Patent application number | Description | Published |
20090154868 | SEMICONDUCTOR OPTO-ELECTRONIC INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME - Provided are semiconductor opto-electronic integrated circuits and methods of forming the same. The semiconductor opto-electronic integrated circuit includes: an optical waveguide disposed on a substrate and including an input terminal and an output terminal; an optical grating formed on the optical waveguide; and an optical active device disposed on the optical grating and receiving an optical signal from the optical waveguide through the optical grating to modulate the optical signal. | 06-18-2009 |
20100142878 | ABSORPTION MODULATOR AND MANUFACTURING METHOD THEREOF - An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure. | 06-10-2010 |
20100278477 | SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING OPTOELECTRONIC DEVICE FOR CHANGING OPTICAL PHASE - Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 m to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions. | 11-04-2010 |
20110051222 | ELECTRO-OPTIC DEVICE - An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration. | 03-03-2011 |
20110058764 | ELECTRO-OPTIC MODULATING DEVICE - Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction. | 03-10-2011 |
20110109955 | ELECTRO-OPTIC DEVICE - Provided is an electro-optic device. Sine the electro-optic device includes a plurality of first conductive type semiconductor layers and a plurality of depletion layers formed by a third semiconductor disposed between the plurality of first conductive type semiconductor layers, an electro-optic device optimized for a high speed and low power consumption can be provided. | 05-12-2011 |
20110135243 | ELECTRO-OPTIC DEVICE - Provided is an electro-optic device. The electro-optic device includes an input Y-branch comprising a first input branch and a second input branch, an output Y-branch comprising a first output branch and a second output branch, a first optical modulator and a second optical modulator connected in series between the first input branch and the first output branch, and a third optical modulator connecting the second input branch to the second output branch. The first optical modulator comprises a PIN diode, and each of the second optical modulator and the third optical modulator comprises a PN diode. | 06-09-2011 |
20120027336 | MACH-ZEHNDER MODULATOR - Provided is a Mach-Zehnder modulator. The Mach-Zehnder modulator comprises an input wave guide and an output wave guide arranged on a substrate, a first branch wave guide and a second branch wave guide connected in parallel between the input and output wave guides, and a connecting region configured to connect the first branch wave guide and the second branch wave guide. Each of the first and second branch wave guides comprises first doped regions doped with a first dopant and second doped regions doped with a second dopant having different conductivity from the first dopant, and the connecting region is doped with the first dopant and arranged between the first regions of the first and second branch wave guides. | 02-02-2012 |
20120063714 | ELECTRO-OPTIC DEVICE AND MACH-ZEHNDER OPTICAL MODULATOR HAVING THE SAME - Provided are an electro-optic device with a high modulation rate and a mach-zehnder optical modulator having the same. The electro-optic device includes a slap, a rip waveguide, a first impurity region, a second impurity region, and a third impurity region. The slap is disposed on a substrate. The rip waveguide includes a mesa extending in one direction on the slap and the slap disposed under the mesa. The first impurity region is disposed in the slap of one side of the mesa. The third impurity region is disposed in the slap of the other side of the mesa to oppose the first impurity region. The second impurity region is disposed in the rip waveguide between the first impurity region and the third impurity region. | 03-15-2012 |
20120148244 | OPTICAL NETWORK STRUCTURES FOR MULTI-CORE CENTRAL PROCESSOR UNIT - Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed. | 06-14-2012 |
20130161541 | TERAHERTZ WAVE GENERATOR AND METHOD OF GENERATING TERAHERTZ WAVE - Disclosed is a terahertz wave generator which includes a first light source outputting a first light having a first frequency; a second light source outputting a second light having a second frequency different from the first frequency; a second harmonic generation unit performing second harmonic conversion on the first and second lights to generate a third light and a fourth light; and a photomixer converting a mixing light of the third and fourth lights into a terahertz wave alternating signal and outputting a terahertz wave. | 06-27-2013 |
