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Jeong, Suwon

Ha Woong Jeong, Suwon KR

Patent application numberDescriptionPublished
20090085140FINGER TYPE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME - Provided are a finger type photodiode and a method of manufacturing the same, which can reduce noise by forming a shallow doping layer. The finger type photodiode includes a bottom substrate supporting layers to be formed thereon, an epitaxial layer formed on the bottom substrate, a finger doping layer formed in a finger shape on a top surface of the epitaxial layer, and a shallow doping layer formed with a shallow depth on an externally exposed top surface of the epitaxial layer and a top surface of the finger doping layer. Since the dangling bond generated on the epitaxial layer and the finger doping layer is reduced, noise can be reduced, thereby improving the light efficiency and reliability of the photodiode.04-02-2009

Jae-Kyeong Jeong, Suwon KR

Patent application numberDescriptionPublished
20080277657THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DISPLAY USING THE SAME - Thin film transistors and organic light emitting displays using the same are provided. The thin film transistor may include a substrate, a semiconductor layer, a gate electrode, and source/drain electrodes on the substrate. The semiconductor layer is composed of a P-type semiconductor layer obtained by diffusing phosphorus into a zinc oxide semiconductor. The phosphorus is doped in the semiconductor layer to a concentration ranging from about 1×1011-13-2008
20080290343ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device. The organic light-emitting display device according to an embodiment of the present invention utilizes an N-type driving transistor, and therefore it has a drain electrode of a driving transistor electrically connected to a cathode electrode of an organic light-emitting diode, wherein the organic light-emitting display device includes a thin metal film between the cathode electrode and the organic light-emitting layer.11-27-2008

Jae Yoo Jeong, Suwon KR

Patent application numberDescriptionPublished
20110133220LIGHT EMITTING DIODE, METHOD FOR FABRICATING PHOSPHOR LAYER, AND LIGHTING APPARATUS - A light emitting diode includes: a light emitting diode chip including a substrate and a light emission structure disposed on the substrate; and a phosphor layer formed to cover at least one surface of a diode upper surface and a diode lower surface, when a surface formed by the light emitting diode chip, when viewed from above the light emission structure, is defined as the diode upper surface and a surface formed by the light emitting diode chip, when viewed from below the substrate is defined as the diode lower surface. The phosphor layer is formed in a manner such that the phosphor layer does not deviate from the diode upper surface or the diode lower surface and has a flat surface parallel to the diode upper surface or the diode lower surface and a curved surface connecting the flat surface to corners of the diode upper surface or the diode lower surface.06-09-2011
20110254039LIGHT EMITTING DIODE PACKAGE, LIGHTING APPARATUS HAVING THE SAME, AND METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PACKAGE - A light emitting diode (LED) package, a lighting apparatus including the same, and a method for manufacturing an LED package are disclosed. The LED package includes: a package substrate; an LED chip mounted on the package substrate; and a wavelength conversion layer formed to cover at least a portion of an upper surface of the LED chip when a surface formed by the LED chip when viewed from above is defined as the upper surface of the LED chip, wherein the wavelength conversion layer is formed so as not to exceed the area of the upper surface of the LED chip and includes a flat surface parallel to the upper surface of the LED chip and curved surfaces connecting the corners of the upper surface of the LED chip.10-20-2011

