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Jeon, Suwon

Chung Bae Jeon, Suwon KR

Patent application numberDescriptionPublished
20110133220LIGHT EMITTING DIODE, METHOD FOR FABRICATING PHOSPHOR LAYER, AND LIGHTING APPARATUS - A light emitting diode includes: a light emitting diode chip including a substrate and a light emission structure disposed on the substrate; and a phosphor layer formed to cover at least one surface of a diode upper surface and a diode lower surface, when a surface formed by the light emitting diode chip, when viewed from above the light emission structure, is defined as the diode upper surface and a surface formed by the light emitting diode chip, when viewed from below the substrate is defined as the diode lower surface. The phosphor layer is formed in a manner such that the phosphor layer does not deviate from the diode upper surface or the diode lower surface and has a flat surface parallel to the diode upper surface or the diode lower surface and a curved surface connecting the flat surface to corners of the diode upper surface or the diode lower surface.06-09-2011
20110254039LIGHT EMITTING DIODE PACKAGE, LIGHTING APPARATUS HAVING THE SAME, AND METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PACKAGE - A light emitting diode (LED) package, a lighting apparatus including the same, and a method for manufacturing an LED package are disclosed. The LED package includes: a package substrate; an LED chip mounted on the package substrate; and a wavelength conversion layer formed to cover at least a portion of an upper surface of the LED chip when a surface formed by the LED chip when viewed from above is defined as the upper surface of the LED chip, wherein the wavelength conversion layer is formed so as not to exceed the area of the upper surface of the LED chip and includes a flat surface parallel to the upper surface of the LED chip and curved surfaces connecting the corners of the upper surface of the LED chip.10-20-2011

Dong Min Jeon, Suwon KR

Patent application numberDescriptionPublished
20100308366NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ELECTRODES OF A MULTILAYER STRUCTURE - A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.12-09-2010

Patent applications by Dong Min Jeon, Suwon KR

Eun Kyung Jeon, Suwon KR

Patent application numberDescriptionPublished
20110198749Semiconductor chip package and method of manufacturing the same - Provided are a semiconductor chip package and a method of manufacturing the same. The semiconductor chip package includes a semiconductor chip comprising a chip pad, and a rerouting layer disposed on the semiconductor chip and including a metal interconnection electrically connected to the chip pad and a partial oxidation region formed by the oxidation of metal and insulating the metal interconnection.08-18-2011

Jin-Hwan Jeon, Suwon KR

Patent application numberDescriptionPublished
20100134464LIQUID CRYSTAL DISPLAY - A liquid crystal display (LCD) device includes: a liquid crystal panel; a plurality of fluorescent lamps disposed under the liquid crystal panel, supplying light to the liquid crystal panel, and having electrodes provided at both ends thereof; a balance printed circuit board (PCB) disposed at both ends of the plurality of fluorescent lamps and including a clip fastened to be electrically connected with the electrodes of the fluorescent lamps; a power supply line printed on the balance PCB so as to be electrically connected to the clip and supplying power to the electrodes of the fluorescent lamps; a first voltage induction line printed with a first area on the balance PCB at a first interval from the power supply line; a second voltage induction line printed with a second area on the balance PCB at a second interval from the power supply line; and a light emitting diode (LED) mounted on the balance PCB and having an anode connected to the first voltage induction line and a cathode connected to the second voltage induction line, wherein the first area is larger than the second area, the first interval is smaller than the second interval, the power supply line and the first voltage induction line form a first capacitor, and the power supply line and the second voltage induction line form a second capacitor.06-03-2010

Jong Beom Jeon, Suwon KR

Patent application numberDescriptionPublished
20100079038PIEZOELECTRIC VIBRATOR AND ELECTRODE STRUCTURE OF PIEZOELECTRIC VIBRATOR - Provided are a piezoelectric vibrator and an electrode structure of the piezoelectric vibrator. The piezoelectric vibrator includes a piezoelectric material vibrating according to an electric signal, first and second electrode structures formed on the upper surface and the undersurface of the piezoelectric material, and including first to fourth layers sequentially stacked thereon, respectively. The first and third layers are formed of an alloy including Cr. The second and fourth layers are formed of Ag or an alloy including Ag.04-01-2010

Jong Yeol Jeon, Suwon KR

Patent application numberDescriptionPublished
20090013519METHOD FOR MANUFACTURING CRYSTAL DEVICE - A method for manufacturing a crystal device is provided. The method includes providing a package wafer including a plurality of internal and external connection terminals each having top and bottom ends respectively exposed to top and bottom surfaces of the package wafer; forming a height control member on the top end of the internal and external connection terminal and bonding one end of a crystal blank including an excitation electrode on the height control member; placing a bottom surface of a cap wafer having a cavity, which is open downward, on the top surface of the package wafer to which the crystal blank is mounted, and anodically bonding the package wafer with the cap wafer; and cutting the package wafer and the cap wafer in a direction across a bonding line formed by the bonding of the package wafer and the cap wafer to provide a plurality of crystal resonator that are individually separated.01-15-2009

