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| 20080237566 | Phase change memory device and method of fabricating the same - A phase change memory device and method of manufacturing the same is provided. A first electrode having a first surface is provided on a substrate. A second electrode having a second surface at a different level from the first surface is on the substrate. The second electrode may be spaced apart from the first electrode. A third electrode may be formed corresponding to the first electrode. A fourth electrode may be formed corresponding to the second electrode. A first phase change pattern may be interposed between the first surface and the third electrode. A second phase change pattern may be interposed between the second surface and the fourth electrode. Upper surfaces of the first and second phase change patterns may be on the same plane | 10-02-2008 |
| 20090057644 | Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devices - A phase-change memory unit includes a lower electrode on a substrate, a phase-change material layer pattern including germanium-antimony-tellurium (GST) and carbon on the lower electrode, a transition metal layer pattern on the phase-change material layer pattern, and an upper electrode on the first transition metal layer pattern. The phase-change memory unit may have good electrical characteristics. | 03-05-2009 |
| 20090243117 | CONTACT STRUCTURE, A SEMICONDUCTOR DEVICE EMPLOYING THE SAME, AND METHODS OF MANUFACTURING THE SAME - A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern. | 10-01-2009 |
| 20100144135 | Method of manufacturing a phase changeable memory unit - A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer. | 06-10-2010 |
| 20100176365 | RESISTANCE VARIABLE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - A resistance variable memory device includes at least one bottom electrode, a first insulating layer containing a trench which exposes the at least one bottom electrode, and a resistance variable material layer including respective first and second portions located on opposite sidewalls of the trench, respectively, where the first and second portions of the resistance variable material layer are electrically connected to the at least one bottom electrode. The device further includes a protective layer covering the resistance variable material layer within the trench, and a second insulating layer located within the trench and covering the protective layer within the trench | 07-15-2010 |
| 20110155985 | PHASE CHANGE STRUCTURE, AND PHASE CHANGE MEMORY DEVICE - A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material. | 06-30-2011 |
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| 20110114990 | LIGHT EMITTING DIODE HAVING ELECTRODE EXTENSIONS FOR CURRENT SPREADING - An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts. | 05-19-2011 |
| 20110140160 | LIGHT EMITTING DIODE HAVING ELECTRODE PADS - The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. | 06-16-2011 |
| 20110156086 | LIGHT EMITTING DIODE HAVING ELECTRODE EXTENSIONS - An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a mesa structure arranged on the lower contact layer, the mesa structure including an active layer and an upper contact layer, a first electrode pad arranged on the lower contact layer, a second electrode pad arranged on the mesa structure, a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad, and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad. In addition, the first upper extension and the second upper extension extend from the second electrode pad to enclose the first lower extension and the second lower extension, and the third upper extension extends to a region between the first lower extension and the second lower extension. | 06-30-2011 |
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| 20090062949 | AUDIO DATA PLAYER AND METHOD OF CREATING PLAYBACK LIST THEREOF - An audio data player may include a storage unit for storing one of more sound source files containing tag information, and an extraction unit for extracting one piece of information among the tag information (e.g., information on artist, album, title, year, genre, and user preference) of the stored sound source files. A control unit may provide the tag information of each sound source file extracted by the extraction unit in the form of a list, receiving one element of the provided list, and create a playback list. | 03-05-2009 |
| 20090085874 | TOUCH SCREEN DEVICE AND CHARACTER INPUT METHOD THEREIN - A device, computer program product and method of inputting a character in a touch screen device, in which a touch area is partitioned into a plurality of array positions, and one or more letters are assigned to each of the partitioned array positions. The method comprises the steps of: partitioning a touch area of the touch panel into a plurality of array positions and assigning one or more characters to each of the partitioned array positions; sensing an expansion event of selecting one among the array positions; dividing the touch area into a plurality of selection positions and assigning the characters assigned to the array position selected by the expansion event to the respective selection positions; sensing a selection event of selecting one among the selection positions; and recognizing the character assigned to the selection position selected by the selection event as an input character. | 04-02-2009 |
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| 20090031520 | Upright vacuum cleaner - A vacuum cleaner including a sterilizing unit is provided. The sterilizing unit includes a hot air circulating duct and an air passage switching part. The hot air circulating duct is disposed between a motor chamber and an air inflow part of the dust separating unit to guide air from the motor chamber to the air inflow part of the dust separating unit. The air passage switching part is disposed at a place where the air inflow part, the suction hose and the hot air circulating duct intersect. The air passage switching part is movable between a cleaning position and a sterilizing position to switch a flow of air, the cleaning position being a position that blocks off between the air inflow part and the hot air circulating duct and the sterilizing position being a position that blocks off between the air inflow part and the suction hose. | 02-05-2009 |