Ji Hun Jeong, Suwon KR

Patent application numberDescriptionPublished
20110141655MULTILAYER CERAMIC CAPACITOR - Disclosed is multilayer ceramic capacitor. The multilayer ceramic capacitor includes a capacitive part including dielectric layers and first and second internal electrodes alternately laminated therein, wherein the dielectric layers include first ceramic particles having an average particle size of 0.1 μm to 0.3 μm, and one set of ends of the first internal electrodes and one set of ends of the second internal electrodes are exposed in a lamination direction of the dielectric layers, a protective layer formed on at least one of top and bottom surfaces of the capacitive part, including second ceramic particles and having a porosity of 2% to 4%, wherein an average particle size ratio of the second ceramic particles to the first ceramic particles ranges from 1.1 to 1.3; and first and second external electrodes electrically connected to the first and second internal electrodes exposed in the lamination direction of the dielectric layers.06-16-2011
20110141659MULTILAYER CERAMIC CAPACITOR - There is provided a multilayer ceramic capacitor. The multilayer ceramic capacitor includes an effective layer including inner electrodes and dielectric layers that are alternately stacked, and a protection layer formed on each of top and bottom surfaces of the effective layer, the protection layer being formed by stacking dielectric layers. The effective layer has an outside part, an inside part and an outside part in that order along a stack direction, the inner electrodes of the outside parts have a smaller thickness than that of the inner electrodes of the inside part, and the outside parts have a thickness 0.1 to 0.5 times that of the protection layer.06-16-2011
20110141660MULTILAYER CERAMIC CAPACITOR - Disclosed is a multilayer ceramic capacitor. The multilayer ceramic capacitor includes a capacitive part including a plurality of dielectric layers and first and second internal electrodes that are laminated in an alternating manner, wherein one set of ends of the first internal electrodes and the other set of ends of the second internal electrodes are exposed in a lamination direction in which the dielectric layers are laminated, a protective layer formed on at least one of top and bottom surfaces of the capacitive part, including a plurality of pores having an average pore size of 0.5 μm to 3 μm, and having a porosity of 2% to 10%, and first and second external electrodes electrically connected to the first and second internal electrodes exposed in the lamination direction of the dielectric layers.06-16-2011
20110149469MULTILAYER CERAMIC CAPACITOR AND METHOD OF FABRICATING THE SAME - There is provided a multilayer ceramic capacitor including: a capacitor main body formed by stacking a dielectric layer having a thickness of td and alternately stacking more than one opposing pair of a first internal electrode having a thickness of to and a second internal electrode having the same thickness as the first internal electrode, and having the dielectric layer therebetween; and a protective layer formed by stacking a second dielectric layer on at least one of an upper surface and a lower surface of the capacitor main body so that a dielectric material layer has a thickness of tc, wherein when a thickness from an end of a region where the first internal electrode and the second internal electrode oppose each other to side and end surfaces of the capacitor main body is a, it satisfies the following Equation 1 and a method of fabricating a multilayer ceramic capacitor are provided.06-23-2011
20110157765MULTILAYER CERAMIC CAPACITOR AND FABRICATING METHOD THEREOF - A multilayer ceramic capacitor includes a capacitor body in which inner electrodes and dielectric layers are alternately laminated, and a length difference rate (D) of the inner electrodes is 7% or less. The length difference rate (D) is defined by D={L−1}/L×100, where L is a maximum length of the inner electrode, and l is a minimum length of the inner electrode.06-30-2011

Jong-Han Jeong, Suwon KR

Patent application numberDescriptionPublished
20080277657THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DISPLAY USING THE SAME - Thin film transistors and organic light emitting displays using the same are provided. The thin film transistor may include a substrate, a semiconductor layer, a gate electrode, and source/drain electrodes on the substrate. The semiconductor layer is composed of a P-type semiconductor layer obtained by diffusing phosphorus into a zinc oxide semiconductor. The phosphorus is doped in the semiconductor layer to a concentration ranging from about 1×1011-13-2008
20080290343ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device. The organic light-emitting display device according to an embodiment of the present invention utilizes an N-type driving transistor, and therefore it has a drain electrode of a driving transistor electrically connected to a cathode electrode of an organic light-emitting diode, wherein the organic light-emitting display device includes a thin metal film between the cathode electrode and the organic light-emitting layer.11-27-2008

Kie Youn Jeong, Suwon KR

Patent application numberDescriptionPublished
20120094564STAINPROOFING METHOD OF FABRIC - A method for anti-stain treatment of fabric is disclosed. The method for anti-stain treatment of fabric includes: immersing fabric in an aqueous solution containing a telomerized perfluoroalkyl acrylate copolymer, and a crosslinking agent, such as an isocyanate crosslinking agent; dehydrating the immersed fabric; drying the dehydrated fabric; heat treating the dried fabric; and coating the heat-treated fabric with a flame retardant, such as an acrylic flame retardant, to provide flame retardancy. The method provides a car seat fabric having superior stain resistance, water repellency and oil repellency without degradation of other properties required for the car seat fabric, such as flame retardancy, lightfastness, frictional coloration, or the like. The method is widely applicable to commercially applicable car seat fabrics, including flat woven, flat tricot, double raschel, or the like.04-19-2012

Kye Jin Jeong, Suwon KR

Patent application numberDescriptionPublished
20100221894METHOD FOR MANUFACTURING NANOWIRES BY USING A STRESS-INDUCED GROWTH - Provided is a method for manufacturing a nanowire using stress-induced growth. The method includes: providing a substrate with an intermediate layer formed thereon; forming thin film on the intermediate layer, wherein the thin film made of material having more than 2×1009-02-2010

