Patent application number | Description | Published |
20090084317 | ATOMIC LAYER DEPOSITION CHAMBER AND COMPONENTS - An atomic layer deposition chamber comprises a gas distributor comprising a central cap having a conical passageway between a gas inlet and gas outlet. The gas distributor also has a ceiling plate comprising first and second conical apertures that are connected. The first conical aperture receives a process gas from the gas outlet of the central cap. The second conical aperture extends radially outwardly from the first conical aperture. The gas distributor also has a peripheral ledge that rests on a sidewall of the chamber. | 04-02-2009 |
20100305884 | METHODS FOR DETERMINING THE QUANTITY OF PRECURSOR IN AN AMPOULE - Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume. | 12-02-2010 |
20110278260 | INDUCTIVE PLASMA SOURCE WITH METALLIC SHOWER HEAD USING B-FIELD CONCENTRATOR - A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate. | 11-17-2011 |
20130014894 | METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMS - Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator. | 01-17-2013 |
20130017315 | METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMSAANM LAI; CANFENGAACI FremontAAST CAAACO USAAGP LAI; CANFENG Fremont CA USAANM ABERLE; DAVID EUGENEAACI MilpitasAAST CAAACO USAAGP ABERLE; DAVID EUGENE Milpitas CA USAANM CAMP; MICHAEL P.AACI San RamonAAST CAAACO USAAGP CAMP; MICHAEL P. San Ramon CA USAANM BARANDICA; HENRYAACI San JoseAAST CAAACO USAAGP BARANDICA; HENRY San Jose CA USAANM HILKENE; MARTIN A.AACI GilroyAAST CAAACO USAAGP HILKENE; MARTIN A. Gilroy CA USAANM SCOTNEY-CASTLE; MATTHEW D.AACI Morgan HillAAST CAAACO USAAGP SCOTNEY-CASTLE; MATTHEW D. Morgan Hill CA USAANM TOBIN; JEFFREYAACI Mountain ViewAAST CAAACO USAAGP TOBIN; JEFFREY Mountain View CA USAANM BURNS; DOUGLAS H.AACI SaratogaAAST CAAACO USAAGP BURNS; DOUGLAS H. Saratoga CA USAANM HAWRYLCHAK; LARAAACI GilroyAAST CAAACO USAAGP HAWRYLCHAK; LARA Gilroy CA US - Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator. | 01-17-2013 |
20130040444 | METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS - Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port. | 02-14-2013 |
20140099795 | METHODS AND APPARATUS FOR PROCESSING SUBSTRATES USING AN ION SHIELD - Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer. | 04-10-2014 |
20140105582 | MINIMAL CONTACT EDGE RING FOR RAPID THERMAL PROCESSING - Embodiments of edge rings for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, an edge ring for a semiconductor process chamber may include an annular body having a central opening, an inner edge, an outer edge, an upper surface, and a lower surface, an inner lip disposed proximate the inner edge and extending downward from the upper surface, and a plurality of protrusions extending upward from the inner lip and disposed along the inner edge of the annular body, wherein the plurality of protrusions are arranged to support a substrate above the inner lip and over the central opening, wherein the inner lip is configured to substantially prevent light radiation from travelling between a first volume disposed above the edge ring and a second volume disposed below the edge ring when a substrate is disposed on the plurality of protrusions. | 04-17-2014 |
20150040822 | METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO EPITAXIAL GROWTH - Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process. | 02-12-2015 |
20150050819 | SUPPORT CYLINDER FOR THERMAL PROCESSING CHAMBER - Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder comprises a ring body having an inner peripheral surface and an outer peripheral surface, wherein the ring body comprises an opaque quartz glass material and wherein the ring body is coated with an optical transparent layer. The optical transparent layer has a coefficient of thermal expansion that is substantially matched or similar to the opaque quartz glass material to reduce thermal expansion mismatch that may cause thermal stress under high thermal loads. In one example, the opaque quartz glass material is synthetic black quartz and the optical transparent layer comprises a clear fused quartz material. | 02-19-2015 |