| Patent application number | Description | Published |
|---|
| 20090154868 | SEMICONDUCTOR OPTO-ELECTRONIC INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME - Provided are semiconductor opto-electronic integrated circuits and methods of forming the same. The semiconductor opto-electronic integrated circuit includes: an optical waveguide disposed on a substrate and including an input terminal and an output terminal; an optical grating formed on the optical waveguide; and an optical active device disposed on the optical grating and receiving an optical signal from the optical waveguide through the optical grating to modulate the optical signal. | 06-18-2009 |
| 20100142878 | ABSORPTION MODULATOR AND MANUFACTURING METHOD THEREOF - An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure. | 06-10-2010 |
| 20100278477 | SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING OPTOELECTRONIC DEVICE FOR CHANGING OPTICAL PHASE - Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 m to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions. | 11-04-2010 |
| 20110051222 | ELECTRO-OPTIC DEVICE - An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration. | 03-03-2011 |
| 20110058764 | ELECTRO-OPTIC MODULATING DEVICE - Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction. | 03-10-2011 |
| 20110109955 | ELECTRO-OPTIC DEVICE - Provided is an electro-optic device. Sine the electro-optic device includes a plurality of first conductive type semiconductor layers and a plurality of depletion layers formed by a third semiconductor disposed between the plurality of first conductive type semiconductor layers, an electro-optic device optimized for a high speed and low power consumption can be provided. | 05-12-2011 |
| 20110135243 | ELECTRO-OPTIC DEVICE - Provided is an electro-optic device. The electro-optic device includes an input Y-branch comprising a first input branch and a second input branch, an output Y-branch comprising a first output branch and a second output branch, a first optical modulator and a second optical modulator connected in series between the first input branch and the first output branch, and a third optical modulator connecting the second input branch to the second output branch. The first optical modulator comprises a PIN diode, and each of the second optical modulator and the third optical modulator comprises a PN diode. | 06-09-2011 |
| 20120027336 | MACH-ZEHNDER MODULATOR - Provided is a Mach-Zehnder modulator. The Mach-Zehnder modulator comprises an input wave guide and an output wave guide arranged on a substrate, a first branch wave guide and a second branch wave guide connected in parallel between the input and output wave guides, and a connecting region configured to connect the first branch wave guide and the second branch wave guide. Each of the first and second branch wave guides comprises first doped regions doped with a first dopant and second doped regions doped with a second dopant having different conductivity from the first dopant, and the connecting region is doped with the first dopant and arranged between the first regions of the first and second branch wave guides. | 02-02-2012 |
