| Patent application number | Description | Published |
|---|
| 20100149502 | Method of detecting reticle errors - A method of detecting reticle error may include using an optical source of an exposure unit to cause light to be incident on a reticle installed in the exposure unit, and detecting the reticle error using only 0 | 06-17-2010 |
| 20100190340 | Methods of forming fine patterns using a nanoimprint lithography - In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree. | 07-29-2010 |
| 20100230864 | Nanoimprint Lithography Template and Method of Fabricating Semiconductor Device Using the Same - Nanoimprint lithography templates and methods of fabricating semiconductor devices using the nanoimprint lithography templates are provided. The nanoimprint lithography template includes a transparent substrate having a first refractive index, a stamp pattern on a surface on the transparent substrate and having inclined sidewalls, and a coating layer formed on the inclined sidewalls of the stamp pattern, the coating layer having a second refractive index higher than the first refractive index. | 09-16-2010 |
| 20110007329 | Methods of inspecting structures - A method of inspecting a structure. The method includes preparing preliminary spectrums of reference diffraction intensities according to critical dimensions of reference structures, obtaining a linear spectrum from the preliminary spectrums in a set critical dimension range, radiating light to respective measurement structures formed on a substrate, measuring measurement diffraction intensities of the light diffracted by the measurement structures, and obtaining respective critical dimensions of the measurement structures from the measurement diffraction intensities using the linear spectrum. | 01-13-2011 |
| 20110116705 | METHOD OF MEASURING FOCAL VARIATIONS OF A PHOTOLITHOGRAPHY APPARATUS AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE FOCAL VARIATIONS MEASURING METHOD - Provided are a method of measuring focal variations of a photolithography apparatus and a method of fabricating a semiconductor device using the method. The method of measuring the focal variations of the photolithography apparatus includes loading a photomask and a wafer into the photolithography apparatus. The photomask has an optical pattern, and the wafer has a photoresist layer on a top surface thereof. An image of the optical pattern is transferred to the photoresist layer using ultraviolet (UV) light. The photoresist layer is baked. The photoresist layer is inspected. Inspection results of the photoresist layer are analyzed. The inspection of the photoresist layer includes irradiating light for measurement to the entire surface of the wafer. Light reflected and diffracted by the wafer is collected to form an optical image. The analysis of the inspection results of the photoresist layer includes analyzing optical information on the optical image. | 05-19-2011 |
| 20110119644 | METHODS OF ARRANGING MASK PATTERNS AND ASSOCIATED APPARATUS - Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of a second pattern to image intensity. In some methods of arranging mask patterns, a distribution of functions h(ξ−x) is obtained which represents the contribution of a second pattern to image intensity on a first pattern. Neighboring regions of the first pattern are discretized into finite regions, and the distribution of the functions h(ξ−x) is replaced with representative values | 05-19-2011 |
| 20110128518 | REFLECTIVE RETICLE CHUCK, REFLECTIVE ILLUMINATION SYSTEM INCLUDING THE SAME, METHOD OF CONTROLLING FLATNESS OF REFLECTIVE RETICLE USING THE CHUCK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE CHUCK - Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion. | 06-02-2011 |
| 20110183239 | Photolithography Mask, Blank Photomask, Reflective Photomask, and Methods of Manufacturing the Same - Photolithography masks include an optically transparent substrate having a plurality of fiducial position aligning marks on sidewalls thereof. A reflective layer is also provided on an upper surface of the optically transparent substrate. The reflective layer includes a composite of a lower reflective layer of a first material and an upper reflective layer of a second material different from the first material, on the lower reflective layer. The lower reflective layer may include molybdenum and the upper reflective layer may include silicon. An anti-reflective layer is provided on the reflective layer. | 07-28-2011 |
