Patent application number | Description | Published |
20100140814 | RF DEVICE AND METHOD WITH TRENCH UNDER BOND PAD FEATURE - Electronic elements ( | 06-10-2010 |
20110266687 | ELECTRONIC ELEMENTS AND DEVICES WITH TRENCH UNDER BOND PAD FEATURE - Electronic elements having an active device region and bonding pad (BP) region on a common substrate desirably include a dielectric region underlying the BP to reduce the parasitic impedance of the BP and its interconnection as the electronic elements are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region having electrically isolated inclusions of a thermal expansion coefficient (TEC) less than that of the dielectric material in which they are embedded and/or closer to the substrate TEC. For silicon substrates, poly or amorphous silicon is suitable for the inclusions and silicon oxide for the dielectric material. The inclusions preferably have a blade-like shape separated by and enclosed within the dielectric material. | 11-03-2011 |
20130033325 | RF POWER TRANSISTOR CIRCUIT - A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency. | 02-07-2013 |
20140070365 | SEMICONDUCTOR DEVICES WITH IMPEDANCE MATCHING-CIRCUITS, AND METHODS OF MANUFACTURE THEREOF - Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices. | 03-13-2014 |
20140167855 | RF POWER TRANSISTOR CIRCUITS - A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency. | 06-19-2014 |
20140167863 | RF POWER TRANSISTOR CIRCUITS - A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency. | 06-19-2014 |
20140312976 | AMPLFIERS AND RELATED INTEGRATED CIRCUITS - Apparatus are provided for amplifier systems and related integrated circuits are provided. An exemplary integrated circuit includes a main amplifier arrangement, first impedance matching circuitry coupled between the output of the main amplifier arrangement and a first output of the integrated circuit, a peaking amplifier arrangement, and second impedance matching circuitry coupled between the output of the peaking amplifier arrangement and a second output of the integrated circuit. In one exemplary embodiment, the first impedance matching circuitry and the second impedance matching circuitry have different circuit topologies and different physical topologies. | 10-23-2014 |
20150035604 | COUPLER WITH DISTRIBUTED FEEDING AND COMPENSATION - The embodiments described herein can provide improved signal feeding between hybrid couplers and associated transistors. As such, these embodiments can improve the performance of amplifiers and other such RF devices that utilize these components. In one embodiment a device includes a distribution network and a compensation resonator. The distribution network is configured to output a signal through a relatively wide output feedline. This relatively wide output feedline provides distributed signal feeding that can improve signal distribution and performance. The output feedline is coupled to the compensation resonator. In general, the compensation resonator is configured to resonate with the distribution network at the frequency band of the signal. Thus, the distribution network and compensation resonator together can provide improved signal distribution while maintaining performance at the frequencies of interest. | 02-05-2015 |