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Jeong-Yeop Lee
Jeong-Yeop Lee US
| Patent application number | Description | Published |
|---|---|---|
| 20110070670 | PROCESS CONDITION EVALUATION METHOD FOR LIQUID CRYSTAL DISPLAY MODULE - A process condition evaluation method for a liquid crystal display module (LCM) includes: a first step of obtaining a threshold power measuring pattern, an analysis sample for a cell bonding status in an LCD fabrication process, and obtaining a lower substrate sample by separating an upper substrate from the threshold power measuring pattern; a second step of supplying voltages on a gate pad on the lower substrate sample with sequentially increasing a voltage level by a predetermined unit by using an electrical device, and obtaining a threshold current and a threshold voltage by measuring currents at a drain pad whenever voltage increased by a predetermined unit is applied to the gate pad; and a third step of obtaining threshold power based on the threshold current and the threshold voltage, and thereby evaluating process conditions of the LCM. | 03-24-2011 |
Jeong-Yeop Lee, Dalseo-Gu KR
| Patent application number | Description | Published |
|---|---|---|
| 20090289655 | Process condition evaluation method for liquid crystal display module - A process condition evaluation method for a liquid crystal display module (LCM) includes: a first step of obtaining a threshold power measuring pattern, an analysis sample for a cell bonding status in an LCD fabrication process, and obtaining a lower substrate sample by separating an upper substrate from the threshold power measuring pattern; a second step of supplying voltages on a gate pad on the lower substrate sample with sequentially increasing a voltage level by a predetermined unit by using an electrical device, and obtaining a threshold current and a threshold voltage by measuring currents at a drain pad whenever voltage increased by a predetermined unit is applied to the gate pad; and a third step of obtaining threshold power based on the threshold current and the threshold voltage, and thereby evaluating process conditions of the LCM. | 11-26-2009 |
| 20100165226 | Mother substrate for liquid crystal display device and method of fabricating the same - A mother substrate for a liquid crystal display device includes: a substrate; a plurality of unit array patterns on the substrate, each of the plurality of unit array patterns including a gate line, a data line crossing the gate line, a thin film transistor connected to the gate line and the data line and a pixel electrode connected to the thin film transistor; a first electrostatic discharge pattern surrounding the plurality of unit array patterns; a second electrostatic discharge pattern connected to the gate line and crossing the first electrostatic discharge pattern; and a third electrostatic discharge pattern connected to the data line and crossing the first electrostatic discharge pattern, the third electrostatic discharge pattern contacting the second electrostatic discharge pattern. | 07-01-2010 |
Jeong-Yeop Lee, Icheon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090261454 | CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A Ru | 10-22-2009 |
| 20090263967 | Method of forming noble metal layer using ozone reaction gas - A noble metal layer is formed using ozone (O | 10-22-2009 |
| 20100012989 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes. | 01-21-2010 |
| 20100046138 | ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities. | 02-25-2010 |
Jeong-Yeop Lee, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090273882 | CAPACITOR AND METHOD FOR FABRICATING THE SAME - A capacitor includes a first electrode, a dielectric layer, and a second electrode. The capacitor also includes a buffer layer formed over at least one of an interface between the first electrode and the dielectric layer and an interface between the dielectric layer and the second electrode, wherein the buffer layer includes a compound of a metal element from electrode materials of one of the first and second electrodes and a metal element from materials included in the dielectric layer. | 11-05-2009 |
| 20110128667 | SEMICONDUCTOR DEVICE INCLUDING CARBON-CONTAINING ELECTRODE AND METHOD FOR FABRICATING THE SAME - In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity. | 06-02-2011 |
| 20110128668 | ELECTRODE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING CAPACITOR - An electrode of a semiconductor device includes a TiCN layer and a TiN layer. A method for fabricating an electrode of a semiconductor device includes preparing a substrate, forming a TiCN layer, and forming a TiN layer. | 06-02-2011 |