Patent application number | Description | Published |
20100296338 | NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other. | 11-25-2010 |
20100301305 | PHASE CHANGE MEMORY DEVICE WITH ALTERNATING ADJACENT CONDUCTION CONTACTS AND FABRICATION METHOD THEREOF - A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction contacts. The first wiring lines are arranged substantially in parallel to each other so that the first wiring lines are grouped into odd and even numbered first wiring lines. The memory cells are coupled to the first and second wiring lines. The conduction contacts coupled to the first wiring lines so that only one conduction contact is coupled to a center of a corresponding odd numbered first wiring line. Also only two corresponding conduction contacts are coupled to opposing edges of a corresponding even numbered first wiring line. Accordingly, the conduction contacts are arranged on the first wiring lines so that conduction contacts are not adjacent to each other with respect to immediately adjacent first wiring lines. | 12-02-2010 |
20100327249 | PHASE CHANGE MEMORY DEVICE HAVING AN IMPROVED WORD LINE RESISTANCE, AND METHODS OF MAKING SAME - A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurality of current paths, a switching element, and a phase change variable resistor. The word line is formed in a cell area of the semiconductor substrate. The interlayer insulation film formed on the word line. The strapping line is formed on the interlayer insulation film such that the strapping line overlaps on top of the word line. The current paths electrically connect together the word line with the strapping line. The switching element is electrically connected to the strapping line. The phase change variable resistor is electrically connected to the switching element. | 12-30-2010 |
20100327252 | PHASE CHANGE MEMORY APPARATUS AND FABRICATION METHOD THEREOF - A phase change memory apparatus is provided that includes a first electrode of a bar type having a trench formed on an active region of a semiconductor substrate, a second electrode formed in a bottom portion of the trench, and a bottom electrode contact formed on the second electrode. | 12-30-2010 |
20110143477 | METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE USING A CROSS PATTERNING TECHNIQUE - A method of manufacturing a phase change memory device is provided. A first insulating layer having a plurality of metal word lines spaced apart at a constant distance is formed on a semiconductor substrate. A plurality of line structures having a barrier metal layer, a polysilicon layer and a hard mask layer are formed to be overlaid on the plurality of metal word lines. A second insulating layer is formed between the line structures. Cross patterns are formed by etching the hard mask layers and the polysilicon layers of the line structures using mask patterns crossed with the metal word lines. A third insulating layer is buried within spaces between the cross patterns. Self-aligned phase change contact holes are formed and at the same time, diode patterns formed of remnant polysilicon layers are formed by selectively removing the hard mask layers constituting the cross patterns. | 06-16-2011 |
20110147689 | PHASE CHANGE MEMORY DEVICE CAPABLE OF REDUCING DISTURBANCE AND FABRICATION METHOD THEREOF - A phase change memory device capable of reducing disturbances between adjacent PRAM memory cells and a fabrication method are presented. The phase change memory device includes word lines, heating electrodes, an interlayer insulating layer, and a phase change lines. The word lines are formed on a semiconductor substrate and extend in parallel with a constant space. The heating electrodes are electrically connected to the plurality of word lines. The interlayer insulating layer insulates the heating electrodes. The phase change lines extend in a direction orthogonal to the word line and are electrically connected to the heating electrodes. Curves are formed on a surface of the interlayer insulating layer between the word lines such that the effective length of the phase change layer between adjacent heating electrodes is larger than the physical distance between the adjacent heating electrodes. | 06-23-2011 |
20120149163 | PHASE CHANGE MEMORY DEVICE WITH ALTERNATING ADJACENT CONDUCTION CONTACTS AND FABRICATION METHOD THEREOF - A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction contacts. The first wiring lines are arranged substantially in parallel to each other so that the first wiring lines are grouped into odd and even numbered first wiring lines. The memory cells are coupled to the first and second wiring lines. The conduction contacts coupled to the first wiring lines so that only one conduction contact is coupled to a center of a corresponding odd numbered first wiring line. Also only two corresponding conduction contacts are coupled to opposing edges of a corresponding even numbered first wiring line. Accordingly, the conduction contacts are arranged on the first wiring lines so that conduction contacts are not adjacent to each other with respect to immediately adjacent first wiring lines. | 06-14-2012 |
