| Patent application number | Description | Published |
|---|
| 20100296338 | NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other. | 11-25-2010 |
| 20100301305 | PHASE CHANGE MEMORY DEVICE WITH ALTERNATING ADJACENT CONDUCTION CONTACTS AND FABRICATION METHOD THEREOF - A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction contacts. The first wiring lines are arranged substantially in parallel to each other so that the first wiring lines are grouped into odd and even numbered first wiring lines. The memory cells are coupled to the first and second wiring lines. The conduction contacts coupled to the first wiring lines so that only one conduction contact is coupled to a center of a corresponding odd numbered first wiring line. Also only two corresponding conduction contacts are coupled to opposing edges of a corresponding even numbered first wiring line. Accordingly, the conduction contacts are arranged on the first wiring lines so that conduction contacts are not adjacent to each other with respect to immediately adjacent first wiring lines. | 12-02-2010 |
| 20100327249 | PHASE CHANGE MEMORY DEVICE HAVING AN IMPROVED WORD LINE RESISTANCE, AND METHODS OF MAKING SAME - A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurality of current paths, a switching element, and a phase change variable resistor. The word line is formed in a cell area of the semiconductor substrate. The interlayer insulation film formed on the word line. The strapping line is formed on the interlayer insulation film such that the strapping line overlaps on top of the word line. The current paths electrically connect together the word line with the strapping line. The switching element is electrically connected to the strapping line. The phase change variable resistor is electrically connected to the switching element. | 12-30-2010 |
| 20100327252 | PHASE CHANGE MEMORY APPARATUS AND FABRICATION METHOD THEREOF - A phase change memory apparatus is provided that includes a first electrode of a bar type having a trench formed on an active region of a semiconductor substrate, a second electrode formed in a bottom portion of the trench, and a bottom electrode contact formed on the second electrode. | 12-30-2010 |
| 20110143477 | METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE USING A CROSS PATTERNING TECHNIQUE - A method of manufacturing a phase change memory device is provided. A first insulating layer having a plurality of metal word lines spaced apart at a constant distance is formed on a semiconductor substrate. A plurality of line structures having a barrier metal layer, a polysilicon layer and a hard mask layer are formed to be overlaid on the plurality of metal word lines. A second insulating layer is formed between the line structures. Cross patterns are formed by etching the hard mask layers and the polysilicon layers of the line structures using mask patterns crossed with the metal word lines. A third insulating layer is buried within spaces between the cross patterns. Self-aligned phase change contact holes are formed and at the same time, diode patterns formed of remnant polysilicon layers are formed by selectively removing the hard mask layers constituting the cross patterns. | 06-16-2011 |
| 20110147689 | PHASE CHANGE MEMORY DEVICE CAPABLE OF REDUCING DISTURBANCE AND FABRICATION METHOD THEREOF - A phase change memory device capable of reducing disturbances between adjacent PRAM memory cells and a fabrication method are presented. The phase change memory device includes word lines, heating electrodes, an interlayer insulating layer, and a phase change lines. The word lines are formed on a semiconductor substrate and extend in parallel with a constant space. The heating electrodes are electrically connected to the plurality of word lines. The interlayer insulating layer insulates the heating electrodes. The phase change lines extend in a direction orthogonal to the word line and are electrically connected to the heating electrodes. Curves are formed on a surface of the interlayer insulating layer between the word lines such that the effective length of the phase change layer between adjacent heating electrodes is larger than the physical distance between the adjacent heating electrodes. | 06-23-2011 |
| Patent application number | Description | Published |
|---|
| 20090154923 | WAVELENGTH SELECTIVE SWITCH - Provided is a wavelength selective switch (WSS), and more particularly, a wavelength selective switch for electrically switching a wavelength without physical displacement. The wavelength selective switch includes an optical demultiplexer for dividing an input optical signal into signals having wavelengths corresponding to respective channels, selecting either the optical signal of each channel obtained by dividing the input optical signal or an optical signal input via an add port, and outputting the selected optical signal; and an optical multiplexer including an optical deflecting unit for individually deflecting the optical signals of the respective channels received from the optical demultiplexer according to supplied current or applied voltage, wherein the optical signal of each channel deflected by the optical deflecting unit is output to a specific output port. In the wavelength selective switch, current is supplied to the optical deflectors to switch the channels, resulting in higher reliability, smaller volume and higher switching speed than a conventional wavelength selective switch using mechanical displacement to switch channels. | 06-18-2009 |