Moon Suk Jeong, Suwon KR

Patent application numberDescriptionPublished
20080303622SPIRAL INDUCTOR - There is provided a spiral inductor including an insulation board formed into a flat-plate shape; a conductive pattern having a spiral shape and formed at least one surface of the insulation board, wherein the conductive pattern varies in line width according to a distance from one end of the conductive pattern forming a spiral.12-11-2008
20090039977BALUN TRANSFORMER - A balun transformer includes a first conductive pattern having one end provided as an input/output port of an unbalanced signal, a second conductive pattern electromagnetically coupled to the first conductive pattern and having both ends provided as input/output ports of a balanced signal, and a first variable capacitor connected between a ground part and a middle part of an electrical length of the second conductive pattern.02-12-2009
20090085670MULTIBAND OUTPUT IMPEDANCE MATCHING CIRCUIT HAVING PASSIVE DEVICES, AMPLIFIER INCLUDING MULTIBAND INPUT IMPEDANCE MATCHING CIRCUIT HAVING PASSIVE DEVICES, AND AMPLIFIER INCLUDING MULTIBAND INPUT/OUTPUT IMPEDANCE MATCHING CIRCUIT HAVING PASSIVE DEVICES - Disclosed are a multiband output impedance matching circuit having passive devices, an amplifier including a multiband input impedance matching circuit having passive devices, and an amplifier including a multiband input/output impedance matching circuit having passive devices, which can be miniaturized without a separate output terminal buffer and reduce current consumption by using the passive devices.04-02-2009
20090213768WIRELESS COMMUNICATION SYSTEM FOR TIME DIVISION DUPLEX - Disclosed is a wireless communication system applicable to a time-division duplex transceiver system. The time-division duplex mobile communication system can achieve miniaturization, low power consumption and low costs by using a frequency conversion circuit including a mixer and an intermediate frequency (IF) circuit for both transmitter and receiver, and also can cope with multi-band, multi-application systems by using a broadband amplifier, a variable IF filter and a variable gain amplifier.08-27-2009
20100308920WIDE-BAND AMPLIFIER CIRCUIT WITH IMPROVED GAIN FLATNESS - There is provided a wide-band amplifier circuit with improved gain flatness. The wide-band amplifier circuit includes a first resonant load unit connected to an operating power terminal, providing a preset first load, and forming a preset first resonant point, a second resonant load unit connected to the operating power terminal, providing a preset second load, and forming a second resonant point set to a frequency different from the first resonant point; a first amplification unit receiving operating power via the first load of the first resonant load unit, having an amplification band characteristic determined according to the first resonant point of the first resonant load unit, and amplifying an input signal; and a second amplification unit receiving operating power via the second load, having an amplification band characteristic determined according to the second resonant point, and amplifying an input signal from the first amplification unit.12-09-2010
20110037522ACTIVE BALUN WITH STACKED STRUCTURE - An active balun with a stacked structure includes: a first amplification unit including a first transistor having a first terminal connected with a first input terminal, a second terminal connected with a power voltage terminal, and a third terminal connected with an output terminal; a second amplification unit including a second transistor having a first terminal connected with a second input terminal, a second terminal connected with the output terminal, and a third terminal connected with a ground; and a capacitance matching unit connected between the first terminal and the third terminal of the first transistor and having a pre-set matching capacitance.02-17-2011

Patent applications by Moon Suk Jeong, Suwon KR

Yeong Hyo Jeong, Suwon KR

Patent application numberDescriptionPublished
20100045851Method of controlling mechanical shutter - There is provided a method of controlling a mechanical shutter that can ensure faster shutter speed by preventing a reduction of the shutter speed of the mechanical shutter caused by signal loss and physical loss caused by inertia. A method of controlling a mechanical shutter according to an aspect of the invention may include performing a row reset operation to remove image information remaining in an image sensor according to input of a trigger event generated by a user to acquire an image; transmitting a shutter close operation start signal for a mechanical shutter to the mechanical shutter before the row reset operation ends after a predetermined delay time from a time when the row reset operation starts; exposing the imager sensor right after the row reset operation ends; and fully closing the mechanical shutter.02-25-2010

Younsuk Jeong, Suwon KR

Patent application numberDescriptionPublished
20110156962MOBILE TERMINAL - According to an embodiment of the present invention, the mobile terminal includes, a terminal body, a printed circuit board (PCB) mounted in the interior of the terminal body, and an internal antenna connected to the PCB, and configured to transmit and receive signals, wherein the internal antenna includes a ground formed on the PCB, a radiator connected to the ground and configured to be operable at a first band, and to feed the signals to the PCB, and a ground extension part extending in at least one direction from the ground, and configured to expand a ground surface of the ground in order for the internal antenna to include a second band, which is lower than a first band, as an operation band.06-30-2011