| Patent application number | Description | Published |
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| 20100006417 | CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING STRIKE STEP IN A PLASMA PROCESSING CHAMBER AND METHODS THEREOF - A method for identifying a stabilized plasma within a processing chamber of a plasma processing system is provided. The method includes executing a strike step within the processing chamber to generate a plasma. The strike step includes applying a substantially high gas pressure within the processing chamber and maintaining a low radio frequency (RF) power within the processing chamber. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the strike step, the probe head being on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the stabilized plasma exists. | 01-14-2010 |
| 20100007337 | PLASMA-FACING PROBE ARRANGEMENT INCLUDING VACUUM GAP FOR USE IN A PLASMA PROCESSING CHAMBER - An arrangement for measuring process parameters within a processing chamber is provided. The arrangement includes a probe arrangement disposed in an opening of an upper electrode. Probe arrangement includes a probe head, which includes a head portion and a flange portion. The arrangement also includes an o-ring disposed between the upper electrode and the flange portion. The arrangement further includes a spacer made of an electrically insulative material positioned between the head portion and the opening of the upper electrode to prevent the probe arrangement from touching the upper electrode. The spacer includes a disk portion configured for supporting an underside of the flange portion. The spacer also includes a hollow cylindrical portion configured to encircle the head portion. The spacer forms a right-angled path between the o-ring and an opening to the processing chamber to prevent direct line-of-sight path between the o-ring and the opening to the processing chamber. | 01-14-2010 |
| 20100007362 | RF-BIASED CAPACITIVELY-COUPLED ELECTROSTATIC (RFB-CCE) PROBE ARRANGEMENT FOR CHARACTERIZING A FILM IN A PLASMA PROCESSING CHAMBER - A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves. If the difference is less than predefined threshold, employ initial resistance value and initial capacitance for characterizing the deposited film. | 01-14-2010 |
| Patent application number | Description | Published |
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| 20090322342 | METHODS FOR AUTOMATICALLY CHARACTERIZING A PLASMA - A method for automatically characterizing plasma during substrate processing is provided. The method includes collecting a set of process data, which includes at least data about current and voltage. The method also includes identifying a relevancy range for the set of process data, wherein the relevancy range includes a subset of the set of process data. The method further includes determining a set of seed values. The method yet also includes employing the relevancy range and the set of seed values to perform curve-fitting, wherein the curve-fitting enables the plasma to be automatically characterized. | 12-31-2009 |
| 20100007359 | PASSIVE CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING IN-SITU ARCING EVENTS IN A PLASMA PROCESSING CHAMBER - An arrangement for detecting in-situ arcing events within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, which is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The probe arrangement also includes a detection arrangement that is coupled to a second plate of the measuring capacitor, wherein the detection arrangement is configured for converting an induced current flowing through the measuring capacitor into a set of digital signals, which is processed to detect the in-situ arcing events. | 01-14-2010 |
| 20100008015 | CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING DECHUCKING IN A PLASMA PROCESSING CHAMBER AND METHODS THEREOF - A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected. | 01-14-2010 |
| 20110128017 | PLASMA UNCONFINEMENT SENSOR AND METHODS THEREOF - An arrangement within a plasma reactor for detecting a plasma unconfinement event is provided. The arrangement includes a sensor, which is a capacitive-based sensor implemented within the plasma reactor. The sensor is implemented outside of a plasma confinement region and is configured to produce a transient current when the sensor is exposed to plasma associated with the plasma unconfinement event. The sensor has at least one electrically insulative layer oriented toward the plasma associated with the plasma unconfined event. The arrangement also includes a detection circuit, which is electrically connected to the sensor for converting the transient current into a transient voltage signal and for processing the transient voltage signal to ascertain whether the plasma unconfinement event exists. | 06-02-2011 |
