrode, and the second protective layer constructed with a silicon oxide layer or silicon nitride layer is formed on sides of the source and drain electrodes. Accordingly, it is possible to protect an activated region of the semiconductor device and reduce gate-drain parasitic capacitance and gate-source parasitic capacitance. | 06-11-2009 |
| 20090170250 | TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a transistor of a semiconductor device and method of fabricating the same. The transistor includes: an epitaxy substrate disposed on a semi-insulating substrate and having a buffer layer, a first Si planar doping layer, a first conductive layer, a second Si planar doping layer, and a second conductive layer, which are sequentially stacked, the second Si planar doping layer having a doping concentration different from that of the first Si planar doping layer; a source electrode and a drain electrode diffusing into the first Si planar doping layer to a predetermined depth and disposed on both sides of the second conductive layer to form an ohmic contact; and a gate electrode disposed on the second conductive layer between the source and drain electrodes and being in contact with the second conductive layer. In this structure, both isolation and switching speed of the transistor can be increased. Also, the maximum voltage limit applied to the transistor is increased due to increases in gate turn-on voltage and threshold voltage and a reduction in parallel conduction element. As a result, the power handling capability of the transistor can be improved, thus improving a high-power low-distortion characteristic and an isolation characteristic. | 07-02-2009 |
| 20100133551 | HIGH-SPEED OPTICAL INTERCONNECTION DEVICE - Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors. | 06-03-2010 |
| 20110037521 | POWER AMPLIFIER HAVING DEPLETION MODE HIGH ELECTRON MOBILITY TRANSISTOR - Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor. | 02-17-2011 |
| 20110143507 | TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a transistor of a semiconductor device and a method of fabricating the same. The transistor of a semiconductor device includes an epitaxial substrate having a buffer layer, a first silicon (Si) planar doped layer, a first conductive layer, a second Si planar doped layer having a different dopant concentration from the first Si planar doped layer, and a second conductive layer, which are sequentially formed on a semi-insulating substrate; a source electrode and a drain electrode formed on both sides of the second conductive layer to penetrate the first Si planar doped layer to a predetermined depth to form an ohmic contact; and a gate electrode formed on the second conductive layer between the source electrode and the drain electrode to form a contact with the second conductive layer, wherein the gate electrode, the source electrode and the drain electrode are electrically insulated by an insulating layer, and a predetermined part of an upper part of the gate electrode is formed to overlap at least one of the source electrode and the drain electrode. Therefore, a maximum voltage that can be applied to the switching device is increased due to increases of a gate turn-on voltage and a breakdown voltage, and decrease of a parallel conduction component. As a result of this improved power handling capability, high-power and low-distortion characteristics and high isolation can be expected from the switching device. | 06-16-2011 |
| Patent application number | Description | Published |
|---|
| 20090298831 | PHENYL PIPERAZINE COMPOUNDS, PHARMACEUTICAL COMPOSITION INCLUDING THE SAME AND USE THEREOF - The present invention relates to novel piperazine derivatives or pharmaceutically acceptable salts thereof, a process for preparing the same, and in particular, a high binding for Serotonin 1A(5-hydroxytryptamine; 5-HT1A) receptor, a pharmaceutical composition for treatment and/or prevention of depression and anxiety including an effective amount of the piperazine compound, and a method of treating depression, anxiety and other conditions related to 5-HT1A receptor in a mammal. | 12-03-2009 |
| 20090298851 | PHENYL PIPERAZINE COMPOUNDS, PHARMACEUTICAL COMPOSITION COMPRISING THE SAME AND USE THEREOF - The present invention relates to a novel piperazine derivative or pharmaceutically acceptable salt thereof, a process for preparing the same, a pharmaceutical composition for treating central nervous system diseases comprising an effective amount of the piperazine compound and a method of treating central nervous system (CNS) disorder such as psychosis in a mammal. | 12-03-2009 |
| 20110118264 | PHENYL PIPERAZINE COMPOUNDS, PHARMACEUTICAL COMPOSITION INCLUDING THE SAME AND USE THEREOF - The present invention relates to novel piperazine derivatives or pharmaceutically acceptable salts thereof, a process for preparing the same, and in particular, a high binding for Serotonin 1A(5-hydroxytryptamine; 5-HT1A) receptor, a pharmaceutical composition for treatment and/or prevention of depression and anxiety including an effective amount of the piperazine compound, and a method of treating depression, anxiety and other conditions related to 5-HT1A receptor in a mammal | 05-19-2011 |