20120329222 | PHASE CHANGE MEMORY DEVICE HAVING AN IMPROVED WORD LINE RESISTANCE, AND METHODS OF MAKING SAME - A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurality of current paths, a switching element, and a phase change variable resistor. The word line is formed in a cell area of the semiconductor substrate. The interlayer insulation film formed on the word line. The strapping line is formed on the interlayer insulation film such that the strapping line overlaps on top of the word line. The current paths electrically connect together the word line with the strapping line. The switching element is electrically connected to the strapping line. The phase change variable resistor is electrically connected to the switching element. | 12-27-2012 |
20130037874 | NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other. | 02-14-2013 |
20130039123 | NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other. | 02-14-2013 |
20130043456 | NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other. | 02-21-2013 |
20130071985 | PHASE CHANGE MEMORY DEVICE CAPABLE OF REDUCING DISTURBANCE AND FABRICATION METHOD THEREOF - A phase change memory device capable of reducing disturbances between adjacent PRAM memory cells and a fabrication method are presented. The phase change memory device includes word lines, heating electrodes, an interlayer insulating layer, and a phase change lines. The word lines are formed on a semiconductor substrate and extend in parallel with a constant space. The heating electrodes are electrically connected to the plurality of word lines. The interlayer insulating layer insulates the heating electrodes. The phase change lines extend in a direction orthogonal to the word line and are electrically connected to the heating electrodes. Curves are formed on a surface of the interlayer insulating layer between the word lines such that the effective length of the phase change layer between adjacent heating electrodes is larger than the physical distance between the adjacent heating electrodes. | 03-21-2013 |
20130157434 | PHASE CHANGE MEMORY APPARATUS AND FABRICATION METHOD THEREOF - A phase change memory apparatus is provided that includes a first electrode of a bar type having a trench formed on an active region of a semiconductor substrate, a second electrode formed in a bottom portion of the trench, and a bottom electrode contact formed on the second electrode. | 06-20-2013 |
20140167149 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device includes a gate electrode formed on a sidewall of a structure extending from a semiconductor substrate. A junction region is form in the structure to a first depth from a top of the structure and formed to overlap the gate electrode. A protection layer is formed between an outer wall of the structure and the gate electrode to a second depth less than the first depth from the top of the structure. | 06-19-2014 |
20140248765 | SEMICONDUCTOR MEMORY DEVICE HAVING DUMMY CONDUCTIVE PATTERNS ON INTERCONNECTION AND FABRICATION METHOD THEREOF - A semiconductor memory device having a cell pattern formed on an interconnection and capable of reducing an interconnection resistance and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate in which a cell area, a core area, and a peripheral area are defined and a bottom structure is formed, a conductive line formed on an entire structure of the semiconductor substrate, a memory cell pattern formed on the conductive line in the cell area, and a dummy conductive pattern formed on any one of the conductive line in the core area and the peripheral area. | 09-04-2014 |
20140308786 | HIGH-INTEGRATION SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device includes a semiconductor substrate, an active region including a plurality of unit active regions and disposed over and spaced from the semiconductor substrate, a pair of word lines formed on a top surface and sides of the unit active region, a dummy word line disposed at a contact of the unit active regions and formed on top surfaces and sides of the unit active regions, a source region in the unit active region between the pair of word lines and electrically connected to the semiconductor substrate, drain regions formed in the unit active region between the pair of word lines and the dummy word line, and first storage layers formed on the drain regions and electrically connected to the drain regions. | 10-16-2014 |
Patent application number | Description | Published |
20090154923 | WAVELENGTH SELECTIVE SWITCH - Provided is a wavelength selective switch (WSS), and more particularly, a wavelength selective switch for electrically switching a wavelength without physical displacement. The wavelength selective switch includes an optical demultiplexer for dividing an input optical signal into signals having wavelengths corresponding to respective channels, selecting either the optical signal of each channel obtained by dividing the input optical signal or an optical signal input via an add port, and outputting the selected optical signal; and an optical multiplexer including an optical deflecting unit for individually deflecting the optical signals of the respective channels received from the optical demultiplexer according to supplied current or applied voltage, wherein the optical signal of each channel deflected by the optical deflecting unit is output to a specific output port. In the wavelength selective switch, current is supplied to the optical deflectors to switch the channels, resulting in higher reliability, smaller volume and higher switching speed than a conventional wavelength selective switch using mechanical displacement to switch channels. | 06-18-2009 |
