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| 20080237135 | Pb- ion binding by polyacid- based nanoparticles - Methods are disclosed for preparing novel biodegradable nanoparticles based on complexation of poly-gamma-glutamic acid (γ-PGA) or its cross-linked derivatives with bivalent lead ions. The final products are stable in aqueous media at low pH, neutral and mild alkaline conditions. The size of the complexes depends on the pH, concentrations and the ratios of γ-PGA and lead ions | 10-02-2008 |
| 20090018266 | Preparation of hydrophilic nanoparticles by copolymerization of mono and divinyl monomers in micellar solution - The present invention relates to the preparation of hydrophilic nanoparticles and in particular hydrophilic nanoparticles that are biocompatible. Free radical monovinyl-divinyl monomer copolymerization/cross-linking reactions of water-soluble, monovinyl N-vinyl-2-pyrrolidone (NVP) with a bi-unsaturated divinyl, comonomer (poly{ethylene glycol}dimethacrylate) (PEGDMA), has been found to yield hydrophilic nanoparticles (NPs). These nanoparticles are built from three-dimensional nanopolymer networks. In the polymers' synthesis the composition of the monomers, and the total monomer concentration were varied. The characteristics of copolymers were determined by nuclear magnetic resonance spectroscopy (NMR), Fourier transform infrared (FTIR) and elemental analysis. Particle size and morphology of nanoparticles were confirmed by dynamic light scattering (DLS), transmission electron microscope (TEM) and scanning electron microscope (SEM) methods. In the present invention hydrophilic polymers can be used in micellar polymerization to create hydrophilic nanoparticles. | 01-15-2009 |
| 20090180966 | Cancer cell diagnosis by targeting delivery of nanodevices - Macromolecular contrast agents for magnetic resonance imaging are described. Biomolecules and their modified derivatives form stable complexes with paramagnetic ions thus increasing the molecular relaxivity of carriers. The synthesis of biomolecular based nanodevices for targeted delivery of MRI contrast agents are described. Nanoparticles (NP) have been constructed by self-assembling of chitosan (CHIT) as polycation and poly-gamma glutamic acids (PGA) as polyanion. NP's are capable of Gd-ion uptake forming a particle with suitable molecular relaxivity. Folic acid (FA) is linked to the NP's to produce NP-FA bioconjugates that can be used for targeted in vitro delivery to a human cancer cell line. | 07-16-2009 |
| 20100144919 | Reactive polymeric nanoparticles (RPNPS) for restoration materials in dentistry - A method is disclosed in which modified and generic dental resins are combined as mixtures with reactive polymeric nanoparticles (RPNPs). Nanoparticles as additives clearly demonstrate that the RPNPs significantly influence the mechanical and shrinkage properties of the matrix and composites. | 06-10-2010 |
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| 20090017596 | Methods Of Forming Oxides, Methods Of Forming Semiconductor Constructions, And Methods Of Forming Isolation Regions - Some embodiments include methods of forming isolation regions in which spin-on material (for example, polysilazane) is converted to a silicon dioxide-containing composition. The conversion may utilize one or more oxygen-containing species (such as ozone) and a temperature of less than or equal to 300° C. In some embodiments, the spin-on material is formed within an opening in a semiconductor material to form a trenched isolation region. Other dielectric materials may be formed within the opening in addition to the silicon dioxide-containing composition formed from the spin-on material. Such other dielectric materials may include silicon dioxide formed by chemical vapor deposition and/or silicon dioxide formed by high-density plasma chemical vapor deposition. | 01-15-2009 |
| 20090269569 | Low Temperature Process for Polysilazane Oxidation/Densification - Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane material to a silicon oxide layer. | 10-29-2009 |
| 20090305511 | Methods of Treating Semiconductor Substrates, Methods Of Forming Openings During Semiconductor Fabrication, And Methods Of Removing Particles From Over Semiconductor Substrates - Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath. | 12-10-2009 |
| 20100013061 | SEMICONDUCTOR STRUCTURES INCLUDING SQUARE CUTS IN SINGLE CRYSTAL SILICON - A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction. | 01-21-2010 |
| 20100109120 | SINGLE CRYSTAL SILICON STRUCTURES - A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created. | 05-06-2010 |