Kye Jin Jeon, Suwon KR

Patent application numberDescriptionPublished
20100096071METHOD FOR MANUFACTURING HYDROGEN SENSORS USING Pd NANO WIRE - Disclosed is a method for manufacturing a hydrogen sensor using Pd nano-wires. The method includes steps of forming an external electrode pattern on a substrate applying a first resin layer to the substrate and forming a resin layer nano-channel pattern; depositing Pd on the substrate having the nano-channel pattern, by sputtering, and removing the first resin layer to form Pd nano-wires; applying a second resin layer to the substrate having the Pd nano-wires, and forming a resin layer pattern on the external electrode pattern, at opposing ends of the Pd nano-wires, and at predetermined positions between the external electrode pattern and the opposing ends of the Pd nano-wires; and depositing conductive metal on the resin layer pattern and removing the resin layer pattern, thereby electrically connecting the external electrode pattern to the Pd nano-wires.04-22-2010

Sang Youl Jeon, Suwon KR

Patent application numberDescriptionPublished
20100060612OPTO-TOUCH SCREEN - There is provided an opto-touch screen including: an opto-touch panel including an infrared phosphor material emitting light when exposed to infrared light; a sensor part disposed at a side of the opto-touch panel to detect the light emitted from the opto-touch panel.03-11-2010
20100118364THREE-DIMENSIONAL SPACE SCANNER - A Three Dimensional (3D) space scanner can obtain spatial data by scanning a mobile object not only in the horizontal direction but also in the vertical direction using a mirror that is driven to rotate as well as to tilt.05-13-2010

Woo Chul Jeon, Suwon KR

Patent application numberDescriptionPublished
20100244713ILLUMINATION APPARATUS USING LIGHT EMITTING DIODE - An illumination apparatus using a light emitting diode is directly driven by an alternating current (AC) power source, displays colors and simultaneously controls a color's brightness level. The illumination apparatus includes a power terminal unit to which an AC power source is applied; a variable current unit connected to one end of the power terminal unit, dividing current provided from the power terminal unit into a plurality of current levels, and including first, second and third variable current units controlling the plurality of divided current levels, respectively; and a light emitting unit including red, green, and blue light emitting units, respectively disposed between the first variable current unit and the other end of the power terminal unit, between the second variable current unit and the other end of the power terminal unit, and between the third variable current unit and the other end of the power terminal unit.09-30-2010
20110233520SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor device including a base substrate; a semiconductor layer formed on the base substrate and having a mesa protrusion including a receiving groove; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer, the source electrode having a source leg and the drain electrode having a drain leg; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part received into the receiving groove. The mesa protrusion has a superlattice structure including at least one trench at an interface between the mesa protrusion and the source electrode and between the mesa protrusion and the drain electrode, respectively, and the source leg and the drain leg are received in the trench.09-29-2011
20110233612SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.09-29-2011
20110233613SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove.09-29-2011
20110233623SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer having a receiving groove, a protrusion part, a first carrier injection layer, at least two insulating patterns, and a second carrier injection layer provided on the base substrate, the insulating patterns being disposed to traverse the first carrier injection layer and the second carrier injection layer being spaced apart from the first carrier injection layer and disposed on a lower portion of the protrusion part; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part recessed into the receiving groove, wherein a lowest portion of the receiving groove contacts an uppermost layer of the first carrier injection layer or is disposed above the uppermost layer thereof, and an insulating pattern, disposed at an innermost portion of the semiconductor layer among the insulating patterns, traverses the first carrier injection layer and is disposed at the outside of both sides of the receiving groove in a thickness direction thereof.09-29-2011

Young Jae Jeon, Suwon JP

Patent application numberDescriptionPublished
20110278960LINEAR VIBRATOR - There is provided a linear vibrator including: a housing having an internal space formed therein; a magnetic field unit including a yoke disposed in the internal space, a magnet mounted on a surface of the yoke, and a yoke plate formed on a surface opposite to a contact surface between the magnet and the yoke; a coil interacting with the magnetic field unit to allow the magnetic field unit to move linearly when power is applied thereto, and forming a movement space for the magnetic field unit; magnetic fluid provided in a clearance between the magnetic field unit and the coil and alleviating contact impact between the magnetic field unit and the coil; and a contact avoiding unit formed on at least one of the magnetic field unit and the coil and avoiding a contact between the magnetic field unit and the coil due to an external impact.11-17-2011