20090154928 | WAVELENGTH DIVISION MULTIPLEXER/DEMULTIPLEXER HAVING FLAT WAVELENGTH RESPONSE - Provided is a wavelength division multiplexer/demultiplexer having a flat wavelength response. In the wavelength division multiplexer/demultiplexer, a modified taper-shaped optical waveguide is interposed between an input waveguide and a first slab waveguide, such that the distribution of an optical signal input to an Arrayed Waveguide Grating (AWG) has a sinc-function shape. Thus, a flat wavelength response can be obtained in an output waveguide. In addition, the modified taper-shaped optical waveguide interposed to obtain a flat wavelength response has a small size and a simple structure, and thus can be applied to a conventional wavelength division multiplexer/demultiplexer without a design change. | 06-18-2009 |
20100008670 | WAVELENGTH SELECTIVE SWITCH USING PLANAR LIGHTWAVE CIRCUIT TECHNOLOGY - Provided is a wavelength selective switch. The wavelength selective switch includes a first wavelength division multiplexer, an M number of optical switches, an (M+N−1) number of optical combiners, and a second wavelength division multiplexer. The first wavelength division multiplexer receives optical signals of an M number of wavelength channels to divide the received optical signals according to each channel, thereby outputting the divided optical signals. The M number of optical switches changes a path of on an optical signal outputted by an M number of wavelength channels from the first wavelength division multiplexer into one of an N number of output ports. The (M+N−1) number of optical combiners is respectively connected to the N number of output ports of the optical switches. The (M+N−1) number of optical combiners couple the N number of inputted optical signals to one output port. The second wavelength division multiplexer has an (M+N−1) number of input ports and an N number of output ports. The (M+N−1) number of output signals of the optical combiners is connected to the input ports, respectively, and the inputted signals are multiplexed to output the multiplexed signals from any of the N number of output ports. | 01-14-2010 |
20100142884 | OPTICAL COMMUNICATION DEVICE INCLUDING DIGITAL OPTICAL SWITCH - Provided is an optical communication device including an optical switch. The optical communication device a main core including an optical input part and a transmission output part and a reflection output part disposed on a side of the main core. An optical signal is outputted through the reflection output part or the transmission output part according to an operation of a heater. | 06-10-2010 |
20110085760 | OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME - Provided is an optical device. The optical device includes a substrate having a waveguide region and a mounting region, a planar lightwave circuit (PLC) waveguide including a lower-clad layer and an upper-clad layer on the waveguide region of the substrate and a platform core between the lower-clad layer and the upper-clad layer, a terrace defined by etching the lower-clad layer on the mounting region of the substrate, the terrace including an interlocking part, an optical active chip mounted on the mounting region of the substrate, the optical active chip including a chip core therein, and a chip alignment mark disposed on a mounting surface of the optical active chip. The optical active chip is aligned by interlocking between the interlocking part of the terrace and the chip alignment mark of the optical active chip and mounted on the mounting region. | 04-14-2011 |
20110116740 | OPTICAL COMMUNICATION DEVICE HAVING DIGITAL OPTICAL SWITCHES - Provided is an optical communication device including optical switches. The optical communication device a first multi-mode core disposed on a substrate, the first multi-mode core extending in a first direction and second multi-mode cores disposed on a substrate, the second multi-mode cores parallelly extending in a second direction non-parallel to the first direction to intersect the first multi-mode core. The heaters respectively intersect intersectional regions between the first and second multi-mode cores. | 05-19-2011 |
20110141393 | OPTICAL DEVICES - Provided is an optical device. The optical device includes an optical waveguide comprising a core surrounded by a cladding, a light source providing light to the optical waveguide, and an optics system disposed between the optical waveguide and the light source, the optics system focusing the light emitted from the light source into the core of the optical waveguide and a portion of the cladding adjacent to the core. | 06-16-2011 |
20110150388 | OPTICAL SWITCH USING MACH-ZEHNDER INTERFEROMETER AND OPTICAL SWITCH MATRIX HAVING THE SAME - Provided are an optical switch using a Mach-Zehnder interferometer and an optical switch matrix including the same. The optical switch includes a first coupler, an optical delay line, and a second coupler. The first coupler branches an optical signal transmitted to a first or second input waveguide into two optical signals. The optical delay line includes first and second arm waveguides of the same length transmitting the branched optical signal and a heater heating the first arm waveguide. The first and second arm waveguides have one of a full wavelength optical path difference and a half wavelength optical path difference according to whether the heater is turned on. The second coupler branches optical signals outputted from the optical delay line into two optical signals, respectively, and transmits the branched optical signals to the first or second output waveguide. | 06-23-2011 |