| 20100221916 | Methods of Etching Oxide, Reducing Roughness, and Forming Capacitor Constructions - The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10 | 09-02-2010 |
| 20100276780 | Memory Arrays - The invention includes semiconductor constructions having trenched isolation regions. The trenches of the trenched isolation regions can include narrow bottom portions and upper wide portions over the bottom portions. Electrically insulative material can fill the upper wide portions while leaving voids within the narrow bottom portions. The trenched isolation regions can be incorporated into a memory array, and/or can be incorporated into an electronic system. The invention also includes methods of forming semiconductor constructions. | 11-04-2010 |
| 20110121255 | Integrated Memory Arrays, And Methods Of Forming Memory Arrays - Some embodiments include methods of forming memory arrays. A stack of semiconductor material plates may be patterned to subdivide the plates into pieces. Electrically conductive tiers may be formed along sidewall edges of the pieces. The pieces may then be patterned into an array of wires, with the array having vertical columns and horizontal rows. Individual wires may have first ends joining to the electrically conductive tiers, may have second ends in opposing relation to the first ends, and may have intermediate regions between the first and second ends. Gate material may be formed along the intermediate regions. Memory cell structures may be formed at the second ends of the wires. A plurality of vertically-extending electrical interconnects may be connected to the wires through the memory cell structures, with individual vertically-extending electrical interconnects being along individual columns of the array. Some embodiments include memory arrays incorporated into integrated circuitry. | 05-26-2011 |
| 20110183492 | Methods of forming oxides, methods of forming semiconductor constructions, and methods of forming isolation regions - Some embodiments include methods of forming isolation regions in which spin-on material (for example, polysilazane) is converted to a silicon dioxide-containing composition. The conversion may utilize one or more oxygen-containing species (such as ozone) and a temperature of less than or equal to 300° C. In some embodiments, the spin-on material is formed within an opening in a semiconductor material to form a trenched isolation region. Other dielectric materials may be formed within the opening in addition to the silicon dioxide-containing composition formed from the spin-on material. Such other dielectric materials may include silicon dioxide formed by chemical vapor deposition and/or silicon dioxide formed by high-density plasma chemical vapor deposition. | 07-28-2011 |
| 20110260298 | SEMICONDUCTOR STRUCTURES INCLUDING SQUARE CUTS IN SINGLE CRYSTAL SILICON AND METHOD OF FORMING SAME - A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction. | 10-27-2011 |
| 20120168898 | METHODS OF FORMING SINGLE CRYSTAL SILICON STRUCTURES AND SEMICONDUCTOR DEVICE STRUCTURES INCLUDING SINGLE CRYSTAL SILICON STRUCTURES - A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created. | 07-05-2012 |
| 20120178221 | Methods Of Forming Memory Arrays - Some embodiments include methods of forming memory arrays. A stack of semiconductor material plates may be patterned to subdivide the plates into pieces. Electrically conductive tiers may be formed along sidewall edges of the pieces. The pieces may then be patterned into an array of wires, with the array having vertical columns and horizontal rows. Individual wires may have first ends joining to the electrically conductive tiers, may have second ends in opposing relation to the first ends, and may have intermediate regions between the first and second ends. Gate material may be formed along the intermediate regions. Memory cell structures may be formed at the second ends of the wires. A plurality of vertically-extending electrical interconnects may be connected to the wires through the memory cell structures, with individual vertically-extending electrical interconnects being along individual columns of the array. Some embodiments include memory arrays incorporated into integrated circuitry. | 07-12-2012 |
| 20120322263 | METHODS OF ETCHING SINGLE CRYSTAL SILICON - A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction. | 12-20-2012 |
