| Patent application number | Description | Published |
|---|
| 20100181633 | Magnetic Memory Device - A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density. | 07-22-2010 |
| 20100183902 | Magnetic memory devices and methods of manufacturing such magnetic memory devices - A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer. | 07-22-2010 |
| 20100240189 | Methods of Fabricating Semiconductor Devices - Methods of fabricating semiconductor devices are provided including forming a dielectric interlayer on a substrate, the dielectric interlayer defining an opening therein. A metal pattern is formed in the opening. An oxidization process is performed on the metal pattern to form a conductive metal oxide pattern, and the conductive metal oxide pattern is planarized. Related semiconductor devices are also provided. | 09-23-2010 |
| 20100277976 | MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS HAVING DIFFERENT PRODUCTS OF SATURATED MAGNETIZATION AND THICKNESS AND RELATED METHODS - A magnetic memory device may include a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers. The free layer may include a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. More particularly, the nonmagnetic layer may be between the first and second magnetic layers, and the first magnetic layer may be between the tunnel barrier and the second magnetic layer. A product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer may be less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer. Related methods are also discussed. | 11-04-2010 |
| 20110062537 | Magnetic Memory Devices - A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer. | 03-17-2011 |
| 20110260272 | Magnetic Memory Device - A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer. | 10-27-2011 |
| 20110303996 | MAGNETIC MEMORY DEVICES - A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer. | 12-15-2011 |
