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Jhin
Ik-Hyoun Jhin, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20090222790 | SYSTEM AND METHOD FOR PROCESSING RESOURCE DESCRIPTION FRAMEWORK DATA - The present invention relates to a system and method for processing resource description framework data. The present invention relates to a system and method allowing a general-purpose program to support operation of resource description language (RDF) data models, not operation of RDF ontology using a library. Therefore, it is possible to process RDF data by using an existing high-level programming language. Further, since a developer clearly perceives RDF data models, it is possible to easily operate RDF ontology. | 09-03-2009 |
Jae Hwa Jhin, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20100133014 | Core Catcher and Corer Having It - The present invention relates to a core catcher and a corer having the same, and more particularly, to a core catcher provided with dual blade radial pins for preventing loss of sediments and a corer having the same. | 06-03-2010 |
Jung-Geun Jhin, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20100295087 | Light Emitting Diode with High Electrostatic Discharge and Fabrication Method Thereof - The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode. | 11-25-2010 |
Jung-Geun Jhin, Gwangju KR
| Patent application number | Description | Published |
|---|---|---|
| 20100065865 | METHOD OF FORMING NITRIDE SEMICONDUCTOR AND ELECTRONIC DEVICE COMPRISING THE SAME - A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm | 03-18-2010 |