| 20120329215 | Methods of Forming Memory Arrays - Some embodiments include methods of forming memory arrays. A stack of semiconductor material plates may be patterned to subdivide the plates into pieces. Electrically conductive tiers may be formed along sidewall edges of the pieces. The pieces may then be patterned into an array of wires, with the array having vertical columns and horizontal rows. Individual wires may have first ends joining to the electrically conductive tiers, may have second ends in opposing relation to the first ends, and may have intermediate regions between the first and second ends. Gate material may be formed along the intermediate regions. Memory cell structures may be formed at the second ends of the wires. A plurality of vertically-extending electrical interconnects may be connected to the wires through the memory cell structures, with individual vertically-extending electrical interconnects being along individual columns of the array. Some embodiments include memory arrays incorporated into integrated circuitry. | 12-27-2012 |
| 20130009310 | SEMICONDUCTOR DEVICE STRUCTURES AND COMPOSITIONS FOR FORMING SAME - A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material. Resulting semiconductor device structures are also disclosed, as are compositions used to form the semiconductor device structures. | 01-10-2013 |
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| 20090076663 | Method and Device for Assigning a Wheel of a Motor Vehicle - A method and device for assigning a vehicle wheel to axles having different wheel sizes. The method includes measuring the acceleration “a” sensed by an acceleration sensor of a wheel electronic system in a wheel. The measured acceleration value is transmitted to an evaluation unit, which compares the measured acceleration value “a” with a standard value stored in a memory for a standard wheel. The evaluation unit assigns the vehicle wheel to an axle as a function of the comparison result. The method and device are particularly suited to determining lift axles for trucks. | 03-19-2009 |
| 20090084174 | Method for Assigning a Tire Pressure Monitoring System After Driving Interruptions and Device and System for Measuring Air Pressure in a Vehicle Tire - A method for assigning a position of a tire, having a tire sensor, on a vehicle, includes transmitting, with the sensor, a signal including at least an identification number of the sensor following activation by a signal from an LF antenna connected to an evaluation unit. At a system start time, the evaluation unit first initiates an initialization including determination of the position of each tire having a sensor. The evaluation unit stores the identification number of each sensor together with the determined position of the tire having the sensor, before switching into a normal operating mode in which tire data, for example air pressure, is monitored by the sensors, with the position and preferably assignment of the sensor to a specific LF antenna, being stored in the sensor and kept available for retrieval. A device and a system for measuring air pressure in a vehicle tire are also provided. | 04-02-2009 |
| 20090085732 | Method, Tire Sensor Device, Central Control Unit and System for Anti-Theft Protection Through Tire Removal Recognition - A method for recognizing the removal of a tire provided with a tire sensor device, includes recognizing, with the tire sensor device, if a respective tire is mounted on the motor vehicle and storing an item of information relating to a mounting status in the tire sensor device. If a removal is determined, the tire sensor device sends an item of information characterizing the removal to a central control unit and the central control unit outputs a warning. A tire sensor device, a central control unit and a system for anti-theft protection through tire removal recognition, are also provided. | 04-02-2009 |
| 20090085734 | Device and Method for Distinguishing Positions of Tire Sensors of a Double Tire System - A device and a method for distinguishing positions of two tire sensors of a double tire include an LF antenna attached to a vehicle and connected to a central processing unit and one tire sensor each per tire. The tire sensors have a device for measuring field strength of a signal emitted by the LF antenna and the tire sensors report back information on the measured field strength through the LF antenna to the central processing unit. The central processing unit determines the position of the two tire sensors of the double tire from a distribution or course of a current flow during wheel rotation. | 04-02-2009 |
