Patent application number | Description | Published |
20090017602 | METHOD FOR MANUFACTURING A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE FOR MICROELECTRONICS AND OPTOELECTRONICS - The method includes the following steps:
| 01-15-2009 |
20090170295 | MANUFACTURING METHOD FOR A SEMI-CONDUCTOR ON INSULATOR SUBSTRATE COMPRISING A LOCALISED Ge ENRICHED STEP - The invention relates to a manufacturing method of a semi-conductor on insulator substrate from an SOI substrate comprising a surface layer of silicon on an electrically insulating layer, called buried insulating layer, wherein a layer of Si | 07-02-2009 |
20100035414 | METHOD FOR PREPARING A GERMANIUM LAYER FROM A SILICON-GERMANIUM-ON-ISOLATOR SUBSTRATE - A method for making a germanium-on-insulator layer from an SGOI substrate, including: a) depositing on the substrate a layer of a metallic element M capable of selectively forming a silicide, the layer being in contact with a silicon-germanium alloy layer; and b) a reaction between the alloy layer and the layer of a metallic element M, by which a stack of M silicide-germanium-insulator layers is obtained. Such a method may, for example, find application to production of electronic devices such as MOSFET transistors. | 02-11-2010 |
20100044836 | PROCESS FOR PRODUCING LOCALISED Ge0I STRUCTURES, OBTAINED BY GERMANIUM CONDENSATION - The invention relates to a process for making at least one GeOI structure by germanium condensation of a SiGe layer supported by a layer of silicon oxide. The layer of silicon oxide is doped with germanium, the concentration of germanium in the layer of silicon oxide being such that it lowers the flow temperature of the layer of silicon oxide below the oxidation temperature allowing germanium condensation of the SiGe layer. | 02-25-2010 |
20110059598 | METHOD FOR STABILIZING GERMANIUM NANOWIRES OBTAINED BY CONDENSATION - The substrate comprises a first silicon layer, a target layer made from silicon-germanium alloy-base material forming a three-dimensional pattern with first and second securing areas and at least one connecting area. The first silicon layer is tensile stressed and/or the target layer contains carbon atoms. The first silicon layer is eliminated in the connecting area. The target layer of the connecting area is thermally oxidized so as to form the nanowire. The lattice parameter of the first silicon layer is identical to the lattice parameter of the material constituting the suspended beam, after said first silicon layer has been eliminated. | 03-10-2011 |
20110070734 | MANUFACTURING A MICROELECTRONIC DEVICE COMPRISING SILICON AND GERMANIUM NANOWIRES INTEGRATED ON A SAME SUBSTRATE - The invention relates to a method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors. | 03-24-2011 |
20150155564 | CURRENT COLLECTOR WITH INTEGRATED LEAK-PROOFING MEANS, BIPOLAR BATTERY COMPRISING SUCH A COLLECTOR - The present patent application relates to a device for a lithium electrochemical generator, said device comprising a band ( | 06-04-2015 |