Patent application number | Description | Published |
20120161290 | Black GE Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays - Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (˜4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (˜75°) and for relatively short nanoneedle lengths (˜1 μm). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of ˜1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates. | 06-28-2012 |
20120192934 | Nanostructure, Photovoltaic Device, and Method of Fabrication Thereof - An embodiment of nanostructure includes a conductive substrate; an insulating layer on the conductive substrate, metal nanoparticles, and elongated single crystal nanostructures. The insulating layer includes an array of pore channels. The metal nanoparticles are located at bottoms of the pore channels. The elongated single crystal nanostructures contact the metal nanoparticles and extend out of the pore channels. An embodiment of a photovoltaic device includes the nanostructure and a photoabsorption layer. An embodiment of a method of fabricating a nanostructure includes forming an insulating layer on a conductive substrate. The insulating layer has pore channels arranged in an array. Metal nanoparticles are formed in the pore channels. The metal nanoparticles conductively couple to the conductive layer. Elongated single crystal nanostructures are formed in the pore channels. A portion of the insulating layer is etched away, which leaves the elongated single crystal nanostructures extending out of the insulating layer. | 08-02-2012 |
20120273342 | COMPACT ION ACCELERATOR SOURCE - An ion source includes a conductive substrate, the substrate including a plurality of conductive nanostructures with free-standing tips formed on the substrate. A conductive catalytic coating is formed on the nanostructures and substrate for dissociation of a molecular species into an atomic species, the molecular species being brought in contact with the catalytic coating. A target electrode placed apart from the substrate, the target electrode being biased relative to the substrate with a first bias voltage to ionize the atomic species in proximity to the free-standing tips and attract the ionized atomic species from the substrate in the direction of the target electrode. | 11-01-2012 |
20130044846 | COMPACT ION SOURCE NEUTRON GENERATOR - A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product. | 02-21-2013 |
20140124737 | CARBON NANOTUBE NETWORK THIN-FILM TRANSISTORS ON FLEXIBLE/STRETCHABLE SUBSTRATES - This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network. | 05-08-2014 |
20150056793 | DOPING OF A SUBSTRATE VIA A DOPANT CONTAINING POLYMER FILM - Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a dopant-containing polymer and a non-polar solvent on a substrate; and annealing the substrate at a temperature of 750 to 1300° C. for 1 second to 24 hours to diffuse the dopant into the substrate; wherein the dopant-containing polymer is a polymer having a covalently bound dopant atom; wherein the dopant-containing polymer is free of nitrogen and silicon; and wherein the method is free of a step of forming an oxide capping layer over the coating prior to the annealing step. | 02-26-2015 |
Patent application number | Description | Published |
20140060646 | HIGH OPTICAL QUALITY POLYCRYSTALLINE INDIUM PHOSPHIDE GROWN ON METAL SUBSTRATES BY MOCVD - A new solar cell is disclosed wherein the solar cell comprises a substrate, a VIB metal thin film deposited on the substrate, and a polycrystalline III-V semiconductor thin film deposited on the VIB metal thin film. | 03-06-2014 |
20140069499 | MORPHOLOGICAL AND SPATIAL CONTROL OF InP CRYSTAL GROWTH USING CLOSED-SPACED SUBLIMATION - A new solar cell comprising a substrate, a VIB metal thin film deposited on the substrate, and a polycrystalline III-V semiconductor thin film deposited on the VIB metal thin film. | 03-13-2014 |
20140290737 | THIN FILM VLS SEMICONDUCTOR GROWTH PROCESS - A composition comprising a substrate, a polycrystalline III-V semiconductor layer, and an oxide layer disposed above the polycrystalline III-V semiconductor layer is described. A growth method that enables fabrication of continuous thin films of polycrystalline indium phosphide (InP) directly on metal foils is described. The method describes the deposition of an indium (In) thin film (up to 20 microns thick) directly on molybedenum (Mo) foil, followed by the deposition of a thin oxide capping layer (up to 1 micron thick). This capping layer prevents dewetting of the In from the substrate during subsequent high temperature processing steps. The Mo/In/Capping Layer stack is then heated in the presence of phosphorous precursors, causing supersaturation of the liquid indium with phosphorous, followed by precipitation of InP. These polycrystalline III-V films have grain sizes 100-200 microns, minority carrier lifetimes >2 ns and hall mobilities of 500 cm̂2/V-s. | 10-02-2014 |
20140293683 | MAGNETO-RESISTIVE EFFECT ELEMENT | 10-02-2014 |