20120020614 | OPTICAL SWITCH DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are an optical switch device having a simple light path and capable of achieving high speed switching, and a method of manufacturing the optical switch device. The optical switch device comprises one or more first optical waveguides extending in a first direction, one or more second optical waveguides connected to the first optical waveguides in a second direction crossing the first direction, and one or more switching parts configured to control light transmitted in the first direction within the first optical waveguide connected with the second waveguide, to selectively reflect the light to the second waveguide extending in the second direction. | 01-26-2012 |
20120128290 | OPTICAL MODULES - Provided is an optical module. The optical module includes: an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth; a lens in the first trench of the optical bench; at least one semiconductor chip in the second trench of the optical bench; and a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches, wherein the optical bench is a metal optical bench or a silicon optical bench. | 05-24-2012 |
20120263413 | WAVEGUIDE TYPE HIGH DENSITY OPTICAL MATRIX SWITCHES - An optical matrix switch includes connection optical waveguides, a 2×2 optical switch including two straight optical waveguides which are parallel to each other, two crossing optical waveguides which connects the insides of the straight optical waveguides and mutually intersects in an X shape, and electrodes which are disposed on portions where the straight optical waveguide and the crossing optical waveguide are connected. The connection optical waveguides include a straight connection optical waveguide which connects one of the straight optical waveguides of one of the 2×2 optical switches in one column and a straight optical waveguide of a 2×2 optical switch in the same row of an adjacent column, and a crossing connection optical waveguide which connects the other of the straight optical waveguides with a straight optical waveguide of 2×2 optical switch in the other row of an adjacent column | 10-18-2012 |
20130121702 | TRANSMITTER OPTICAL MODULE - Disclosed is a transmitter optical module which includes a first package generating an optical signal; a second package bonded with the first package by using chip-to-chip bonding, having a silicon optical circuit platform structure, and amplifying the optical signal; and an optical waveguide forming a transmission path of the optical signal from the first package to the second package. | 05-16-2013 |
20130128331 | TRANSMITTER OPTICAL MODULE - Disclosed is a transmitter optical module which includes an electro-absorption modulated laser modulating a light into an optical signal through a high-frequency electrical signal; a first sub-mount transferring the high-frequency signal to the electro-absorption modulated laser; and a second sub-mount receiving the high-frequency signal from the electro-absorption modulated laser to terminate the electro-absorption modulated laser. A length of a first wire connecting the first sub-mount and the electro-absorption modulated laser is different from a length of a second wire connecting the second sub-mount and the electro-absorption modulated laser. | 05-23-2013 |
20130148975 | MULTICHANNEL TRANSMITTER OPTICAL MODULE - Provided is a multichannel transmitter optical module which includes a plurality of light source units configured to generate light, a plurality of an electro-absorption modulators (EAMs) configured to modulate the generated light to an optical signal through a radio frequency (RF) signal, a plurality of RF transmission lines configured to apply the RF signal to the EAMs, and a combiner configured to combine the modulated optical signal. The RF transmission lines are connected to the EAMs in a traveling wave (TW) electrode manner. The multichannel transmitter optical module has alleviated crosstalk and is compactly integrated to have a small size. | 06-13-2013 |
20130223793 | TOTAL REFLECTION TYPE OPTICAL SWITCH USING POLYMER INSERTION TYPE SILICA OPTICAL WAVEGUIDE AND MANUFACTURING METHOD THEREOF - The present invention relates to a total reflection type optical switch using polymer insertion type silica optical waveguides and a manufacturing method thereof. The total reflection type optical switch forms a trench in an intersecting point of the silica optical waveguides having two optic routes, and inserts a polymer into the trench. A total reflection type optical switch has a heater which heats the polymer. The polymer is made of thermo-optic material, and totally reflects an optical signal as a refraction index falls when heated by the heater. In addition, when not heated by the heater, the polymer transilluminates the optical signal. When the polymer is made of electric-optic material, the total reflection type optical switch may have upper and lower electrodes for applying an electric field in the polymer instead of the heater. In this case, the total reflection type optical switch is capable of high speed switching, and is not limited to usages of an optical switch, and may be used as a variable optical attenuator by adjusting the voltage and current being applied. According to the present invention, it is possible to use the difference of the refraction indexes of the silica optical waveguides and the polymer due to temperature changes to transilluminate or totally reflect an optical signal according to changes of the refraction index of the polymer, thereby improving loss characteristics of the optical signal. | 08-29-2013 |