| 20090309780 | METHOD FOR DISTANCE MEASUREMENT AND DATA TRANSMISSION IN A CONTINUOUS WAVE RADAR SYSTEM - A method for distance measurement and data transmission in a continuous wave radar system is described. A continuous wave radar system has a transmit and receive module and at least one transponder device, a mobile control and monitoring device and an HMI system. Transponder devices are searched for with the aid of an unmodulated continuous wave signal as an interrogation signal, such that the transponder device can send a radio response signal to the transmit and receive module in response to the interrogation signal, as a result of which a data transmission takes place from the transponder device to the transmit and receive module. Upon completion of the data transmission a frequency-modulated continuous wave signal is generated in order to measure, on the basis thereof, a distance between the transponder device and the transmit and receive module. | 12-17-2009 |
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| 20080311079 | Inhibitors of serine proteases, particularly HCV NS3-NS4A protease - The present invention relates to compounds that inhibit serine protease activity, particularly the activity of hepatitis C virus NS3-NS4A protease. As such, they act by interfering with the life cycle of the hepatitis C virus and are also useful as antiviral agents. The invention further relates to compositions comprising these compounds either for ex vivo use or for administration to a patient suffering from HCV infection. The invention also relates to methods of treating an HCV infection in a patient by administering a composition comprising a compound of this invention. The invention further relates to processes for preparing these compounds. | 12-18-2008 |
| 20090291902 | INHIBITORS OF SERINE PROTEASES, PARTICULARLY HCV NS3-NS4A PROTEASE - The present invention relates to compounds of formula I: | 11-26-2009 |
| 20100173851 | INHIBITORS OF SERINE PROTEASES, PARTICULARLY HCV NS3-NS4A PROTEASE - The present invention relates to compounds that inhibit serine protease activity, particularly the activity of hepatitis C virus NS3-NS4A protease. As such, they act by interfering with the life cycle of the hepatitis C virus and are also useful as antiviral agents. The invention further relates to compositions comprising these compounds either for ex vivo use or for administration to a patient suffering from HCV infection. The invention also relates to methods of treating an HCV infection in a patient by administering a composition comprising a compound of this invention. The invention further relates to processes for preparing these compounds. | 07-08-2010 |
| 20100330109 | INHIBITORS OF SERINE PROTEASES, PARTICULARLY HCV NS3-NS4A PROTEASE - The present invention relates to compounds of formula I: | 12-30-2010 |
| 20110104115 | INHIBITORS OF SERINE PROTEASES, PARTICULARLY HCV NS3-NS4A PROTEASE - The present invention relates to compounds that inhibit serine protease activity, particularly the activity of hepatitis C virus NS3-NS4A protease. As such, they act by interfering with the life cycle of the hepatitis C virus and are also useful as antiviral agents. The invention further relates to compositions comprising these compounds either for ex vivo use or for administration to a patient suffering from HCV infection. The invention also relates to methods of treating an HCV infection in a patient by administering a composition comprising a compound of this invention. The invention further relates to processes for preparing these compounds. | 05-05-2011 |
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| 20090187032 | INDUSTRIAL PROCESS FOR THE SYNTHESIS OF 17alpha-ACETOXY-11beta-[4-(N,N-DIMETHYL-AMINO)-PHENYL]-19-NORPREGNA-4,9-D- IENE-3,20-DIONE AND NEW INTERMEDIATES OF THE PROCESS - The present invention relates to a new industrial process for the synthesis of solvate-free 17α-acetoxy-11β-[4-(N,N-dimethyl-amino)-phenyl]-19-norpregna-4,9-diene-3,20-dione [CDB-2914] of formula (I) which is a strong antiprogestogene and antiglucocorticoid agent. The invention also relates to compounds of formula (VII) and (VIII) used as intermediates in the process. | 07-23-2009 |
