| Patent application number | Description | Published |
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| 20080206943 | METHOD OF FORMING STRAINED CMOS TRANSISTOR - A method of fabricating CMOS transistor is disclosed. Initially, a semiconductor substrate having at least a first active area and a second active area is provided. A high-strained thin film is formed on the semiconductor substrate, the first active area, and the second active area. Thereafter, a mask is formed to cover a part of the high-strained thin film, which is disposed on the first active area. An implantation is performed to implant dopants into the part of the high-strained thin film on the second active area and to modify the stress status thereof. After that, the mask is removed and a rapid thermal annealing process is performed. Then, the high-strained thin film is removed and the method of the present invention is accomplished. | 08-28-2008 |
| 20080242020 | METHOD OF MANUFACTURING A MOS TRANSISTOR DEVICE - A method of manufacturing a metal-oxide-semiconductor (MOS) transistor device is disclosed. A semiconductor substrate and a gate structure positioned on the semiconductor substrate are prepared first. A source region and a drain region are included in the semiconductor substrate on two opposite sides of the gate structure. Subsequently, a stressed cap layer is formed on the semiconductor substrate, and covers the gate structure, the source region and the drain region. Next, an inert gas treatment is performed to change a stress value of the stressed cap layer. Because the stress value of the stressed cap layer can be adjusted easily by means of the present invention, one stressed cap layer can be applied to both the N-type MOS transistor and the P-type MOS transistor. | 10-02-2008 |
| 20080293194 | Method of making a P-type metal-oxide semiconductor transistor and method of making a complementary metal-oxide semiconductor transistor - A method is disclosed to make a strained-silicon PMOS or CMOS transistor, in which, a compressive stress film is formed by reacting a silane having at least one substituent selected from the group consisting of hydrocarbyl, hydrocarboxy, carbonyl, formyl, carboxylic group, ester group, and halo group and ammonia, or a conventional compressive stress film is implanted with fluorine atoms, oxygen atoms, or carbon atoms, so as to improve the properties of negative bias temperature instability (NBTI). | 11-27-2008 |
| 20090275211 | FABRICATION METHOD OF POROUS LOW-K DIELECTRIC FILM - A method for fabricating a porous low-k dielectric film includes providing a substrate, performing a first CVD process by providing a back-bone precursor to form an interface dielectric layer, performing a second CVD process by providing a porogen precursor to form a back-bone layer, and removing the porogen material in the back-bone layer so that the back-bone layer becomes an ultra low-k dielectric layer. The interface dielectric layer and the ultra low-k dielectric layer compose a porous low-k dielectric film. | 11-05-2009 |
| 20090280614 | Method of making a P-type metal-oxide semiconductor transistor and method of making a complementary metal-oxide semiconductor transistor - A method is disclosed to make a strained-silicon PMOS or CMOS transistor, in which, a compressive stress film is formed by reacting a silane having at least one substituent selected from the group consisting of hydrocarbyl, hydrocarboxy, carbonyl, formyl, carboxylic group, ester group, and halo group and ammonia, or a conventional compressive stress film is implanted with fluorine atoms, oxygen atoms, or carbon atoms, so as to improve the properties of negative bias temperature instability (NBTI). | 11-12-2009 |
| 20100001317 | CMOS TRANSISTOR AND THE METHOD FOR MANUFACTURING THE SAME - A CMOS transistor and a method for manufacturing the same are disclosed. A semiconductor substrate having at least a PMOS transistor and an NMOS transistor is provided. The source/drain of the PMOS transistor comprises SiGe epitaxial layer. A carbon implantation process is performed to form a carbon-doped layer in the top portion of the source/drain of the PMOS transistor. A silicide layer is formed on the source/drain. A CESL is formed on the PMOS transistor and the NMOS transistor. The formation of the carbon-doped layer is capable of preventing Ge out-diffusion. | 01-07-2010 |
| Patent application number | Description | Published |
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| 20080237658 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device is provided. A MOS transistor is formed on a substrate, and then a contact etching stop layer (CESL) is formed over the substrate. A first UV-curing process is performed to increase the stress of the CESL. A dielectric layer is formed on the CESL, and then a second UV-curing process is performed to increase the stress of the dielectric layer. A CMP process is conducted, and then a cap layer is formed on the dielectric layer. | 10-02-2008 |
| 20080237662 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device is provided. A MOS transistor is formed on a substrate, and then a contact etching stop layer (CESL) is formed over the substrate. A first UV-curing process is performed to increase the stress of the CESL. A dielectric layer is formed on the CESL, and then a second UV-curing process is performed to increase the stress of the dielectric layer. A CMP process is conducted, and then a cap layer is formed on the dielectric layer. | 10-02-2008 |
| 20090146311 | INTERCONNECT STRUCTURE - An interconnect structure is disposed on a substrate with a conductive part thereon and includes a first porous low-k layer on the substrate, a damascene structure in the first porous low-k layer, a second porous low-k layer over the first porous low-k layer and the damascene structure, and a first UV cutting layer at least between the first porous low-k layer and the second porous low-k layer. The damascene structure is electrically connected with the conductive part. The UV cutting layer is a UV reflection layer or a UV reflection-absorption layer. | 06-11-2009 |