20130271335 | HORN ANTENNA APPARATUS - Disclosed is a horn antenna apparatus. The horn antenna apparatus includes a substrate; and a silicone antenna part bonded to the substrate and provided with a horn cavity having a radiating aperture part having one portion opened to the outside in a horizontal direction to a bonding surface. In accordance with the embodiment of the present invention, it is possible to easily implement the horn antenna apparatus capable of saving cost and providing the high gain using the photolithography and chemical etching method and to implement the terahertz transmitting and receiving module capable of saving cost and providing the high efficiency using the same. | 10-17-2013 |
20130299701 | PHOTO DETECTOR AND OPTICAL DEVICE - An optical device may include first and second lasers generating first and second laser beams; and a photo detector detecting the first and second laser beams. The optical detector comprises a substrate, a first impurity layer on the substrate, an absorption layer on the first impurity layer and a second impurity layer on the absorption layer. The absorption layer generates a terahertz by a beating of the first and second laser beams and has a thickness of less than | 11-14-2013 |
20130320215 | INTERCONNECTION APPARATUS AND METHOD USING TERAHERTZ WAVES - Disclosed herein is an interconnection apparatus and method using terahertz waves. The interconnection apparatus using terahertz waves according to the present invention includes a first terahertz wave generation unit for generating a first transmission terahertz wave, a center frequency of which is a first center frequency, using photomixing. A second terahertz wave generation unit generates a second transmission terahertz wave, a center frequency of which is a second center frequency different from the first center frequency. A first terahertz wave detection unit detects a first reception terahertz wave corresponding to the first transmission terahertz wave. A second terahertz wave detection unit detects a second reception terahertz wave corresponding to the second transmission terahertz wave. | 12-05-2013 |
20140061475 | APPARATUS AND METHOD FOR CONTACTLESS THICKNESS MEASUREMENT - A contactless thickness measuring apparatus is provided which includes an terahertz transmitter configured to receive the first optical path signal from the coupler and to generate a terahertz continuous wave using the first optical signal and an applied bias; an optical delay line configured to delay the second optical path signal output from the coupler; and an terahertz receiver configured to receive the terahertz continuous wave penetrating a sample and to detect an optical current using the terahertz continuous wave and the second optical path signal delayed. A thickness of the sample is a value corresponding to the optical current which phase value becomes a constant regardless of a plurality of measurement frequencies. | 03-06-2014 |
20140166881 | TERAHERTZ WAVE GENERATING MODULE AND TERAHERTZ WAVE DETECTING DEVICE INCLUDING THE SAME - A terahertz wave generating module includes a bidirectional light source which provides a first dual-mode beam in a first direction and a second dual-mode beam in a second direction; a forward lens unit which focuses the first dual-mode beam; a photomixer unit which converts the first dual-mode beam focused by the forward lens unit into a terahertz wave; a backward lens unit which focuses the second dual-mode beam; and a light output unit which uses the second dual-mode beam focused by the backward lens unit as a light signal, wherein the bidirectional light source, the forward lens unit, the photomixer unit, the backward lens unit, and the light output unit are integrated in a housing. | 06-19-2014 |
20140175306 | BEATING SIGNAL MONITORING MODULE, TERAHERTZ WAVE GENERATION DEVICE AND OPTICAL SIGNAL MONITORING DEVICE INCLUDING THE BEATING SIGNAL MONITORING MODULE - The inventive concept relates to a beating signal monitoring module and a terahertz wave generation device and an optical signal monitoring device that including the beating signal monitoring module. The beating signal monitoring module includes a nonlinear unit generating an optical signal including a FWM light in response to a beating signal generated from a first light and a second light; a filter unit separating the FWM light from the optical signal and outputting the separated FWM light; and a monitoring unit monitoring the beating signal using the separated FWM light. The beating signal monitoring module and a terahertz wave generation device and an optical signal monitoring device that including the beating signal monitoring module can effectively monitor a beating signal being generated by two lasers using a Four Wave Mixing signal. | 06-26-2014 |
20140183441 | APPARATUS FOR GENERATING/DETECTING TERAHERTZ WAVE USING GRAPHENE AND MANUFACTURING METHOD OF THE SAME - Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer on the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate in the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the metal layer. | 07-03-2014 |