Patent application number | Description | Published |
20090159870 | LIGHT EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted. | 06-25-2009 |
20090159871 | LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies. | 06-25-2009 |
20090159910 | LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process. | 06-25-2009 |
20090294756 | LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies. | 12-03-2009 |
20090298213 | LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies. | 12-03-2009 |
20100140653 | LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process. | 06-10-2010 |
20100273331 | METHOD OF FABRICATING A NANO/MICRO STRUCTURE - A method of fabricating a nano/micro structure comprising the following steps is provided. First, a film is provided and then a mixed material comprising a plurality of ball-shape particles and a filler among the ball-shape particles is formed on the film. Next, the ball-shape particles are removed by the etching process, the solvent extraction process or the like, such that a plurality of concaves is formed on the surface of the filler, which serves as a nano/micro structure of the film. | 10-28-2010 |
20100295017 | LIGHT EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted. | 11-25-2010 |
20120189240 | Wavelength Division Multiplexing and Optical Modulation Apparatus - A wavelength division multiplexing and optical modulation apparatus includes at least two modulation region-added grating-assisted cross-state directional coupler units and a modulation region-added cross-state directional coupler. The modulation region-added grating-assisted cross-state directional coupler units and the modulation region-added cross-state directional coupler unit are connected to one another in serial. Each of the modulation region-added grating-assisted cross-state directional coupler units each includes a modulation region-added cross-state directional coupler, a grating and a modulation region. The modulation region-added cross-state directional coupler unit includes an output waveguide, an input waveguide and a modulation region. | 07-26-2012 |
20120189249 | Single-Stage 1x5 Grating-Assisted Wavelength Division Multiplexer - A single-stage 1×5 grating-assisted wavelength division multiplexer is provided. A grating-assisted asymmetric Mach-Zehnder interferometer, a plurality of grating-assisted cross-state directional couplers and a plurality of novel side-band eliminators are combined to form the multiplexer. Only general gratings are required, not Bragg grating, for 5-channel wavelength division multiplexing in a single stage. A nearly ideal square-like band-pass filtering passband is obtained. The present disclosure can be used as a core device in IC-to-IC optical interconnects for multiplexing and demultiplexing of an optical transceiver. The present disclosure has a small size and good performance. | 07-26-2012 |
20120281949 | Mach-Zehnder Wavelength Division Multiplexer Having Flat Passband and Low Crosstalk - A Mach-Zehnder wavelength division multiplexer (WDM) is provided. The WDM has a short length with flat passband and low crosstalk. Since passband is flattened, crosstalk is reduced and length of the WDM is shortened, the WDN can be used for optical communication and optical interconnection in a single chip. | 11-08-2012 |
20120328234 | Low-loss Optical Coupling Apparatus - A low-loss optical coupling apparatus includes a silicon-on-insulator wafer, a silicon dioxide layer, a taper waveguide, a channel waveguide and a thick-film silicon dioxide layer. The silicon-on-insulator wafer is formed with a silicon substrate. The silicon dioxide layer is provided on the silicon substrate. The taper waveguide comprises a slab region formed on the silicon dioxide layer and a waveguide region formed on the slab region. An end of a chip is connected to an end of the waveguide region. The channel waveguide is formed on the slab region and connected to another end of the waveguide region. The thick-film silicon dioxide layer extends on the taper waveguide and covers the entire waveguide region. | 12-27-2012 |
20130277713 | As/Sb Compound Semiconductors Grown on Si or Ge Substrate - An As(arsenic)/Sb(antimony) compound semiconductor is grown on a Si(silicon) or Ge (germanium) substrate. With the present invention, island-like growth on the Si or Ge substrate owing to lattice constant mismatch is prevented. Bad electrical isolation owing to diffusion of Ge is also prohibited. The present invention could obtain a high quality metamorphic buffer which is suitable for integrating a Si or Ge substrate with an electronic or optoelectronic device of a III/V group semiconductor. | 10-24-2013 |
20140264450 | SEMICONDUCTOR DEVICE AND MANUFCTURING METHOD THEREOF - A semiconductor device including a substrate, a heterojunction body, a passivation layer, a source contact, a drain contact, and a gate contact. The heterojunction body disposed on or above the substrate includes a first semiconductor layer, a mask layer, a regrowth layer, and a second semiconductor layer. The first semiconductor layer is disposed on or above the substrate. The mask layer is disposed on or above a portion of the first semiconductor layer. The regrowth layer disposed on the first semiconductor layer and adjacent to the mask layer includes a main portion and at least one inclined portion. The second semiconductor layer is disposed on the mask layer and the regrowth layer. The passivation layer is disposed on the second semiconductor layer. The gate contact is disposed on the passivation layer, between the source contact and the drain contact, and at least above the inclined portion of the regrowth layer. | 09-18-2014 |