| Patent application number | Description | Published |
|---|
| 20090230088 | FORMING A PRINT HEAD WITH A THIN MEMBRANE - A microfabricated device and method for forming a microfabricated device are described. A thin membrane including silicon is formed on a silicon body by bonding a silicon-on-insulator substrate to a silicon substrate. The handle and insulator layers of the silicon-on-insulator substrate are removed, leaving a thin membrane of silicon bonded to a silicon body such that no intervening layer of insulator material remains between the membrane and the body. A piezoelectric layer is bonded to the membrane. | 09-17-2009 |
| 20100110144 | Applying a Layer to a Nozzle Outlet - A nozzle layer is described that has a semiconductor body having a first surface, a second surface opposing the first surface, and a nozzle formed through the body connecting the first and second surfaces, wherein the nozzle being configured to eject fluid through a nozzle outlet on the second surface, and a metal layer around the outlet on the second surface and at least partially inside the nozzle, the metal layer inside the nozzle being completely exposed. | 05-06-2010 |
| 20100141097 | THIN FILM PIEZOELECTRIC ACTUATORS - A MEMS device with a thin piezoelectric actuator is described. A substrate with a first surface has a crystalline orientation prompting layer on the first surface. A piezoelectric portion contacts the crystalline orientation prompting layer and has an orientation corresponding to the orientation of the crystalline orientation prompting layer. A dielectric material surrounds the piezoelectric portion. The dielectric material is formed of an inorganic material. | 06-10-2010 |
| 20100147680 | SHAPED ANODE AND ANODE-SHIELD CONNECTION FOR VACUUM PHYSICAL VAPOR DEPOSITION - A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, a shield, and an anode. The cathode is inside the vacuum chamber, and the cathode includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The anode includes an annular body and an annular flange projecting inwardly from the annular body, and the annular flange is positioned to define a volume below the target for the generation of plasma. | 06-17-2010 |
| 20100147681 | CHAMBER SHIELD FOR VACUUM PHYSICAL VAPOR DEPOSITION - A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, and anode, and a shield. The cathode is inside the vacuum chamber and includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber and includes an annular body and a plurality of concentric annular projections extending from the annular body. | 06-17-2010 |
| 20100206713 | PZT Depositing Using Vapor Deposition - Methods and apparatus for sputtering a target material, such as PZT, can include positioning a conductive grid between a target and a substrate. The target, the substrate, and a sputtering gas can be contained in a chamber, and power of a first RF source can be applied so as to maintain a plasma in the chamber. Power of a second RF source can be applied to the conductive grid. Target material can be sputtered from the target onto the substrate. Positioning of the conductive grid and application of power by the second RF source can affect properties of sputter deposition of the target material. For example, the second RF source and the conductive grid can be part of a capacitive circuit configured such that voltage change in the capacitive circuit affects properties of the sputtering gas and, in turn, properties of a sputter deposition process. | 08-19-2010 |
| 20100206714 | PHYSICAL VAPOR DEPOSITION WITH PHASE SHIFT - A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate. | 08-19-2010 |
| 20100206718 | PHYSICAL VAPOR DEPOSITION WITH IMPEDANCE MATCHING NETWORK - A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate. | 08-19-2010 |
| 20100213795 | Sputtered Piezoelectric Material - Piezoelectric actuators having a composition of Pb | 08-26-2010 |
| 20110092049 | METHOD AND APPARATUS FOR SUBSTRATE BONDING - Methods for bonding a first substrate to a second substrate are described. A surface of the first substrate is coated with an adhesive layer. The adhesive layer is cured to b-stage. The surface of the first substrate is positioned in contact with the second substrate. An edge of the first substrate is pressed to an edge of the second substrate to initiate Van der Waals bonding. The first and second substrates are allowed to come together by Van der Waals bonding. The bonded first and second substrates are subjected to a sufficient heat for a sufficient time period to cure completely the adhesive layer. | 04-21-2011 |
| 20110115341 | Insulated Film Use in a Mems Device - A method of forming an actuator and an actuable device formed by this method are disclosed. This method includes depositing a photoimageable material to form a first photoimageable layer on a piezoelectric layer; patterning the first photoimageable layer to form an aperture; and disposing a first conductive layer on the first photoimageable layer. The first conductive layer partially overlies the first photoimageable layer such that a first portion of the first conductive layer contacts the first photoimageable layer and a second portion of the first conductive layer electrically contacts the piezoelectric layer in the aperture. | 05-19-2011 |
| 20110117311 | ETCHING PIEZOELECTRIC MATERIAL - Piezoelectric material is shaped by plasma etching to form deep features with high aspect ratios, and desired geometries. | 05-19-2011 |