| 20090154928 | WAVELENGTH DIVISION MULTIPLEXER/DEMULTIPLEXER HAVING FLAT WAVELENGTH RESPONSE - Provided is a wavelength division multiplexer/demultiplexer having a flat wavelength response. In the wavelength division multiplexer/demultiplexer, a modified taper-shaped optical waveguide is interposed between an input waveguide and a first slab waveguide, such that the distribution of an optical signal input to an Arrayed Waveguide Grating (AWG) has a sinc-function shape. Thus, a flat wavelength response can be obtained in an output waveguide. In addition, the modified taper-shaped optical waveguide interposed to obtain a flat wavelength response has a small size and a simple structure, and thus can be applied to a conventional wavelength division multiplexer/demultiplexer without a design change. | 06-18-2009 |
| 20100008670 | WAVELENGTH SELECTIVE SWITCH USING PLANAR LIGHTWAVE CIRCUIT TECHNOLOGY - Provided is a wavelength selective switch. The wavelength selective switch includes a first wavelength division multiplexer, an M number of optical switches, an (M+N−1) number of optical combiners, and a second wavelength division multiplexer. The first wavelength division multiplexer receives optical signals of an M number of wavelength channels to divide the received optical signals according to each channel, thereby outputting the divided optical signals. The M number of optical switches changes a path of on an optical signal outputted by an M number of wavelength channels from the first wavelength division multiplexer into one of an N number of output ports. The (M+N−1) number of optical combiners is respectively connected to the N number of output ports of the optical switches. The (M+N−1) number of optical combiners couple the N number of inputted optical signals to one output port. The second wavelength division multiplexer has an (M+N−1) number of input ports and an N number of output ports. The (M+N−1) number of output signals of the optical combiners is connected to the input ports, respectively, and the inputted signals are multiplexed to output the multiplexed signals from any of the N number of output ports. | 01-14-2010 |
| 20100142884 | OPTICAL COMMUNICATION DEVICE INCLUDING DIGITAL OPTICAL SWITCH - Provided is an optical communication device including an optical switch. The optical communication device a main core including an optical input part and a transmission output part and a reflection output part disposed on a side of the main core. An optical signal is outputted through the reflection output part or the transmission output part according to an operation of a heater. | 06-10-2010 |
| 20110085760 | OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME - Provided is an optical device. The optical device includes a substrate having a waveguide region and a mounting region, a planar lightwave circuit (PLC) waveguide including a lower-clad layer and an upper-clad layer on the waveguide region of the substrate and a platform core between the lower-clad layer and the upper-clad layer, a terrace defined by etching the lower-clad layer on the mounting region of the substrate, the terrace including an interlocking part, an optical active chip mounted on the mounting region of the substrate, the optical active chip including a chip core therein, and a chip alignment mark disposed on a mounting surface of the optical active chip. The optical active chip is aligned by interlocking between the interlocking part of the terrace and the chip alignment mark of the optical active chip and mounted on the mounting region. | 04-14-2011 |
| 20110116740 | OPTICAL COMMUNICATION DEVICE HAVING DIGITAL OPTICAL SWITCHES - Provided is an optical communication device including optical switches. The optical communication device a first multi-mode core disposed on a substrate, the first multi-mode core extending in a first direction and second multi-mode cores disposed on a substrate, the second multi-mode cores parallelly extending in a second direction non-parallel to the first direction to intersect the first multi-mode core. The heaters respectively intersect intersectional regions between the first and second multi-mode cores. | 05-19-2011 |
| 20110141393 | OPTICAL DEVICES - Provided is an optical device. The optical device includes an optical waveguide comprising a core surrounded by a cladding, a light source providing light to the optical waveguide, and an optics system disposed between the optical waveguide and the light source, the optics system focusing the light emitted from the light source into the core of the optical waveguide and a portion of the cladding adjacent to the core. | 06-16-2011 |
| 20110150388 | OPTICAL SWITCH USING MACH-ZEHNDER INTERFEROMETER AND OPTICAL SWITCH MATRIX HAVING THE SAME - Provided are an optical switch using a Mach-Zehnder interferometer and an optical switch matrix including the same. The optical switch includes a first coupler, an optical delay line, and a second coupler. The first coupler branches an optical signal transmitted to a first or second input waveguide into two optical signals. The optical delay line includes first and second arm waveguides of the same length transmitting the branched optical signal and a heater heating the first arm waveguide. The first and second arm waveguides have one of a full wavelength optical path difference and a half wavelength optical path difference according to whether the heater is turned on. The second coupler branches optical signals outputted from the optical delay line into two optical signals, respectively, and transmits the branched optical signals to the first or second output waveguide. | 06-23-2011 |
