Patent application number | Description | Published |
20080271640 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants - A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula Si | 11-06-2008 |
20090054674 | Mechanical Enhancement of Dense and Porous Organosilicate Materials by UV Exposure - Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film. | 02-26-2009 |
20110143032 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants - A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula Si | 06-16-2011 |
20120202903 | NPE-Free Emulsifiers for Water-Blown Polyurethane Spray Foam - Alkylethoxylate alcohols or mixtures of alkyl alcohol ethoxylate with an average HLB value between 10 and 15 as compatibilizers for water blown polyurethane foam formulations that are substantially free of nonylphenol ethoxylates are disclosed. The HLB is defined as the mass percent of average structure of the compatibilizer that is hydrophilic, divided by 5. The compatiblilizer is mixed into the B-side of the polyurethane formulation. The B-side of the spray foam formulations comprise polyol, water, amine catalyst, and the compatibilizer of the invention such that the water is present at about 2% to about 30% by weight of the B-side formulation, and the compatibilizer is present at about 1% to about 30% by weight of the B-side formulation. The B-side of the formulation may further comprise metal catalysts, flame retardants, silicone surfactants, cell openers, antioxidants, as well as other additives. | 08-09-2012 |
20120282415 | Methods For Using Porogens For Low K Porous Organosilica Glass Films - A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6. | 11-08-2012 |
20130095255 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants - A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C | 04-18-2013 |
20130157435 | Materials and Methods of Forming Controlled Void - The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof. | 06-20-2013 |
20140113984 | Delay Action Catalyst for Improving The Stability of Polyurethane Systems Having Halogen Containing Blowing Agents - Catalyst compositions useful in the production of insulating polyurethane or polyisocyanurate foam are disclosed. The catalyst compositions impart increased stability of a mixture of the catalyst, a halogen-containing blowing agent, and a polyol. These catalyst compositions include amine/acid salts with a pH of <7.0 which can be used in combined with tertiary amine catalysts and metal-based or ammonium-based trimerization catalyst and at least one metal-based gel catalyst and optionally one or more of an additional catalyst described in (1) or (2). These improved catalysts can be used with any halogenated blowing agent, and provide substantial stability benefits with the use of hydrofluoroolefins and hydrofluorochloroolefins. In an exemplary embodiment, a process includes providing a pre-mix comprising an organic carboxylic di-acid, tri-acid or poly-acid component and contacting a tetraalkylguanidine and/or a tertiary amine containing an isocyanate reactive group with the acid component in the pre-mix to form a mixture of tetraalkylguanidine salt or tertiary amine salt or their combination. | 04-24-2014 |
20140363950 | Materials and Methods of Forming Controlled Void - The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof. | 12-11-2014 |