| 20100137622 | INDUSTRIAL METHOD FOR THE SYNTHESIS OF 17-ACETOXY-11beta-[4-(DIMETHYLAMINO)-PHENYL]-21-METHOXY-19-NORPREGNA-4,9-- DIEN-3,20-DIONE AND THE KEY INTERMEDIATES OF THE PROCESS - The present invention relates to a process for the synthesis of the known 17-acetoxy-11-β-[4-(dimethyl amino)-phenyl]-21-methoxy-19-norpregna-4,9-dien-3,20-dione (further on CDB-4124) of formula (I) from 3,3-[1,2-ethandiyl-bis(oxy)]-oestr-5(10),9(11)-dien-17-one of formula (II). Compound CDB-4124 belongs to the group of anti-hormones. The process has the following steps: i) formation of an epoxide; ii) addition of hydrogen cyanide; iii) silylation of a hydroxyl group; iv) reaction with 4-(dimethylamino)-phenyl magnesium bromide Grignard reagent in the presence of CuCl (Teutsch reaction); v) silylation of a hydroxyl group with trimethyl chlorosilane; vi) reaction with diisobutyl aluminum hydride and after addition of acid to the reaction mixture; vii) methoxy-methylation with methoxy-methyl Grignard reagent formed in situ, while hydrolyzing the trimethylsilyl protective groups; viii) oxidation of a hydroxyl group with dicyclohexyl carbodiimide in the presence of dimethyl sulfoxide and a strong organic acid (Swern oxidation), and in given case after purification by chromatography; ix) acetylation of a hydroxyl group with acetic anhydride in the presence of perchloric acid, and in given case, purification by chromatography. The invention also relates to new intermediates of the process. | 06-03-2010 |
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| 20100061231 | MULTI-DOMAIN NETWORK AND METHOD FOR MULTI-DOMAIN NETWORK - Each domain of a multi-domain network collects intra-domain routing information relating to that domain and makes a reduced view of that information available to other domains of the network, and in which each domain of the network uses its own intra-domain routing information together with the reduced-view routing information from the other domains to form a logical view of the network so as to enable that domain to make an end-to-end route selection decision. | 03-11-2010 |
| 20100110918 | Method and apparatus for performance monitoring in a communications network - A method and device for determining a packet drop indicator, for use in a communication system is described. The method comprises the following steps: A. determining the number of packets sent at a sending side within a first time period; B. determining the number of packets received at a receiving side within a second time period; and C. calculating a packet drop indicator on the basis of said number of sent packets and said number of received packets. | 05-06-2010 |
| 20100195492 | Controlling Traffic in a Packet Switched Communications Network - The present invention relates to a packet switched communications network especially to an Ethernet network in which User Network Interfaces (UNI) are standardized between client network ( | 08-05-2010 |
| 20100208614 | METHOD AND ARRANGEMENT FOR SCHEDULING DATA PACKETS IN A COMMUNICATION NETWORK SYSTEM - The present invention relates to a method and an arrangement for scheduling data packets each belonging to a particular traffic class associated with a certain quality of service (QoS) level and transmitted between a first communication network node and a second communication network node. Initially a token rate for assigning tokens to each traffic class is set and an incoming traffic rate of each traffic class is measured by counting a number of incoming data packets during a pre-determined period of time. Then, based on said measured incoming traffic rate said token rate is adjusted in order to obtain a fair scheduling of data packets belonging to different traffic classes. | 08-19-2010 |
| 20100309894 | Method and Apparatuses for Allowing a Nomadic Terminal to Access a Home Network on Layer 2 Level - A method of allowing a nomadic terminal to access a home network on the Layer 2 level. The method comprises connecting said terminal to a remote access network via an access point, the remote access network being connected to an operator's backbone network via a remote access router. Signalling is exchanged between the access point and an authentication server within the backbone network in order to authenticate the terminal to the authentication server and, following successful authentication, a Layer 2 tunnel extending across the backbone network is established for the purpose of connecting said nomadic terminal to the home network. | 12-09-2010 |
| 20110019654 | Method and Apparatus for Use in a Communications Network - A method is provided of enabling access for a terminal ( | 01-27-2011 |
| 20110026502 | Method and System for Simultaneous Local and EPC Connectivity - A system for providing simultaneous local and global connectivity for a 3 | 02-03-2011 |
