| Patent application number | Description | Published |
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| 20080202588 | METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER - A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing. | 08-28-2008 |
| 20080202609 | METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER - A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing. | 08-28-2008 |
| 20080202610 | METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER - A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing. | 08-28-2008 |
| 20090272717 | METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS - Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels. | 11-05-2009 |
| 20100251828 | METHOD AND APPARATUS FOR GAS FLOW MEASUREMENT - A method and apparatus for measuring gas flow are provided. In one embodiment, a calibration circuit for gas control may be utilized to verify and/or calibrate gas flows utilized for backside cooling, process gas delivery, purge gas delivery, cleaning agent delivery, carrier gases delivery and remediation gas delivery, among others. | 10-07-2010 |
| 20110265831 | METHODS AND APPARATUS FOR PROVIDING A GAS MIXTURE TO A PAIR OF PROCESS CHAMBERS - A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line. | 11-03-2011 |
| 20110265883 | METHODS AND APPARATUS FOR REDUCING FLOW SPLITTING ERRORS USING ORIFICE RATIO CONDUCTANCE CONTROL - Methods and apparatus for gas delivery to a process chamber are provided herein. In some embodiments, an apparatus for processing substrates may include a mass flow controller to provide a desired total fluid flow; a first flow control manifold comprising a first inlet, a first outlet, and a first plurality of orifices selectably coupled therebetween, wherein the first inlet is coupled to the mass flow controller; and a second flow control manifold comprising a second inlet, a second outlet, and a second plurality of orifices selectably coupled therebetween, wherein the second inlet is coupled to the mass flow controller; wherein a desired flow ratio between the first outlet and the second outlet is selectably obtainable when causing the fluid to flow through one or more of the first plurality of orifices of the first manifold and one or more of the second plurality of orifices of the second manifold. | 11-03-2011 |
| 20110265887 | APPARATUS FOR RADIAL DELIVERY OF GAS TO A CHAMBER AND METHODS OF USE THEREOF - Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange. | 11-03-2011 |
| 20110265899 | SYSTEM AND METHOD FOR CALIBRATING PRESSURE GAUGES IN A SUBSTRATE PROCESSING SYSTEM - Systems and methods for calibrating pressure gauges in one or more process chambers coupled to a transfer chamber having a transfer volume is disclosed herein. The method includes providing a first pressure in the transfer volume and in a first inner volume of a first process chamber coupled to the transfer chamber, wherein the transfer volume and the first inner volume are fluidly coupled, injecting a calibration gas into the transfer volume to raise a pressure in the transfer volume and in the first inner volume to a second pressure, measuring the second pressure using each of a reference pressure gauge coupled to the transfer chamber and a first pressure gauge coupled to the first process chamber while the transfer volume and the first inner volume are fluidly coupled, and calibrating the first pressure gauge based on a difference in the measured second pressure between the reference pressure gauge and the first pressure gauge. | 11-03-2011 |
| 20110265951 | TWIN CHAMBER PROCESSING SYSTEM - Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source. | 11-03-2011 |
| 20110269314 | PROCESS CHAMBERS HAVING SHARED RESOURCES AND METHODS OF USE THEREOF - Process chambers having shared resources and methods of use are provided. In some embodiments, substrate processing systems may include a first process chamber having a first substrate support disposed within the first process chamber, wherein the first substrate support has a first heater and a first cooling plate to control a temperature of the first substrate support; a second process chamber having a second substrate support disposed within the second process chamber, wherein the second substrate support has a second heater and a second cooling plate to control a temperature of the second substrate support; and a shared heat transfer fluid source having an outlet to provide a heat transfer fluid to the first cooling plate and the second cooling plate and an inlet to receive the heat transfer fluid from the first cooling plate and the second cooling plate. | 11-03-2011 |
