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Jansman
Andreas Bernardus Maria Jansman, Nuenen NL
| Patent application number | Description | Published |
|---|---|---|
| 20090153268 | THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS - A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer ( | 06-18-2009 |
| 20100244988 | DEVICE WITH AN ELECTROACOUSTIC BALUN - A device has an electroacoustic interface between interfaces for balanced electrical signals and unbalanced electrical signals (i.e. a balun) includes a film of piezoelectric material having a first and second pair of electrodes on a first surface a common electrode, with at least partial overlaps with all of the electrodes of the first and second pair, on a second surface. The interfaces between the electrodes in the first and second pair have geometrically identical shapes. Piezoelectrically polarized regions are provided in the film at the overlaps of the electrodes with the electrode arrangement. The direction of polarization components of the regions in the overlaps with the first electrode and the second electrode in the first pair are equal to each other. To provide for balun coupling, the directions of the polarization components in the overlaps with the first electrode and the second electrode in the second pair are mutually opposite. | 09-30-2010 |
Andreas Bernardus Maria Jansman, Brabant NL
| Patent application number | Description | Published |
|---|---|---|
| 20110187361 | MAGNETIC FIELD SENSOR - An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure. | 08-04-2011 |
Andreas B., M. Jansman, Oisterwijk NL
| Patent application number | Description | Published |
|---|---|---|
| 20100039000 | BULK ACOUSTIC WAVE RESONATOR DEVICE - A bulk acoustic wave, BAW, resonator device comprising first and second metal layers ( | 02-18-2010 |
Andreras B. M. Jansman, Nuenen NL
| Patent application number | Description | Published |
|---|---|---|
| 20110037539 | BULK ACOUSTIC WAVE RESONATOR - A resonator comprises a bottom electrode layer ( | 02-17-2011 |