Patent application number | Description | Published |
20130055559 | STATIONARY SEMI-SOLID BATTERY MODULE AND METHOD OF MANUFACTURE - A method of manufacturing an electrochemical cell includes transferring an anode semi-solid suspension to an anode compartment defined at least in part by an anode current collector and an separator spaced apart from the anode collector. The method also includes transferring a cathode semi-solid suspension to a cathode compartment defined at least in part by a cathode current collector and the separator spaced apart from the cathode collector. The transferring of the anode semi-solid suspension to the anode compartment and the cathode semi-solid to the cathode compartment is such that a difference between a minimum distance and a maximum distance between the anode current collector and the separator is maintained within a predetermined tolerance. The method includes sealing the anode compartment and the cathode compartment. | 03-07-2013 |
20140030623 | SEMI-SOLID FILLED BATTERY AND METHOD OF MANUFACTURE - A static semi-solid filled energy storage system having a plurality of static cells, each cell comprising an ion permeable membrane separating positive and negative current collectors and positioned to define positive and negative electroactive zones. Electroactive material is delivered to the electroactive zones via a plurality of manifolds. The manifolds are injected with an electronically insulating barrier that is configured to seal each static cell from its neighboring static cell. Valves are used to allow gas created from the electrochemical reactions to be released from the system. Coolant may be introduced to dissipate heat from the system. | 01-30-2014 |
20150024279 | SEMI-SOLID ELECTRODES WITH GEL POLYMER ADDITIVE - Embodiments described herein relate generally to electrochemical cells having semi-solid electrodes that include a gel polymer additive such that the electrodes demonstrate longer cycle life while significantly retaining the electronic performance of the electrodes and the electrochemical cells formed therefrom. In some embodiments, a semi-solid electrode can include about 20% to about 75% by volume of an active material, about 0.5% to about 25% by volume of a conductive material, and about 20% to about 70% by volume of an electrolyte. The electrolyte further includes about 0.01% to about 1.5% by weight of a polymer additive. In some embodiments, the electrolyte can include about 0.1% to about 0.7% of the polymer additive. | 01-22-2015 |
20150295272 | DAMAGE TOLERANT BATTERIES - Embodiments described herein relate generally to electrochemical cells having semi-solid electrodes that have damage tolerance, and in particular, are tolerant to physical damage due to short circuit, crushing, or overheating. In some embodiments, an electrochemical cell includes a positive electrode, a negative electrode and an ion-permeable membrane separating the positive electrode and the negative electrode. At least one of the positive electrode and the negative electrode can include a semi-solid ion-storing redox composition which has a thickness of at least about 250 μm. The electrochemical cell can have a first operating voltage in a first planar configuration and a second operating voltage in a second non-planar configuration such that the first operating voltage and the second operating voltage are substantially similar. In some embodiments, the electrochemical cell has a bend axis such that the electrochemical cell is bent about the bend axis in the second non-planar configuration. | 10-15-2015 |
Patent application number | Description | Published |
20120296364 | BALLOON CATHETER - Balloon catheter and methods for making and using balloon catheters are disclosed. An example balloon catheter may include a proximal shaft. A midshaft may be attached to the proximal shaft. The midshaft may have an outer wall. A distal shaft may be attached to the midshaft. A balloon may be coupled to the distal shaft. An inflation lumen may be defined that extends from the proximal shaft, through the midshaft, and into the distal shaft. The inflation lumen may be in fluid communication with the balloon. A support member may be attached to the outer wall of the midshaft. | 11-22-2012 |
20120296366 | BALLOON CATHETER WITH IMPROVED PUSHABILITY - Balloon catheter and methods for making and using balloon catheters are disclosed. An example balloon catheter may include a proximal shaft. A midshaft may be attached to the proximal shaft. The midshaft may have an outer wall. A distal shaft may be attached to the midshaft. A balloon may be coupled to the distal shaft. An inflation lumen may be defined that extends from the proximal shaft, through the midshaft, and into the distal shaft. The inflation lumen may be in fluid communication with the balloon. A core wire may be disposed within the inflation lumen and may be attached to the midshaft. | 11-22-2012 |
20120296367 | BALLOON CATHETER WITH IMPROVED PUSHABILITY - Balloon catheter and methods for making and using balloon catheters are disclosed. An example balloon catheter may include a proximal shaft. A midshaft may be attached to the proximal shaft. A distal shaft may be attached to the midshaft. A balloon may be coupled to the distal shaft. An inflation lumen may be defined that extends from the proximal shaft, through the midshaft, and into the distal shaft. The inflation lumen may be in fluid communication with the balloon. A core wire may extend through a portion of the inflation lumen. The midshaft may define an interior ridge along a portion of the inflation lumen. The core wire may have a shoulder that abuts the interior ridge of the midshaft. | 11-22-2012 |
Patent application number | Description | Published |
20130175588 | COHERENT SPIN FIELD EFFECT TRANSISTOR - A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co | 07-11-2013 |