| 20090044371 | Vacuum cleaner for use in both upright form and canister form - A vacuum cleaner for use in both an upright form and a canister form, which can mount and dismount a cleaner body to and from a suction nozzle assembly is disclosed. The vacuum cleaner includes a suction nozzle assembly to draw in dust or dirt along with air while moving along a surface to be cleaned; a cleaner body having a dust separating unit to separate and collect the dust or dirt from the air drawn in from the surface to be cleaned; a supporting unit hingedly joined to the suction nozzle assembly to support a lower part of the cleaner body to communicate with the suction nozzle assembly; and a locking unit to detachably lock the lower part of the cleaner body to the supporting unit. | 02-19-2009 |
| 20100071152 | Vacuum cleaner - A vacuum cleaner is provided that includes a cleaner body; a dust separating apparatus fixed to the cleaner body; a first dust receptacle detachably attached to the cleaner body on a bottom portion of the dust separating apparatus to collect large particle dust; a second dust receptacle detachably attached to the cleaner body on a bottom portion of the first dust receptacle to collect fine particle dust; and a locking device having a first position in which the dust separating apparatus is closely contacted to the first and second dust receptacles, and a second position in which the dust separating apparatus is spaced apart from the first and second dust receptacles at a predetermined interval. The second dust receptacle is detached from the first dust receptacle at the second position, and is detached from the cleaner body after the first dust receptacle is disengaged from the cleaner body. | 03-25-2010 |
| 20100281648 | VACUUM CLEANER HAVING DUAL LOCKING STRUCTURE - A vacuum cleaner having a dual locking structure is provided. The vacuum cleaner includes a brush assembly, a main body connected to the brush assembly, a dust bin arranged on the main body, a fastening unit to move the dust bin to a fastened or unfastened state, and a filter casing. The dust bin includes one or more first locking holes and the main body includes one or dust bin locking members to be engaged with the first locking holes so that the dust bin, in an unfastened state, is removably retained in the main body. The filter casing includes one or more filter casing locking portions and the main body includes one or more filter casing locking members to be engaged with the filter casing locking portions so that the filter casing in the unfastened state is removably retained in the main body. | 11-11-2010 |
| 20100313378 | UPRIGHT-TYPE VACUUM CLEANER - An upright-type vacuum cleaner is provided. The upright-type vacuum cleaner includes a cleaner body comprising a motor chamber in which a suction motor is mounted, a brush assembly connected to the cleaner body, a discharge filter unit mounted on a first surface of the cleaner body, to filter out impurities from an air stream discharged from the suction motor, and a cord reel assembly mounted on a second surface of the cleaner body and having a power cord. The discharge filter unit includes a filter member mountable and demountable to and from the cleaner body by a user outside the vacuum cleaner, and at least a part of an air stream filtered by the filter member shifts a direction to pass through the cord reel assembly. | 12-16-2010 |
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| 20090004773 | METHODS OF FABRICATING MULTI-LAYER PHASE-CHANGEABLE MEMORY DEVICES - A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed. | 01-01-2009 |
| 20090250682 | PHASE CHANGE MEMORY DEVICE - Provided is a phase change memory device. The phase change memory device includes a first electrode and a second electrode. A phase change material pattern is interposed between the first and second electrodes. A phase change auxiliary pattern is in contact with at least one side of the phase change material pattern. The phase change auxiliary pattern includes a compound having a chemical formula expressed as D | 10-08-2009 |
| 20100019216 | MULTI-LAYER PHASE-CHANGEABLE MEMORY DEVICES - A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed. | 01-28-2010 |
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| 20090035514 | Phase change memory device and method of fabricating the same - A method of fabricating a phase change memory device includes forming an opening in a first layer, forming a phase change material in the opening and on the first layer, heating the phase change material to a first temperature that is sufficient to reflow the phase change material in the opening, wherein the first temperature is less than a melting point of the phase change material, and, after heating the phase change material to the first temperature, patterning the phase change material to define a phase change element in the opening. | 02-05-2009 |
| 20110031461 | PHASE CHANGE MEMORY DEVICE - A method of fabricating a phase change memory device includes forming an opening in a first layer, forming a phase change material in the opening and on the first layer, heating the phase change material to a first temperature that is sufficient to reflow the phase change material in the opening, wherein the first temperature is less than a melting point of the phase change material, and, after heating the phase change material to the first temperature, patterning the phase change material to define a phase change element in the opening. | 02-10-2011 |