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| 20080287404 | High Purity 17Alpha-Cyanomethyl-17Beta-Hydroxy-Estra-4,9-Diene-3- One and Process For the Syntheses Thereof - The invention relates to a new process for the synthesis of high purity 17α-cyanomethyl-17β-hydroxy-estra-4,9-diene-3-one (further on dienogest) of formula (I) from 3-methoxy-17-hydroxy-estra-2,5(10)-diene of formula (V). The invention relates also to the high purity 17α-cyanomethyl-17β-hydroxy-estra-4,9-diene-3-one and pharmaceutical compositions containing that as active ingredient. The pharmaceutical compositions according to this invention contain high purity dienogest of formula (I) in which the total amount of impurities is less than 0.1%, while the amount of 4-bromo-dienogest is under the detection limit (0.02%) as active ingredient or at least one of the active ingredients and auxiliary materials, which are commonly used in practice, such as carriers, excipients or diluents. According to our invention the dienogest of formula (I) is synthesized the following way: i) 3-methoxy-17-hydroxy-estra-2,5(10)-diene of formula (V) is reacted with aluminum isopropylate in the presence of cyclohexanone in an inert organic solvent under heating; ii) the so obtained 3-methoxy-estra-2,5(10)-diene-17-one of formula (IV) is reacted with cyanomethyl lithium at a temperature between 0 and −30° C.; iii) the obtained 3-methoxy-17α-cyanomethyl-17β-hydroxy-estra-2,5(10)-diene of formula (III) is reacted with a strong organic acid in tetrahydrofuran solution; iv) the obtained 17α-cyanomethyl-17β-hydroxy-estr-5(10)-ene-3-one of formula (II) is reacted with 1-1.5 equivalent of pyridinium tribromide in pyridine solution at a temperature between 0 and 60° C., then the obtained crude dienogest of formula (I) is purified by recrystallization and preparative HPLC. | 11-20-2008 |
| 20090312299 | Isolated Isomers of Norelgestromin and Methods of Making and Using the Same - The invention is directed to a process of preparing substantially pure d-(17α)-13-ethyl-17-hydroxy-18,19-dinorpregn-4-ene-20-yn-3-one-3E- and -3Z-oxime isomers, as well as a process for the synthesis of the mixture of isomers and the pure isomers. The invention also relates to substantially pure d-(17α)-13-ethyl-17-hydroxy-18,19-dinorpregn-4-ene20-yn-3-one-3E-oxime and substantially pure d-(17α)-13-ethyl-17-hydroxy-18,19-dinorpregn-4-ene-20-yn-3-one-3Z-oxime isomer. Further aspects of the invention include a composition comprising substantially pure d-(17α)-13-ethyl-17-hydroxy-18,19-dinorpregn-4-ene20-yn-3-one-3E-oxime or substantially pure d-(17α)-13-ethyl-17-hydroxy-18,19-dinorpregn-4-ene-20-yn-3-one-3Z-oxime isomer, and methods of treatment using said compositions. | 12-17-2009 |
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| 20090018149 | 4,5,6,7-tetrahydrobenzo[b]thiophene derivatives and methods for medical intervention against mycobacterial infections - Described are 4,5,6,7-tetrahydrobenzo[b]thiophene derivatives and pharmaceutically acceptable salts thereof, the use of these derivatives for the prophylaxis and/or treatment of mycobacteria-induced infections and opportunistic infections, as well as compositions containing at least one 4,5,6,7-tetrahydrobenzo[b]thiophene derivative and/or pharmaceutically acceptable salts thereof. Furthermore, the present application refers to the use of mycobacterial protein serine/threonine kinases for developing methods for detection and determination of these kinases for recognising and monitoring diseases and for controlling therapy of diseases. | 01-15-2009 |
| 20090298842 | Novel therapeutic targets for the treatment of mycobacterial infections and compounds useful therefor - Described herein is the discovery that certain mycobacterial serine/threonine protein kinases, particularly protein kinase G (PknG), are effective therapeutic targets for the treatment of mycobacterial infections. Furthermore, the present application refers to the use of mycobacterial serine/threonine protein kinases for developing methods for detection and determination of these kinases for recognizing and monitoring diseases and for controlling therapy of diseases. Additionally disclosed are novel 4,5,6,7-tetrahydrobenzo[b]thiophene compounds, benzo(g)quinoxaline compounds, and pharmaceutically acceptable salts thereof, and methods of using such compounds and salts thereof for the prophylaxis and/or treatment of virally and/or bacterially induced infections, particularly mycobacteria-induced infections, including opportunistic infections, as well as pharmaceutical compositions containing at least one 4,5,6,7-tetrahydrobenzo[b]thiophene compound and/or benzo(g)quinoxaline compound and/or pharmaceutically acceptable salts thereof in a pharmaceutically acceptable carrier. | 12-03-2009 |