20130248824 | GRAHENE FIELD EFFECT TRANSISTOR - Graphene FETs exhibit low power consumption and high switching rates taking advantage of the excellent mobility in graphene deposited on a rocksalt oxide (111) by chemical vapor deposition, plasma vapor deposition or molecular beam epitaxy. A source, drain and electrical contacts are formed on the graphene layer. These devices exhibit band gap phenomena on the order of greater than about 0.5 eV, easily high enough to serve as high speed low power logic devices. Integration of this construction technology, based on the successful deposition of few layer graphene on the rocksalt oxide (111) with SI CMOS is straightforward. | 09-26-2013 |
20140151826 | GRAPHENE MAGNETIC TUNNEL JUNCTION SPIN FILTERS AND METHODS OF MAKING - A Tunnel Magnetic Junction of high magnetoresistance is prepared at temperatures and pressure consistent with Si CMOS fabrication and operation. A first metal layer of cobalt or nickel is grown on an interconnect or conductive array line of e.g., copper. The metal layer is formed by electron beam irradiation. Annealing at UHV at temperatures below 700K yields a carbon segregation that forms a few layer thick (average density 3.5 ML) graphene film on the metal layer. Formation of a second layer of metal on top of the graphene barrier layer yields a high performance MTJ. | 06-05-2014 |
20140203382 | BORON CARBIDE FILMS EXHIBITS EXTRAORDINARY MAGNETOCONDUCTANCE AND DEVICES BASED THEREON - Boron carbide polymers prepared from orthocarborane icosahedra cross-linked with a moiety A wherein A is selected from the group consisting of benzene, pyridine. 1, 4-diaminobenzene and mixtures thereof give positive magnetoresistance effects of 30%-80% at room temperature. The novel polymers may be doped with transitional metals to improve electronic and spin performance. These polymers may be deposited by any of a variety of techniques, and may be used in a wide variety of devices including magnetic tunnel junctions, spin-memristors and non-local spin valves. | 07-24-2014 |
20140212671 | Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation of Graphene Heterostructures - Growth of single- and few-layer macroscopically continuous graphene films on Co | 07-31-2014 |
20140217375 | NOVEL SEMICONDUCTING ALLOY POLYMERS FORMED FROM ORTHOCARBORANE AND 1,4-DIAMINOBENZENE - Novel semiconducting polymers have been formed via the electron-induced cross-linking of orthocarborane B10C2H2 and 1,4-diaminobenzene. The films were formed by co-condensation of the molecular precursors and 200 eV electron-induced cross-linking under ultra-high vacuum (UHV) conditions. Ultraviolet photoemission spectra show that the compound films display a shift of the valence band maximum from ˜4.3 eV below the Fermi level for pure boron carbide to −1.7 eV below the Fermi level when diaminobenzene is added. The surface photovoltage effect decreases with decreasing B/N atomic ratio. A neutron detector comprises the polymer as the p-type semiconductor to be paired with an n-type semiconductor. | 08-07-2014 |
20150144882 | CONTROLLED EPITAXIAL BORON NITRIDE GROWTH FOR GRAPHENE BASED TRANSISTORS - We have demonstrated controlled growth of epitaxial h-BN on a metal substrate using atomic layer deposition. This permits the fabrication of devices such as vertical graphene transistors, where the electron tunneling barrier, and resulting characteristics such as ON-OFF rate may be altered by varying the number of epitaxial layers of h-BN. Few layer graphene is grown on the h-BN opposite the metal substrate, with leads to provide a vertical graphene transistor that is intergratable with Si CMOS technology of today, and can be prepared in a scalable, low temperature process of high repeatability and reliability. | 05-28-2015 |
20150200283 | VOLTAGE SWITCHABLE NON-LOCAL SPIN-FET AND METHODS FOR MAKING SAME - A voltage switchable non-local spin-FET is disclosed which provides a layer of chromia over a ferromagnetic substrate, such as cobalt. A film of graphene overlays the chromia, with a protective layer of metal oxide like cobalt oxide or iron oxide there between to prevent catalytic degradation of the graphene, which may occur. The graphene is provided with a contact, or source and drain, depending on the application. The spin-FET, which exhibits magnetic remanence, may be provided with a top gate of, e.g., cobalt or other ferromagnet such as iron. As an alternative to the ferromagnetic substrate, the device may be formed on a silicon or gallium arsenide base, or directly on a metal interconnect of an integrated circuit. | 07-16-2015 |
20150214156 | MANUFACTURABLE SPIN AND SPIN-POLARON INTERCONNECTS - Manufacturable spin and spin-polaron interconnects are disclosed that do not exhibit the same increase in resistivity shown by Cu interconnects associated with decreasing linewidth. These interconnects rely on the transmission of spin as opposed to charge. Two types of graphene based interconnect approaches are explored, one involving the injection and diffusive transport of discrete spin-polarized carriers, and the other involving coherent spin polarization of graphene charge carriers due to exchange interactions with localized substrate spins. Such devices are manufacturable as well as scalable (methods for their fabrication exist, and the interconnects are based on direct growth, rather than physical transfer or metal catalyst formation). Performance at or above 300 K, as opposed to cryogenic temperatures, is the performance criteria. | 07-30-2015 |
20160093746 | COHERENT SPIN FIELD EFFECT TRANSISTOR - A voltage switchable coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A chrome oxide layer is formed on the cobalt by MBE at room at UHV at room temperature. There was thin cobalt oxide interface between the chrome oxide and the cobalt. Other magnetic materials may be employed. A few ML field of graphene is deposited on the chrome oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology. | 03-31-2016 |