20130243369 | OPTICAL SWITCH DEVICE AND METHODS OF MANUFACTURING THE SAME - The inventive concept provides optical switch devices and methods of manufacturing the same. The optical switch device may include a substrate including a first region and a second region, a first multi-mode optical waveguide disposed on the substrate of the first region, an electrode wire disposed on the substrate of the second region, a heater disposed on a top surface of the first multi-mode optical waveguide, and connection wires connecting the heater to the electrode wire. The first multi-mode optical waveguide may have incline sidewalls, and the connection wires may be disposed on the incline sidewalls of the first multi-mode optical waveguide. | 09-19-2013 |
20140147128 | STRUCTURE FOR CONNECTING ELECTRICAL TRACE LINES OF PRINTED CIRCUIT BOARDS AND OPTICAL TRANSCEIVER MODULE WITH THE SAME - Provided are structures for connecting trace lines of printed circuit boards and optical transceiver modules with the same. The module may include an optical transmitter/receiver part, a signal processing unit, a flexible PCB, and a rigid PCB. The flexible PCB may include a first signal line, and the rigid PCB may include a second signal line. The flexible PCB and the rigid PCB may be overlapped with each other. The first signal line and the second signal line may not be overlapped with each other and be electrically connected to each other by a junction soldering structure. It is possible to transmit high quality and high frequency signals through the first and second signal lines. | 05-29-2014 |
20140270633 | OPTICAL MODULES - Provided is an optical module. The optical module includes: an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth; a lens in the first trench of the optical bench; at least one semiconductor chip in the second trench of the optical bench; and a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches, wherein the optical bench is a metal optical bench or a silicon optical bench. | 09-18-2014 |
20140302623 | OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME - Provided is an optical device. The optical device includes a substrate having a waveguide region and a mounting region, a planar lightwave circuit (PLC) waveguide including a lower-clad layer d an upper-clad layer on the waveguide region of the substrate and a platform core between the lower-clad layer and the upper-clad layer, a terrace defined by etching the lower-clad layer on the mounting region of the substrate, the terrace including an interlocking part, an optical active chip mounted on the mounting region of the substrate, the optical active chip including a chip core therein, and a chip alignment mark disposed on a mounting surface of the optical active chip. The optical active chip is aligned by interlocking between the interlocking part of the terrace and the chip alignment mark of the optical active chip and mounted on the mounting region. | 10-09-2014 |
20140328595 | RADIO FREQUENCY OPTICAL MODULE AND OPTICAL TRANSMISSION APPARATUS INCLUDING THE SAME - Provided is a transistor outline (TO)-CAN type optical module and an optical transmission apparatus including the same. The optical module includes a stem, a thermo-electric cooler (TEC) on the stem, a first sub-mount on the TEC, an optical element on the first sub-mount, a plurality of electrode lead wirings inserted from an outside to an inside of the stem and disposed adjacent to the TEC and the optical element, a second sub-mount between the electrode lead wirings and the optical element, radio frequency (RF) transmission lines on the second sub-mount, a plurality of bonding wires connecting the RF transmission lines and the optical element, and the RF transmission lines and the electrode lead wirings, and an impedance matching unit disposed around the RF transmission lines and the electrode lead wirings, and controlling impedances of the RF transmission lines and the electrode lead wires. | 11-06-2014 |
20140376077 | WAVELENGTH SWEPT SOURCE APPARATUS AND OPERATING METHOD THEREOF - Provided are a wavelength swept source apparatus and a method for operating thereof. According to the provided apparatus and method, single mode light is generated, a basic optical comb including a plurality of light rays having identical frequency differences with adjacent light rays is generated by modulating the generated single mode light, and a plurality of optical combs, that includes same number of light rays as the plurality of light rays, has a different frequency band from that of the basic optical comb, and is distributed in a wider frequency band than that in which the basic optical comb is distributed, is generated by modulating the plurality of light rays. The plurality of light rays and light rays included in the plurality of optical combs are sequentially emitted according to frequencies of the plurality of light rays and the light rays included in the plurality of optical combs. | 12-25-2014 |